DATA SHEET
MOS
INTEGRATED
CIRCUIT
µ
PD166100, 166101
N-CHANNEL LOW SIDE INTELLIGENT POWER DEVICE
The
µ
PD166100, 166101 are N-channel Low-side Driver for Solenoids and Lamp Drivers. It build in protection functions.
FEATURES
Built in current limit and thermal shutdown circuit.
Thermal shutdown will automatically restart after
the channel temperature has cool down.
Low on-state resistance: R
DS(ON)
= 160 mΩ
(V
IN
= 5 V, I
OUT
= 0.8 A, T
ch
= 25°C)
PACKAGE DRAWING (unit: mm)
8
5
1
4
5.37 Max.
+0.10
–0.05
6.0 ±0.3
4.4
0.8
1.8 Max.
0.05 Min.
Small and surface mount package
(8-pin SOP)
0.15
µ
PD166101: Dual channel Low-side switch
1.44
Built in dynamic clamp circuit
0.5 ±0.2
0.10
1.27
0.40
0.78 Max.
0.12 M
+0.10
–0.05
ORDERING INFORMATION
Part Number
Package
8-pin SOP
8-pin SOP
µ
PD166100GR(20)
µ
PD166101GR(20)
BLOCK DIAGRAM
IN1
Dynamic
Clamp
OUT1
Control
Circuit
ESD
Over
Temperature
Protection
Circuit
Current
Limit
Ch1
IN2
Dynamic
Clamp
GND1
OUT2
Control
Circuit
ESD
Over
Temperature
Protection
Circuit
Current
Limit
Ch2
GND2
Remark
µ
PD166100: Ch1 only
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. S17476EJ1V0DS00 (1st edition)
Date Published March 2005 NS CP (K)
Printed in Japan
2005
µ
PD166100, 166101
PIN CONFIGURATION (Top View)
•
8-pin SOP
µ
PD166100GR (20),
µ
PD166101GR (20)
GND1
IN1
1
2
8 OUT1
7 OUT1
6 OUT2
Note
GND2
Note
3
IN2
Note
4
Note
5 OUT2
Pin No.
1
2
3
4
5
6
7
8
Symbol
GND1
IN1
GND2
IN2
Note
Function
Connected to Ground
Input terminal1 (active level is high)
Connected to Ground
Input terminal2 (active level is high)
Output terminal2
Output terminal2
Output terminal1
Output terminal1
Note
OUT2
OUT2
OUT1
OUT1
Note
Note
Note
µ
PD166100:
Pin No.3 to 6 are N.C.
2
Data Sheet
S17476EJ1V0DS
µ
PD166100, 166101
ABSOLUTE MAXIMUM RATING (T
A
= 25°C unless otherwise specified)
Parameter
Output voltage
Input voltage
Negative input current
Output current
Total power dissipation
Symbol
V
OUT
V
IN
I
IL
I
OUT(DC)
P
D
Note
Conditions
V
IN
= 0 V, DC
Rating
40
7
−10
Unit
V
V
mA
A/UNIT
W
V
IN
= 5 V
SELF LIMITED
On-State
2ch On-State
1.5
2
150
−55
to
+150
µ
PD166100
µ
PD166101
Channel temperature
Storage temperature
T
ch
T
stg
°C
°C
Note
Mounted on ceramic substrate of 20cm x 20cm x 1.1mm
ELECTRICAL CHARACTERISTICS
(T
ch
= 25
°C
unless otherwise specified)
Parameter
Output clamping voltage
Output Off leakage current
High Level Input current
Low Level Input current
High Level Input voltage
Low Level Input voltage
ON-state resistance
Symbol
V
OUT
I
OL
I
IH
I
IL
V
IH
V
IL
R
DS(ON)
Conditions
I
OUT
= 1 mA, V
IN
= 0 V
V
IN
= V
IL
, V
OUT
= 18 V
V
IN
= 5.5 V, V
OUT
= 0 V
V
IN
= 0 V, V
OUT
= 18 V
I
OUT
= 0.8 A, V
OUT
= 0.2 V
V
OUT
= 10 V, I
OUT
= 1 mA
V
IN
= 5 V, I
OUT
= 0.8 A
V
IN
= 3 V, I
OUT
= 0.8 A
Turn-on time
Rise time
Turn-off time
Fall time
Thermal shutdown
detection temperature
Current limit
Input frequency
Note
Min.
40
Typ.
Max.
