NX3020NAKW
29 October 2013
SO
T3
23
30 V, 180 mA N-channel Trench MOSFET
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
•
•
•
•
Very fast switching
Trench MOSFET technology
ESD protection
Low threshold voltage
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; I
D
= 100 mA; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
Typ
-
-
-
Max
30
20
180
Unit
V
V
mA
Static characteristics
drain-source on-state
resistance
[1]
-
2.7
4.5
Ω
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
2
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NXP Semiconductors
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
5. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G
S
D
gate
source
drain
1
2
Simplified outline
3
Graphic symbol
D
G
SC-70 (SOT323)
S
017aaa255
6. Ordering information
Table 3.
Ordering information
Package
Name
NX3020NAKW
SC-70
Description
plastic surface-mounted package; 3 leads
Version
SOT323
Type number
7. Marking
Table 4.
Marking codes
Marking code
[1]
Type number
NX3020NAKW
[1]
%3A
% = placeholder for manufacturing site code
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; T
amb
= 100 °C
I
DM
P
tot
peak drain current
total power dissipation
T
amb
= 25 °C; single pulse; t
p
≤ 10 µs
T
amb
= 25 °C
[2]
[1]
NX3020NAKW
All information provided in this document is subject to legal disclaimers.
Conditions
T
j
= 25 °C
Min
-
-20
[1]
[1]
Max
30
20
180
110
720
260
300
Unit
V
V
mA
mA
mA
mW
mW
-
-
-
-
-
© NXP N.V. 2013. All rights reserved
Product data sheet
29 October 2013
2 / 15
NXP Semiconductors
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
Symbol
T
j
T
amb
T
stg
I
S
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
T
sp
= 25 °C
Min
-
-55
-55
-65
Max
1100
150
150
150
Unit
mW
°C
°C
°C
Source-drain diode
source current
[1]
[2]
T
amb
= 25 °C
[1]
-
180
2
mA
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
017aaa001
120
P
der
(%)
80
120
I
der
(%)
80
017aaa002
40
40
0
- 75
- 25
25
75
125
175
T
amb
(°C)
0
- 75
- 25
25
75
125
175
T
amb
(°C)
Fig. 1.
Normalized total power dissipation as a
function of ambient temperature
Fig. 2.
Normalized continuous drain current as a
function of ambient temperature
NX3020NAKW
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© NXP N.V. 2013. All rights reserved
Product data sheet
29 October 2013
3 / 15
NXP Semiconductors
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
1
I
D
(A)
10
-1
Limit R
DSon
= V
DS
/I
D
t
p
= 100 µs
t
p
= 1 ms
t
p
= 10 ms
t
p
= 100 ms
10
-2
DC; T
sp
= 25 °C
DC; T
amb
= 25 °C;
drain mounting pad 1 cm
2
10
-3
10
-1
017aaa682
1
10
V
DS
(V)
10
2
I
DM
= single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
[1]
[2]
Conditions
in free air
[1]
[2]
Min
-
-
-
Typ
415
350
-
Max
480
400
110
Unit
K/W
K/W
K/W
R
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
2
NX3020NAKW
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
29 October 2013
4 / 15
NXP Semiconductors
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
10
3
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.5
0.33
10
2
0.2
0.25
0.1
017aaa683
0.05
0.02
0
10
10
-3
0.01
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
3
017aaa684
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
0.2
10
2
0.25
0.1
0.05
0.02
0
10
10
-3
0.01
10
-2
10
-1
2
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for drain 1 cm
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7.
Symbol
V
(BR)DSS
V
GSth
I
DSS
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
Conditions
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
DS
= V
GS
; T
j
= 25 °C
V
DS
= 30 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 30 V; V
GS
= 0 V; T
j
= 150 °C
NX3020NAKW
All information provided in this document is subject to legal disclaimers.
Min
30
0.8
-
-
Typ
-
1.2
-
-
Max
-
1.5
1
10
Unit
V
V
µA
µA
5 / 15
Static characteristics
© NXP N.V. 2013. All rights reserved
Product data sheet
29 October 2013
stm32/stm8
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