CAT64LC40
4K-Bit SPI Serial EEPROM
FEATURES
I
SPI bus compatible
I
Low power CMOS technology
I
2.5V to 6.0V operation
I
Self-timed write cycle with auto-clear
I
Hardware reset pin
I
Hardware and software write protection
I
Commercial, industrial and automotive
DESCRIPTION
The CAT64LC40 is a 4K-bit Serial EEPROM which is
configured as 256 registers by 16 bits. Each register can
be written (or read) serially by using the DI (or DO) pin.
The CAT64LC40 is manufactured using Catalyst’s
advanced CMOS EEPROM floating gate technology. It
is designed to endure 1,000,000 program/erase cycles
and has a data retention of 100 years. The device is
available in 8-pin DIP, SOIC and TSSOP packages.
temperature ranges
I
Power-up inadvertant write protection
I
RDY/BSY pin for end-of-write indication
BSY
I
1,000,000 program/erase cycles
I
100 year data retention
PIN CONFIGURATION
DIP Package (P, L)
CS
SK
DI
DO
1
2
3
4
8
7
6
5
VCC
RDY/BUSY
RESET
GND
SOIC Package (J, W)
RDY/BUSY
VCC
CS
SK
1
2
3
4
8
7
6
5
RESET
GND
DO
DI
TSSOP Package (U, Y)
CS
SK
DI
DO
1
2
3
4
8
7
6
5
VCC
RDY/BUSY
RESET
GND
SOIC Package (S, V)
CS
SK
DI
DO
1
2
3
4
8
7
6
5
VCC
RDY/BUSY
RESET
GND
TSSOP Package (UR, YR)
RDY/BUSY
VCC
CS
SK
1
2
3
4
8
7
6
5
RESET
GND
DO
DI
PIN FUNCTIONS
Pin Name
CS
SK
DI
DO
V
CC
GND
RESET
RDY/BUSY
Function
Chip Select
Clock Input
Serial Data Input
Serial Data Output
+2.5V to +6.0V Power Supply
Ground
Reset
Ready/BUSY Status
BLOCK DIAGRAM
VCC
GND
MEMORY ARRAY
256 x 16
ADDRESS
DECODER
DATA
REGISTER
DI
RESET
CS
MODE DECODE
LOGIC
OUTPUT
BUFFER
SK
CLOCK
GENERATOR
DO
RDY/BUSY
© 2004 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
Doc. No. 1021, Rev. C
CAT64LC40
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. –55°C to +125°C
Storage Temperature ....................... –65°C to +150°C
Voltage on any Pin with
Respect to Ground
(1)
............ –2.0V to +V
CC
+2.0V
V
CC
with Respect to Ground ............... –2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25°C) ................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current
(2)
........................ 100 mA
RELIABILITY CHARACTERISTICS
Symbol
N
END(3)
T
DR(3)
V
ZAP(3)
I
LTH(3)(4)
Parameter
Endurance
Data Retention
ESD Susceptibility
Latch-Up
Min.
1,000,000
100
2000
100
Max.
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of
the device at these or any other conditions outside of those
listed in the operational sections of this specification is not
implied. Exposure to any absolute maximum rating for
extended periods may affect device performance and
reliability.
Units
Cycles/Byte
Years
Volts
mA
CAPACITANCE
(T
A
= 25°C, f= 1.0 MHz, V
CC
=6.0V)
Symbol
C
I/O(3)
C
IN(3)
Test
Input/Output Capacitance (DO, RDY/BSY)
Input Capacitance (CS, SK, DI, RESET)
Max.
8
6
Conditions
V
I/O
= 0V
V
IN
= 0V
Units
pF
pF
Note:
(1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is V
CC
+0.5V, which may overshoot to V
CC
+2.0V for periods of less than 20 ns.
(2) Output shorted for no more than one second. No more than one output shorted at a time.
(3) This parameter is tested initially and after a design or process change that affects the parameter.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to V
CC
+1V.
Doc. No. 1021, Rev. A
2
© 2006 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
CAT64LC40
D.C. OPERATING CHARACTERISTICS
V
CC
= +2.5V to +6.0V, unless otherwise specified.
Limits
Sym.
I
CC
Parameter
Operating Current
2.5V
Min.
Typ.
Max.
