Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | TT Electronics plc |
包装说明 | HERMETIC SEALED, CERAMIC, SMD1, 3 PIN |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
外壳连接 | COLLECTOR |
最大集电极电流 (IC) | 8 A |
集电极-发射极最大电压 | 120 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 15 |
JEDEC-95代码 | TO-276AB |
JESD-30 代码 | R-CBCC-N3 |
元件数量 | 1 |
端子数量 | 3 |
最高工作温度 | 200 °C |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装形状 | RECTANGULAR |
封装形式 | CHIP CARRIER |
峰值回流温度(摄氏度) | NOT SPECIFIED |
极性/信道类型 | NPN |
认证状态 | Not Qualified |
表面贴装 | YES |
端子形式 | NO LEAD |
端子位置 | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 30 MHz |
BDS16XSMD | BDS16XSMD05 | BDS17XSMD05 | BDS17XSMD | BDS16X | BDS17X | |
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描述 | Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN | Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD05, 3 PIN | Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD05, 3 PIN | Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN | Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN | Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
包装说明 | HERMETIC SEALED, CERAMIC, SMD1, 3 PIN | HERMETIC SEALED, CERAMIC, SMD05, 3 PIN | HERMETIC SEALED, CERAMIC, SMD05, 3 PIN | HERMETIC SEALED, CERAMIC, SMD1, 3 PIN | HERMETIC SEALED, METAL, TO-220M, 3 PIN | HERMETIC SEALED, METAL, TO-220M, 3 PIN |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
外壳连接 | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | ISOLATED | ISOLATED |
最大集电极电流 (IC) | 8 A | 8 A | 8 A | 8 A | 8 A | 8 A |
集电极-发射极最大电压 | 120 V | 120 V | 150 V | 150 V | 120 V | 150 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 15 | 15 | 15 | 15 | 15 | 15 |
JEDEC-95代码 | TO-276AB | TO-276AA | TO-276AA | TO-276AB | TO-220AB | TO-220AB |
JESD-30 代码 | R-CBCC-N3 | R-CBCC-N3 | R-CBCC-N3 | R-CBCC-N3 | R-MSFM-T3 | R-MSFM-T3 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 |
最高工作温度 | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | METAL | METAL |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | FLANGE MOUNT | FLANGE MOUNT |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES | NO | NO |
端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | SINGLE | SINGLE |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 30 MHz | 30 MHz | 30 MHz | 30 MHz | 30 MHz | 30 MHz |
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