SML1004R2GXN
TO–257 Package Outline.
Dimensions in mm (inches)
10.41 (0.410)
10.67 (0.420)
4.83 (0.190)
5.08 (0.200)
0.89 (0.035)
1.14 (0.045)
4TH GENERATION MOSFET
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
ISOLATED
POWER MOSFETS
16.38 (0.645)
16.89 (0.665)
13.38 (0.527)
13.64 (0.537)
3.56 (0.140)
Dia.
3.81 (0.150)
10.41 (0.410)
10.92 (0.430)
1 2 3
12.07 (0.500)
19.05 (0.750)
0.64 (0.025)
Dia.
0.89 (0.035)
2.54 (0.100)
BSC
3.05 (0.120)
BSC
V
DSS
I
D(cont)
R
DS(on)
1000V
3.0A
Ω
4.20Ω
Pin 1
Gate
Pin 2
Drain
Pin 3
Source
Pinout same as TO–220 Package.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSS
I
D
I
DM
V
GS
P
D
T
J
, T
STG
T
L
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Total Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
1000
3.0
12
±30
100
0.8
–55 to 150
300
V
A
A
V
W
W / °C
°C
STATIC ELECTRICAL RATINGS
(T
case
= 25°C unless otherwise stated)
BV
DSS
I
D(ON)
R
DS(ON)
I
DSS
I
GSS
V
GS(TH)
Characteristic
Drain – Source Breakdown Voltage
On State Drain Current
2
Drain – Source On State Resistance
2
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
Test Conditions
V
GS
= 0V , I
D
= 250µA
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
=10V , I
D
= 0.5 I
D
[Cont.]
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125°C
V
GS
= ±30V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 1.0mA
2
Min.
1000
3.0
4.20
250
1000
±100
4
Typ.
Max. Unit
V
A
Ω
µA
nA
V
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
Semelab plc.
Telephone (0455) 556565. Telex: 341927. Fax (0455) 552612.
Prelim. 5/94
SML1004R2GXN
DYNAMIC CHARACTERISTICS
Characteristic
C
DC
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Drain to Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
f = 1MHz
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 1.8Ω
Min.
Typ.
8
805
115
37
35
4.3
18
10
12
33
16
Max. Unit
12
950
160
60
55
7
27
20
24
50
32
ns
nC
pF
pF
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V , I
S
= – I
D
[Cont.]
I
S
= – I
D
[Cont.]
dl
s
/ dt = 100A/µs
150
0.8
290
1.65
Test Conditions
Min.
Typ.
Max. Unit
3.0
12
1.3
580
3.3
A
V
ns
µC
SAFE OPERATING AREA CHARACTERISTICS
SOA1
SOA2
I
LM
Characteristic
Safe Operating Area , t = 1 Sec
Safe Operating Area , t = 1 Sec
Inductive Current Clamped
Test Conditions
V
DS
= 0.4V
DSS
, I
DS
= P
D
/ 0.4V
DSS
V
DS
= P
D
/ I
D
[Cont.] , I
DS
= I
D
[Cont.]
Min.
100
100
12
Typ.
Max. Unit
W
A
THERMAL CHARACTERISTICS
R
θJC
R
θJA
Characteristic
Junction to Case
Junction to Ambient
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Min.
Typ.
Max. Unit
1.20
°C/W
80
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Semelab plc.
Telephone (0455) 556565. Telex: 341927. Fax (0455) 552612.
Prelim. 5/94
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