RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEADLESS MINIMOLD PACKAGE-6
参数名称 | 属性值 |
是否无铅 | 不含铅 |
是否Rohs认证 | 符合 |
厂商名称 | NEC(日电) |
Objectid | 1814797275 |
包装说明 | SMALL OUTLINE, R-PDSO-F6 |
针数 | 6 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
compound_id | 5446807 |
最大集电极电流 (IC) | 0.1 A |
基于收集器的最大容量 | 0.8 pF |
集电极-发射极最大电压 | 5.5 V |
配置 | SEPARATE, 2 ELEMENTS |
最高频带 | L BAND |
JESD-30 代码 | R-PDSO-F6 |
JESD-609代码 | e6 |
元件数量 | 2 |
端子数量 | 6 |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
峰值回流温度(摄氏度) | NOT SPECIFIED |
极性/信道类型 | NPN |
认证状态 | Not Qualified |
表面贴装 | YES |
端子面层 | TIN BISMUTH |
端子形式 | FLAT |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 6500 MHz |
UPA895TS-FB-A | UPA895TS-T3FB-A | UPA895TS-T3FB | UPA895TS | UPA895TS-T3 | UPA895TS-FB | |
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描述 | RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEADLESS MINIMOLD PACKAGE-6 | RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEADLESS MINIMOLD PACKAGE-6 | RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEADLESS MINIMOLD PACKAGE-6 | RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEADLESS MINIMOLD PACKAGE-6 | RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEADLESS MINIMOLD PACKAGE-6 | RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEADLESS MINIMOLD PACKAGE-6 |
包装说明 | SMALL OUTLINE, R-PDSO-F6 | SUPER LEADLESS MINIMOLD PACKAGE-6 | SMALL OUTLINE, R-PDSO-F6 | SMALL OUTLINE, R-PDSO-F6 | SUPER LEADLESS MINIMOLD PACKAGE-6 | SUPER LEADLESS MINIMOLD PACKAGE-6 |
Reach Compliance Code | compliant | compliant | compliant | compliant | unknown | compliant |
最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
基于收集器的最大容量 | 0.8 pF | 0.8 pF | 0.8 pF | 0.8 pF | 0.8 pF | 0.8 pF |
集电极-发射极最大电压 | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
配置 | SEPARATE, 2 ELEMENTS | SEPARATE, 2 ELEMENTS | SEPARATE, 2 ELEMENTS | SEPARATE, 2 ELEMENTS | SEPARATE, 2 ELEMENTS | SEPARATE, 2 ELEMENTS |
最高频带 | L BAND | L BAND | L BAND | L BAND | L BAND | L BAND |
JESD-30 代码 | R-PDSO-F6 | R-PDSO-F6 | R-PDSO-F6 | R-PDSO-F6 | R-PDSO-F6 | R-PDSO-F6 |
元件数量 | 2 | 2 | 2 | 2 | 2 | 2 |
端子数量 | 6 | 6 | 6 | 6 | 6 | 6 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES | YES | YES |
端子形式 | FLAT | FLAT | FLAT | FLAT | FLAT | FLAT |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 6500 MHz | 6500 MHz | 6500 MHz | 6500 MHz | 6500 MHz | 6500 MHz |
是否Rohs认证 | 符合 | 符合 | 不符合 | 不符合 | - | 不符合 |
JESD-609代码 | e6 | e6 | e0 | e0 | - | e0 |
峰值回流温度(摄氏度) | NOT SPECIFIED | 260 | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED |
端子面层 | TIN BISMUTH | TIN BISMUTH | TIN LEAD | TIN LEAD | - | TIN LEAD |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | 10 | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | - | - | AMPLIFIER |
Base Number Matches | - | 1 | 1 | 1 | 1 | - |
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