0.4
1
2
3
3
2
10
–0.1
V
CC
x 0.7
–0.1
V
CC
x 0.8
2.5V
6.0V
V
CC
– 0.3
V
CC
– 0.3
2.4
V
OL(1)
Low Level Output Voltage
2.5V
6.0V
0.4
0.4
V
CC
x 0.3
V
CC
+ 0.5
V
CC
x 0.2
V
CC
+ 0.5
I
OH
= –10µA
I
OH
= –10µA
I
OH
= –400µA
I
OL
= 10µA
I
OL
= 2.1mA
V
IN
= GND or V
CC
CS
= V
CC
V
IN
= GND to V
CC
V
OUT
= GND to V
Cc
Test Conditions
f
SK
= 250 kHz
f
SK
= 1 MHz
Units
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
V
V
V
V
V
EWEN, EWDS, READ 6.0V
I
CCP
Program Current
2.5V
6.0V
I
SB(1)
I
LI
I
LO
V
IL
V
IH
V
IL
V
IH
Standby Current
Input Leakage Current
Output Leakage Current
Low Level Input Voltage, DI
High Level Input Voltage, DI
Low Level Input Voltage,
CS,
SK, RESET
High Level Input Voltage,
CS,
SK, RESET
V
OH(1)
High Level Output Voltage
Note:
(1) V
OH
and V
OL
spec applies to READY/BUSY pin also
© 2006 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
3
Doc. No. 1021, Rev. A
CAT64LC40
A.C. OPERATING CHARACTERISTICS
V
CC
= +2.5V to +6.0V, unless otherwise specified.
Limits
Symbol
t
CSS
t
CSH
t
DIS
t
DIH
t
PD1
t
PD0
t
HZ(2)
t
CSMIN
t
SKHI
Parameter
CS
Setup Time
CS
Hold Time
DI Setup Time
DI Hold Time
Output Delay to 1
Output Delay to 0
Output Delay to High Impendance
Minimum
CS
High Time
Minimum SK High Time
2.5V
4.5V–6.0V
t
SKLOW
Minimum SK Low Time
2.5V
4.5V–6.0V
t
SV
f
SK
Output Delay to Status Valid
Maximum Clock Frequency
Reset to
CS
Setup Time
Minimum RESET High Time
RESET to READY Hold Time
Write Recovery
2.5V
4.5V–6.0V
t
RESS
t
RESMIN
t
RESH
t
RC
250
1000
0
250
0
100
ns
ns
ns
ns
250
1000
400
1000
400
500
ns
kHz
ns
Min.
100
100
200
200
300
300
500
Typ.
Max.
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
POWER-UP TIMING
(1)(3)
Symbol
t
PUR
t
PUW
Parameter
Power-Up to Read Operation
Power-Up to Program Operation
Min.
Max.
10
1
Units
µs
ms
WRITE CYCLE LIMIITS
Symbol
t
WR
Parameter
Program Cycle Time
2.5V
4.5V–6.0V
Min.
Max.
10
5
Units
ms
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) This parameter is sampled but not 100% tested.
(3) t
PUR
and t
PUW
are the delays required from the time V
CC
is stable until the specified operation can be initiated.
Doc. No. 1021, Rev. A
4
© 2006 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
CAT64LC40
INSTRUCTION SET
Instruction
Read
Write
Write Enable
Write Disable
[Write All Locations]
(1)
Opcode
10101000
10100100
10100011
10100000
10100001
Address
A7 A6 A5 A4 A3 A2 A1 A0
A7 A6 A5 A4 A3 A2 A1 A0
XXXXXXXX
XXXXXXXX
XXXXXXXX
D15–D0
Data
D15 - D0
D15 - D0
Figure 1. A.C. Testing Input/Output Waveform
(2)(3)(4)
(C
L
= 100 pF)
VCC x 0.8
INPUT PULSE LEVELS
VCC x 0.2
VCC x 0.3
VCC x 0.7
REFERENCE POINTS
Note:
(1) (Write All Locations) is a test mode operation and is therefore not included in the A.C./D.C. Operations specifications.
(2) Input Rise and Fall Times (10% to 90%) < 10 ns.
(3) Input Pulse Levels = V
CC
x 0.2 and V
CC
x 0.8.
(4) Input and Output Timing Reference = V
CC
x 0.3 and V
CC
x 0.7.
© 2006 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
5
Doc. No. 1021, Rev. A
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