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MB6M

产品描述Rectifier Diode,
产品类别分立半导体    二极管   
文件大小114KB,共2页
制造商Galaxy Semi-Conductor Co Ltd
标准
下载文档 详细参数 全文预览

MB6M概述

Rectifier Diode,

MB6M规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Galaxy Semi-Conductor Co Ltd
包装说明R-PDIP-T4
Reach Compliance Codeunknown
最小击穿电压600 V
配置BRIDGE, 4 ELEMENTS
二极管元件材料SILICON
二极管类型BRIDGE RECTIFIER DIODE
JESD-30 代码R-PDIP-T4
最大非重复峰值正向电流35 A
元件数量4
相数1
端子数量4
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式IN-LINE
峰值回流温度(摄氏度)NOT SPECIFIED
最大重复峰值反向电压600 V
表面贴装NO
端子形式THROUGH-HOLE
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

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BL
FEATURES
GALAXY ELECTRICAL
MB2M - - - MB10M
VOLTAGE RANGE: 200 --- 1000 V
CURRENT: 0.5 A
SILICON BRIDGE RECTIFIERS
This series is UL recognized under Component Index,
file number E239431
Glass passivated chip junctions
Plastic materrial has U/L flammability classification
94V-O
High surge overload rating: 35A peak
Saves space on printed circuit boards
High temperature soldering guaranteed:
260°C/10 seconds at 5 lbs. (2.3kg) tension
MBM
4.6± 0.2
1.3± 0.15
3.6± 0.2
5.5± 0.2
3.8± 0.2
MECHANICAL DATA
Case: Molded plastic body over passivated junctions
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Polarity: Polarity symbols marked on body
Dimensions in inches and (millimeters)
Mounting Position: Any
Weight: 0.0078 ounce, 0.22 gram
2.5± 0.2
4.8± 0.2
0.3± 0.1
6.0± 0.2
0.6± 0.1
2.5± 0.25
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
MB2M
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
output current
@T
A
=25
MB4M
400
280
400
MB6M
600
420
600
0.5
0.8
35
(1)
MB8M
800
560
800
MB10M
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
200
140
200
(2)
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
@ 0.4 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=125
I
FSM
A
V
F
I
R
C
J
1.0
5.0
100
13
V
μ
A
pF
Typical junction capacitance per leg (NOTE 3)
Typical thermal resistance per leg
(NOTE 1)
R
θJA
R
θJL
T
J
T
STG
85
20
- 55 ---- +
150
- 55 ---- + 150
/W
Operating junction temperature range
Storage temperature range
NOTES: (1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3mm) pads
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20mm) mounted on 0.05 x 0.05" (1.3 x 1.3mm) solder pad
(3) Measured at 1.0 MHz and applied rev erse v oltage of 4.0 Volts
www.galaxycn.com
Document Number 0287128
BL
GALAXY ELECTRICAL
1.

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