RN49A5
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
RN49A5
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
•
•
Two devices are incorporated into an Ultra-Super-Mini (6-pin) package.
Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more compact
equipment and lowers assembly cost.
Diverse resistance values are available suited to a range of different
circuit designs.
Unit: mm
•
Equivalent Circuit and Bias Resister Values
Q1
R1: 10 kΩ, R2 : 47 kΩ
Q2
R1: 2.2 kΩ, R2: 10 kΩ
Q1: RN1107F
Equivalent
JEDEC
JEITA
TOSHIBA
Weight: 6.8 mg (typ.)
―
―
2-2J1A
Q2: RN2327A Equivalent
Q1 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
50
50
6
100
Unit
V
V
V
mA
Q2 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
−15
−12
−6
−500
Unit
V
V
V
mA
1
2007-11-01
RN49A5
Q1, Q2 Common Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
*
T
j
T
stg
Rating
200
150
−55~150
Unit
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
Marking
61
Equivalent Circuit
(Top View)
2
2007-11-01
RN49A5
Q1 Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistor
Resistor ratio
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
f
T
C
ob
R1
R1/R2
Test
Circuit
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Test Condition
V
CB
= 50 V, I
E
= 0
V
CE
= 50 V, I
B
= 0
V
EB
= 6 V, I
C
= 0
V
CE
= 5 V, I
C
= 10 mA
I
C
= 5 mA, I
B
= 0.25 mA
V
CE
= 0.2 V, I
C
= 5 mA
V
CE
= 5 V, I
C
= 0.1 mA
V
CE
= 10 V, I
C
= 5 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
⎯
⎯
Min
⎯
⎯
0.081
80
⎯
0.7
0.5
⎯
⎯
7
0.191
Typ.
⎯
⎯
⎯
⎯
0.1
⎯
⎯
250
3
10
0.213
Max
100
500
0.15
⎯
0.3
1.8
1.0
⎯
6
13
0.232
Unit
nA
mA
⎯
V
V
V
MHz
pF
kΩ
⎯
Q2 Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistor
Resistor ratio
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
f
T
C
ob
R1
R1/R2
Test
Circuit
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Test Condition
V
CB
=
−15
V, I
E
= 0
V
CE
=
−12
V, I
B
= 0
V
EB
=
−6
V, I
C
= 0
V
CE
=
−1
V, I
C
=
−50
mA
I
C
=
−50
mA, I
B
=
−1
mA
V
CE
=
−0.2
V, I
C
= 50 mA
V
CE
=
−5
V, I
C
=
−0.1
mA
V
CE
=
−5
V, I
C
=
−20
mA
V
CB
=
−10
V, I
E
= 0
⎯
⎯
Min
⎯
⎯
−0.378
140
⎯
−0.7
−0.5
⎯
⎯
1.54
0.187
Typ.
⎯
⎯
⎯
⎯
−0.1
⎯
⎯
200
3
2.2
0.22
Max
−100
−500
−0.703
―
−0.3
−1.8
−1.0
⎯
6
2.86
0.253
Unit
nA
mA
⎯
V
V
V
MHz
pF
kΩ
⎯
3
2007-11-01
RN49A5
Q2
IC - VI(ON)
-1000
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (μA)
-10000
Ta=100°C
Ta=100°C
IC - VI(OFF)
-100
-1000
-
25
25
COMMON
EMITTER
VCE=- 5V
-10
25
-
25
-100
-1
COMMON EMITTER
VCE=- 0.2V
-1
-10
INPUT VOLTAGE VI(ON) (V)
-100
-0.1
-0.1
-10
0
-0.5
-1
-1.5
INPUT VOLTAGE VI(OFF) (V)
-2
hFE - IC
1000
Ta=100°C
DC CURRENT GAIN hFE
COLLCTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
-1
VCE(sat) - IC
COMMON EMITTER
IC/IB=50
Ta=100°C
-0.1
25
-
25
100
-
25
25
10
COMMON EMITTER
VCE=-1V
1
-1
-10
-100
COLLECTOR CURRENT IC (mA)
-1000
-0.01
-10
-100
COLLECTOR CURRENT IC (mA)
-1000
5
2007-11-01
传感器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
