Advance Technical Data
HiPerFAST
TM
IGBT
ISOPLUS247
TM
B2-Class
High Speed IGBTs
IXGR 60N60B2
IXGR 60N60B2D1
(Electrically Isolated Back Surface)
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 600 V
= 75 A
= 2.0 V
= 100 ns
D1
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
V
ISOL
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, t = 1m
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C (limited by leads)
T
C
= 110°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 10
Ω
Clamped inductive load @ V
CE
≤
600 V
T
C
= 25°C
250
-55 ... +150
150
-55 ... +150
2500
5
300
W
°C
°C
°C
V
g
°C
Applications
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
Easy assembly
High power density
Very fast switching speeds for high
frequency applications
Maximum Ratings
600
600
±20
±30
75
47
300
I
CM
= 150
V
V
V
V
A
A
A
A
Features
DCB Isolated mounting tab
Meets TO-247AD package Outline
High current handling capability
Latest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
G = Gate
E = Emitter
C
E
(ISOLATED TAB)
PLUS247(IXGR)
E153432
C = Collector
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
3.0
T
J
= 125°C
5.0
300
5
±100
2.0
V
µA
mA
nA
V
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250
µA,
V
CE
= V
GE
V
CE
= V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= 50 A, V
GE
= 15 V
Note 1
© 2004 IXYS All rights reserved
DS99161(04/04)
IXGR 60N60B2
IXGR 60N60B2D1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
40
58
3900
340
100
170
25
57
28
Inductive load, T
J
= 25°C
°
I
C
= 50 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= R
off
= 3.3
Ω
30
160 270
100 170
1.0
28
36
1.5
310
240
2.8
0.15
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ISOPLUS 247 Outline
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= 50 A; V
CE
= 10 V,
Note 1
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
I
C
= 50 A, V
GE
= 15 V, V
CE
= 0.5 V
CES
2.5 mJ
ns
ns
mJ
ns
ns
mJ
0.5 K/W
K/W
Inductive load, T
J
= 125°C
°
I
C
= 50 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= R
off
= 2.0
Ω
Reverse Diode (FRED)
Symbol
V
F
I
RM
t
rr
R
thJC
Test Conditions
I
F
= 60 A, V
GE
= 0 V,
Note 1
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
2.1
1.4
8.3
35
V
V
A
ns
0.85 K/W
T
J
= 150°C
I
F
= 60 A, V
GE
= 0 V, -di
F
/dt = 100 A/µ T
J
= 100°C
V
R
= 100 V
I
F
= 1 A; -di/dt = 200 A/ms; V
R
= 30 V
Note 1: Pulse test, t
≤
300
µs,
duty cycle
≤
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXGR 60N60B2
IXGR 60N60B2D1
Fig. 1. Output Characteristics
@ 25 Deg. C
100
90
80
70
V
GE
= 15V
13V
11V
9V
300
250
7V
350
V
GE
= 15V
13V
11V
Fig. 2. Extended Output Characteristics
@ 25 deg. C
I
C
- Amperes
60
50
40
30
20
10
0
0.5
1
1.5
2
I
C
- Amperes
9V
200
150
7V
100
50
5V
0
5V
2.5
3
0
1
2
3
V
C E
- Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
100
90
80
V
GE
= 15V
13V
11V
