DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
SS8550LT1
FEATURES
Power dissipation
P
CM
:
Collector current
I
CM
:
Collector-base voltage
V
(BR)CBO
:
T
J
, T
stg:
TRANSISTOR(PNP)
0.3
-1.5
W(Tamb=25℃)
A
V
-40
Operating and storage junction temperature range
-55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
H
FE
(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
fT
100
50
-0.5
-1.2
V
V
MH
Z
V
CE
=-1V, I
C
=-800mA
I
C
=-800 mA, I
B
= -80mA
I
C
=-800 mA, I
B
= -80mA
V
CE
=-10V, I
C
= -50mA
f=30MHz
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
H
FE
(1)
120
MIN TYP MAX UNIT
-40
-25
-5
-0.1
-0.1
-0.1
350
V
V
µ
A
µ
A
µ
A
Test conditions
Ic= -100µ I
E
=0
A,
Ic= -0.1mA, I
B
=0
IE=-100µA,IC=0
V
CB
=-40 V, I
E
=0
V
CE
=-20V, I
B
=0
V
EB
= -5V, I
C
=0
V
CE
=-1V, I
C
= -100mA
CLASSIFICATION OF hFE(1)
Rank
HFE
DEVICE MARKING
SS8550LT1=Y2
L
120-200
H
200-350
嵌入式系统
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