HIGH SPEED 3.3V
(4K X 9) SYNCHRONOUS
DUAL-PORT RAM
Features
◆
IDT70V914S
OBSOLETE PART
◆
◆
◆
◆
High-speed clock-to-data output times
– Commercial: 20/25ns (max.)
– Industrial: 20/25ns (max.)
Low-power operation
– IDT70V914S
Active: 250 mW (typ.)
Standby: 10 mW (typ.)
Architecture based on Dual-Port RAM cells
– Allows full simultaneous access from both ports
LVTTL-compatible, single 3.3V (+ 0.3V) power supply
Clock Enable feature
◆
◆
◆
◆
◆
◆
Functional Block Diagram
REGISTER
I/O
0-8L
OE
L
CLK
L
CLKEN
L
R/W
L
CE
L
T OR
R F
A D
P E
E D
T N
S
E E
L M IGN
O M S
S
B O DE
O EC
R EW
T N
O
N
REGISTER
WRITE
LOGIC
MEMOR
MEMORY
Y
ARRAY
ARRAY
WRITE
LOGIC
SENSE
SENSE
AMPS DECODER DECODER AMPS
REG
en
REG
en
REG
Self-
timed
Write
Logic
Self-
timed
Write
Logic
REG
A
0L
- A
11L
A
0R
- A
11R
Synchronous operation
– 5ns setup to clock, 1ns hold on all control, data, and address
inputs
– Data input, address, and control registers
– Fast 20ns clock to data out
– Self-timed write allows fast cycle times
– 20ns cycle times, 50MHz operation
LVTTL-compatible, single 3.3V (+ 0.3V) power supply
Clock Enable feature
Guaranteed data output hold times
Available in an 80-pin TQFP
Industrial temperature range (-40°C to +85°C) is available
I/O
0-8R
OE
R
CLK
R
CLKEN
R
R/W
R
CE
R
5616 drw 01
JANUARY 2009
1
©2009 Integrated Device Technology, Inc.
DSC-5616/3
IDT70V914S
High-Speed 3.3V (4K x 9) Synchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Description
The IDT70V914 is a high-speed 4K x 9 bit synchronous Dual-Port
RAM. The memory array is based on Dual-Port memory cells to allow
simultaneous access from both ports. Registers on control, data, and
address inputs provide low set-up and hold times. The timing latitude
provided by this approach allow systems to be designed with very short
cycle times. With an input data register, this device has been optimized for
applications having unidirectional data flow or bi-directional data flow in
bursts.
The IDT70V914 utilizes a 9-bit wide data path to allow for parity at the
user's option. This feature is especially useful in data communication
applications where it is necessary to use a parity bit for transmission/
reception error checking.
Fabricated using IDT’s CMOS high-performance technology, these
Dual-Ports typically operate on only 250mW of power at maximum high-
speed clock-to-data output times as fast as 20ns. An automatic power
down feature, controlled by
CE,
permits the on-chip circuitry of each port
to enter a very low standby power mode.
The IDT70V914 is packaged in an 80-pin TQFP.
Pin Configurations
(1,2,3)
Reference
N/C
A
6L
A
7L
A
8L
A
9L
A
10L
A
11L
N/C
OE
L
N/C
V
CC
R/W
L
N/C
N/C
CE
L
GND
I/O
8L
I/O
7L
I/O
6L
N/C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
N/C
N/C
A
5L
A
4L
A
3L
A
2L
A
1L
A
0L
CLKEN
L
CLK
L
CLK
R
CLKEN
R
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
N/C
IDT70V914PF
PN80-1
(4)
80-Pin TQFP
Top View
(5)
N/C
A
7R
A
8R
A
9R
A
10R
A
1
1R
N/C
OE
R
N/C
GND
GND
R/W
R
N/C
N/C
CE
R
GND
I/O
8R
I/O
7R
I/O
6R
N/C
,
3490 drw 02
NOTES:
1. All V
CC
pins must be connected to power supply.
2. All ground pins must be connected to ground supply.
3. Package body is approximately 14mm x 14mm x 1.4mm.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
N/C
N/C
I/O
5L
V
CC
I/O
4L
I/O
3L
I/O
2L
I/O
1L
I/O
0L
GND
GND
I/O
0R
I/O
1R
I/O
2R
I/O
3R
V
CC
I/O
4R
I/O
5R
N/C
N/C
6.42
2
IDT70V914S
High-Speed 3.3V (4K x 9) Synchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Absolute Maximum Ratings
(1)
Symbol
V
TERM
(2)
Rating
Terminal Voltage
with Respect to GND
Terminal Voltage
Temperature
Under Bias
Storage
Temperature
DC Output Current
Commercial
& Industrial
-0.5 to +4.6
-0.5 to V
CC
-55 to +125
-65 to +150
50
Unit
V
V
o
Maximum Operating Temperature
and Supply Voltage
(1,2)
Grade
Commercial
Industrial
Ambient Temperature
0
O
C to +70
O
C
-40
O
C to +85
O
C
GND
0V
0V
V
CC
3.3V ± 0.3
3.3V ± 0.3
5616 tbl 02
V
TERM
(2)
T
BIAS
T
STG
I
OUT
C
C
NOTES:
1. This is the parameter T
A
. This is the "instant on" case temperature.
o
mA
5616 tbl 01
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V
TERM
must not exceed V
CC
+ 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V
TERM
> V
cc
+ 10%.
