RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED PACKAGE-2
参数名称 | 属性值 |
厂商名称 | Microwave_Technology_Inc. |
包装说明 | FLANGE MOUNT, R-CDFM-F2 |
针数 | 2 |
Reach Compliance Code | unknown |
其他特性 | LOW NOISE |
配置 | SINGLE |
FET 技术 | METAL SEMICONDUCTOR |
最大反馈电容 (Crss) | 0.1 pF |
最高频带 | KU BAND |
JESD-30 代码 | R-CDFM-F2 |
元件数量 | 1 |
端子数量 | 2 |
工作模式 | DEPLETION MODE |
最高工作温度 | 175 °C |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
极性/信道类型 | N-CHANNEL |
最小功率增益 (Gp) | 8.5 dB |
认证状态 | Not Qualified |
表面贴装 | YES |
端子形式 | FLAT |
端子位置 | DUAL |
晶体管元件材料 | GALLIUM ARSENIDE |
MWT-A971LN | MWT-A970LN | MWT-A973LN | MWT-A9LN | |
---|---|---|---|---|
描述 | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED PACKAGE-2 | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED PACKAGE-4 | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, NULL | TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, FET RF Small Signal |
包装说明 | FLANGE MOUNT, R-CDFM-F2 | MICROWAVE, S-CQMW-F4 | DISK BUTTON, O-PRDB-F4 | UNCASED CHIP, R-XUUC-N4 |
Reach Compliance Code | unknown | unknown | unknown | unknown |
其他特性 | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
配置 | SINGLE | SINGLE | SINGLE | SINGLE |
FET 技术 | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR |
最大反馈电容 (Crss) | 0.1 pF | 0.1 pF | 0.1 pF | 0.1 pF |
最高频带 | KU BAND | KU BAND | KU BAND | KU BAND |
JESD-30 代码 | R-CDFM-F2 | S-CQMW-F4 | O-PRDB-F4 | R-XUUC-N4 |
元件数量 | 1 | 1 | 1 | 1 |
端子数量 | 2 | 4 | 4 | 4 |
工作模式 | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | UNSPECIFIED |
封装形状 | RECTANGULAR | SQUARE | ROUND | RECTANGULAR |
封装形式 | FLANGE MOUNT | MICROWAVE | DISK BUTTON | UNCASED CHIP |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最小功率增益 (Gp) | 8.5 dB | 8.5 dB | 8.5 dB | 8.5 dB |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES |
端子形式 | FLAT | FLAT | FLAT | NO LEAD |
端子位置 | DUAL | QUAD | RADIAL | UPPER |
晶体管元件材料 | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE |
厂商名称 | Microwave_Technology_Inc. | - | Microwave_Technology_Inc. | Microwave_Technology_Inc. |
最高工作温度 | 175 °C | 175 °C | 175 °C | - |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved