Datasheet> 器件分类 > 模拟混合信号IC> 触发装置> HNS440

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HNS440: 产品描述Silicon Controlled Rectifier, 40A I(T)RMS, 40000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-218; 产品类别模拟混合信号IC 触发装置; 文件大小42KB，共1页; 制造商Hutson Industries

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HNS440概述

Silicon Controlled Rectifier, 40A I(T)RMS, 40000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-218

HNS440规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	Hutson Industries
包装说明	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
外壳连接	ANODE
配置	SINGLE
关态电压最小值的临界上升速率	200 V/us
最大直流栅极触发电流	40 mA
最大直流栅极触发电压	2 V
最大维持电流	100 mA
JEDEC-95代码	TO-218
JESD-30 代码	R-PSFM-T3
JESD-609代码	e0
最大漏电流	0.5 mA
通态非重复峰值电流	400 A
元件数量	1
端子数量	3
最大通态电流	40000 A
最高工作温度	110 °C
最低工作温度	-40 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
认证状态	Not Qualified
最大均方根通态电流	40 A
重复峰值关态漏电流最大值	500 µA
断态重复峰值电压	400 V
重复峰值反向电压	400 V
表面贴装	NO
端子面层	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
触发设备类型	SCR

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MAXIMUM RATINGS

Repetitive Peak Off-State Voltage (1)

Gate open, and Tj = 110° C

RMS On-State Current at TC = 80 ° C

and Conduction Angle of 360°

Peak Surge (Non-Repetitive) On-State

Current, One-Cycle, at 50Hz or 60 Hz

Peak Gate-Trigger Current for 3µsec. Max.

Peak Gate-Power Dissipation at IGT < IGTM

Average Gate-Power Dissipation

Storage Temperature Range

Operating Temperature Range, Tj

SYMBOL VDRM

100

200

400

600

HNS025

HNS125

HNS225

HNS425

HNS625

250

0.5

DEVICE NUMBERS

HNS040

HNS140

HNS240

HNS440

HNS640

400

0.5

HNS055

HNS155

HNS255

HNS455

HNS655

550

0.5

HNS070

HNS170

HNS270

HNS470

HNS670

700

0.5

UNITS

VDRM

VOLT

It(RMS)

ITSM

IGTM

PGM

PG(AV)

Tstg

Toper

AMP

WATT

°C

-40 to +150

-40 to +110

ELECTRICAL CHARACTERISTICS

At Specified Case Temperatures

Peak Off-State Current, Gate Open

TC = 110° C VDRM &VRRM = Max. Rating

Maximum On-State Voltage, (PEAK) at

TC=25°C, and IT = Rated Amps

DC Holding Current, Gate Open

and TC = 25°C

Critical Rate-Of-Rise of Off-State Voltage,

Gate Open, TC = 110°C

DC Gate – Trigger Current for Anode Voltage

= 12VDC, RL = 60

Ω

and at TC = 25° C

DC Gate-Trigger Voltage for Anode Voltage =

12VDC, RL = 60

Ω

and at TC = 25°C

Gate-Controlled Turn-on Time for

t D + t R, IGT = 150mA and TC = 25°C

Thermal Resistance, Junction-to-Case

Note: Add “E” Suffix for Eyelet Leads

IDRM

VTM

IHO

Critical

dv/dt

IGT

VGT

Tgt

J-C

0.5

1.6

100

200

2.5

1.0

0.5

1.8

100

200

2.5

0.91

0.5

1.8

100

200

2.5

1.1

0.5

1.8

100

200

2.5

0.9

MAX.

VOLT

MAX

MAX.

V/µsec.

MAX.

VOLT

MAX

µsec.

°C/WATT

TYP

SOLID STATE CONTROL DEVICES

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