Recommended DC Operating
Conditions
Symbol
V
CC
GND
V
IH
V
IL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
3.0
0
2.2
-0.3
(1)
Typ.
3.3
0
____
____
Max.
3.6
0
V
CC
+0.3
(2)
0.8
Unit
V
V
V
V
5616 tbl 03
Capacitance
Symbol
C
IN
C
OUT
(T
A
= +25°C, f = 1.0MH
z
)
TQFP Only
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 3dV
V
OUT
= 3dV
Max.
8
9
Unit
pF
pF
5616 tbl 04
NOTES:
1. V
IL
> -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed V
CC
+ 0.3V.
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output switch
from 0V to 3V or from 3V to 0V.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(V
CC
= 3.3V ± 0.3)
70V914S
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Input Leakage Current
(1)
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V
CC
= 3.6V, V
IN
= 0V to V
CC
CE
= V
IH
, V
OUT
= 0V to V
CC
I
OL
= +4mA
I
OH
= -4mA
Min.
___
___
___
Max.
10
10
0.4
___
Unit
µA
µA
V
V
5616 tbl 05
2.4
NOTE:
1. At V
CC
< 2.0V, input leakages are undefined
3
6.42
IDT70V914S
High-Speed 3.3V (4K x 9) Synchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(4)
(V
CC
= 3.3V ± 0.3V)
70V914S20
Com'l
& Ind
Symbol
I
CC
Parameter
Dynamic Operating
Current
(Both Ports Active)
Standby Current
(Both Ports - TTL
Level Inputs)
Standby Current
(One Port - TTL
Level Inputs)
Full Standby
Current (Both
Ports - All CMOS
Level Inputs)
Full Standby
Current (One
Port - All CMOS
Level Inputs)
Test Condition
CE
L
and
CE
R
= V
IL
,
Outputs Disabled
f = f
MAX
(1)
CE
L
and
CE
R
= V
IH
f = f
MAX
(1)
CE
"A"
= V
IL
and
CE
"B"
= V
IH
(3)
Active Port Outputs
Disabled, f=f
MAX
(1)
Both Ports
CE
R
and
CE
L
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or
V
IN
< 0.2V, f = 0
(2)
CE
"A"
< 0.2V and
CE
"B"
> V
CC
- 0.2V
(3)
V
IN
> V
CC
- 0.2V or
V
IN
< 0.2V, Active Port
Outputs Disabled
f = f
MAX
(1)
Version
COM'L
IND
COM'L
IND
COM'L
IND
COM'L
IND
COM'L
IND
Typ.
(2)
80
80
30
30
55
55
3
3
55
55
Max.
140
200
55
85
85
100
15
15
85
100
70V914S25
Com'l
& Ind
Typ.
(2)
75
75
25
25
45
45
3
3
45
45
Max.
130
190
50
80
80
95
15
15
80
95
mA
mA
mA
mA
Unit
mA
I
SB1
I
SB2
I
SB3
I
SB4
NOTES:
1. At f
MAX
, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/t
CYC
, using "AC TEST CONDITIONS" at input levels
of GND to 3V.
2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby.
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
4. Vcc = 3.3V, T
A
= 25°C for Typ, and are not production tested. I
CC DC
= 150mA (Typ).
5616 tbl 06
6.42
4
IDT70V914S
High-Speed 3.3V (4K x 9) Synchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
AC Test Conditions
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
3ns Max.
1.5V
1.5V
Figures 1,2 and 3
5616 tbl 07
3.3V
540Ω
DATA
OUT
435Ω
30pF
DATA
OUT
435Ω
3.3V
540Ω
5pF*
5616 drw 03
5616 drw 04
Figure 1. AC Output Test load.
Figure 2. Output Test Load
(For t
CKLZ
, t
CKHZ
, t
OLZ
, and t
OHZ
)
*Including scope and jig.
8
7
6
∆tCD
(Typical, ns)
5
4
3
2
1
0
-1
- 9pF is the I/O capacitance
of this device, and 30pF is the
AC Test Load Capacitance
20 40 60 80 100 120 140 160 180 200
Capacitance (pF)
5616 drw 05
,
Figure 3. Typical Output Derating (Lumped Capacitive Load).
5
6.42
stm32/stm8
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