9V
1.3
1.4
V
C E
- Volts
4
5
6
7
8
Fig. 4. Dependence of V
CE(sat)
on
Tem perature
V
GE
= 15V
I
C
= 100A
V
C E (sat)
- Normalized
1.2
1.1
1.0
0.9
0.8
0.7
0.6
I
C
- Amperes
70
60
50
40
30
20
10
0
0.5
1
1.5
2
7V
I
C
= 50A
5V
I
C
= 25A
2.5
3
-50
-25
0
25
50
75
100
125
150
V
CE
- Volts
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
3.7
3.4
3.1
T
J
= 25ºC
250
300
T
J
- Degrees Centigrade
Fig. 6. Input Adm ittance
V
C E
- Volts
2.8
2.5
2.2
1.9
I
C
- Amperes
I
C
= 100A
50A
25A
200
150
100
T
J
= 125ºC
-40ºC
T
J
= 25ºC
50
1.6
1.3
5
6
7
8
9
10
11
12
13
14
15
16
17
0
4
5
6
7
8
9
10
V
G E
- Volts
V
G E
- Volts
© 2004 IXYS All rights reserved
IXGR 60N60B2
IXGR 60N60B2D1
Fig. 7. Transconductance
100
90
80
T
J
= -40ºC
25ºC
125ºC
10
9
8
T
J
= 125ºC
V
GE
= 15V
V
CE
= 400V
I
C
= 100A
Fig. 8. Dependence of Turn-Off
Energy on R
G
E
off
- milliJoules
g
f s
- Siemens
70
60
50
40
30
20
10
0
0
7
6
5
4
3
2
1
I
C
= 50A
I
C
= 25A
50
100
150
200
250
300
0
5
10
15
20
25
30
35
40
45
50
I
C
- Amperes
Fig. 9. Dependence of Turn-Off
Energy on I
c
7
6
R
G
= 3.3Ω
V
GE
= 15V
V
CE
= 400V
7
6
5
4
3
2
1
R
G
= 3.3Ω
V
GE
= 15V
V
CE
= 400V
R
G
- Ohms
Fig. 10. Dependence of Turn-Off
Energy on Tem perature
E
off
- MilliJoules
4
3
2
1
0
20
30
T
J
= 125ºC
E
off
- milliJoules
5
I
C
= 100A
I
C
= 50A
T
J
= 25ºC
I
C
= 25A
0
40
50
60
70
80
90
100
25
35
45
55
65
75
85
95
105 115 125
I
C
- Amperes
Fig. 11. Dependence of Turn-Off
Sw itching Tim e on R
G
1200
1100
400
T
J
- Degrees Centigrade
Fig. 12. Dependence of Turn-Off
Sw itching Tim e on I
c
t
d(off)
t
fi
- - - - - -
R
G
= 3.3Ω
V
GE
= 15V
V
CE
= 400V
T
J
= 125ºC
Switching Time - nanosecond
1000
900
800
700
600
T
J
= 125ºC
V
GE
= 15V
V
CE
= 400V
Switching Time - nanosecond
t
d(off)
t
fi
-
- - - - -
350
300
250
200
150
T
J
= 25ºC
100
50
I
C
= 25A
500
400
300
200
0
5
10
15
20
25
30
35
40
45
50
I
C
= 100A
I
C
= 50A
20
30
40
50
60
70
80
90
100
R
G
- Ohms
IXYS reserves the right to change limits, test conditions, and dimensions.
I
C
- Amperes
IXGR 60N60B2
IXGR 60N60B2D1
Fig. 13. Dependence of Turn-Off
Sw itching Tim e on Tem perature
350
15
Fig. 14. Gate Charge
t
d(off)
Switching Time - nanosecond
300
V
CE
= 300V
I
C
= 25A
50A
100A
12
I
C
= 50A
I
G
= 10mA
t
fi
-
- - - - -
R
G
= 3.3Ω
V
GE
= 15V
V
CE
= 400V
250
200
V
GE
- Volts
I
C
= 100A
50A
25A
9
6
150
100
3
50
25
35
45
55
65
75
85
95
105 115 125
0
0
20
40
60
80
100
120
140
160
180
T
J
- Degrees Centigrade
Q
G
- nanoCoulombs
Fig. 15. Capacitance
10000
f = 1 MHz
C
ies
1000
C
oes
Capacitance - pF
100
C
res
10
0
5
10
15
20
25
30
35
40
V
CE
- Volts
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is t an ce
0.55
0.5
0.45
R
( t h ) J C
- ºC / W
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
1
10
100
1000
Puls e W idth - millis ec onds
© 2004 IXYS All rights reserved
GD32 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