60
100
300
Unit
V
µ
A
µ
A
µ
A
V
−10
3
10
1.5
160
195
120
80
200
80
V
mΩ
mΩ
t
on
t
r
t
off
t
f
T
HI
V
CC
= 18 V, R
L
= 22
Ω,
V
IN
= 0 V to 5 V,
R
IN
= 10
Ω
µ
s
µ
s
µ
s
µ
s
°C
V
IN
= 5 V
150
I
S
f
IN
V
IN
= 3 V
1
1
A
kHz
Note
The low side switch is shutdown if the channel temperature exceeds thermal shutdown temperature.
It will automatically restart after the channel temperature has cooled down than thermal shutdown temperature.
TEST CIRCUIT
50%
50%
µ
PD 166100,
µ
PD 166101
V
CC
= 18 V
IN
Wave Form
t
on
t
off
t
r
t
f
90%
10%
10%
V
IN
IN
GND
OUT
R
L
= 22
Ω
OUT
Wave Form
90%
Data Sheet
S17476EJ1V0DS
3
µ
PD166100, 166101
TYPICAL CHARACTERISTICS
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
- Total Power Dissipation –W / package
2.4
2
2 unit
Mounted on ceramic
substrate of
2
2000 mm x 2.25 mm
OUTPUT OFF LEAKAGE CURRENT vs.
AMBIENT TEMPERATURE
I
OL
- Output Off Leakage Current -
µ
A
100
90
80
70
60
50
40
30
20
10
0
-50
0
50
100
150
200
V
IN
= V
IL
, V
OUT
= 18 V
2.8
1.6
1 unit
1.2
0.8
0.4
0
0
20
40
60
80
100
1
20
140
160
T
A
- Ambient Temperature -
°C
T
A
- Ambient Temperature -
°C
HIGH LEVEL INPUT CURRENT vs.
INPUT VOLTAGE
600
400
V
OUT
= 0 V
HIGH LEVEL INPUT CURRENT vs.
AMBIENT TEMPERATURE
I
IH
- High Level Input Current -
µ
A
V
IN
= 5.5 V, V
OUT
= 0 V
I
IH
- High Level Input Current -
µ
A
500
400
300
200
T
A
= 105°C
350
300
250
200
150
100
50
0
100
0
0
1
T
A
= 85°C
T
A
= 25°C
T
A
=
−40°C
2
V
IN
- Input Voltage - V
3
4
5
6
7
8
-50
T
A
- Ambient Temperature -
°C
0
50
100
150
200
HIGH LEVEL INPUT VOLTAGE vs.
AMBIENT TEMPERATURE
4.0
3.0
LOW LEVEL INPUT VOLTAGE vs.
AMBIENT TEMPERATURE
V
IL
- Low Level Input Voltage - V
I
OUT
= 1 mA
V
IH
- High Level Input Voltage - V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
I
OUT
= 0.8 A
2.5
2.0
1.5
1.0
0.5
0.0
150
200
-50
0
50
100
150
200
T
A
- Ambient Temperature -
°C
T
A
- Ambient Temperature -
°C
4
Data Sheet
S17476EJ1V0DS
µ
PD166100, 166101
ON-STATE RESISTANCE vs.
OUTPUT CURRENT
0.25
0.25
ON-STATE RESISTANCE vs.
AMBIENT TEMPERATURE
R
DS(ON)
- ON-State Resistance -
Ω
V
IN
= 3 V, 5 V, I
OUT
= 0.8 A
R
DS(ON)
- ON-State Resistance -
Ω
V
IN
= 3 V, 5 V, T
A
= 25°C
0.2
0.2
0.15
V
IN
= 3 V
0.15
V
IN
= 3 V
0.1
0.1
0.05
V
IN
= 5 V
0.05
V
IN
= 5 V
0
0
0.1 0.2
0.3
0.4
0.5 0.6
0.7 0.8
0.9
1
0
-50
0
50
100
150
200
I
OUT
- Output Current - A
T
A
- Ambient Temperature -
°C
ON-STATE RESISTANCE vs.
INPUT VOLTAGE
0.25
R
DS(ON)
- ON-State Resistance -
Ω
I
OUT
= 0.8 A
0.2
0.15
T
A
= 105°C
T
A
= 85°C
0.1
T
A
= 25°C
T
A
=
−40°C
0.05
0
0
1
2
3
4
5
6
7
8
V
IN
- Input Voltage - V
Data Sheet
S17476EJ1V0DS
5
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