Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-35,
参数名称 | 属性值 |
是否Rohs认证 | 符合 |
厂商名称 | Taiwan Semiconductor |
包装说明 | O-LALF-W2 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
外壳连接 | ISOLATED |
配置 | SINGLE |
二极管元件材料 | SILICON |
二极管类型 | RECTIFIER DIODE |
JEDEC-95代码 | DO-35 |
JESD-30 代码 | O-LALF-W2 |
元件数量 | 1 |
端子数量 | 2 |
最高工作温度 | 200 °C |
最低工作温度 | -65 °C |
最大输出电流 | 0.2 A |
封装主体材料 | GLASS |
封装形状 | ROUND |
封装形式 | LONG FORM |
最大功率耗散 | 0.5 W |
最大重复峰值反向电压 | 200 V |
最大反向恢复时间 | 0.05 µs |
表面贴装 | NO |
端子形式 | WIRE |
端子位置 | AXIAL |
BAV20-L0A0G | BAV20A0G | BAV21R0G | BAV21A0G | BAV21-L0R0G | BAV21-L0A0G | BAV19-L0A0G | BAV20-L0R0G | |
---|---|---|---|---|---|---|---|---|
描述 | Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-35, | Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-35, | Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35, | Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35, | Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35, | Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35, | Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, DO-35, | Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-35, |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
二极管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
二极管类型 | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
JEDEC-95代码 | DO-35 | DO-35 | DO-35 | DO-35 | DO-35 | DO-35 | DO-35 | DO-35 |
JESD-30 代码 | O-LALF-W2 | O-XALF-W2 | O-XALF-W2 | O-XALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
最高工作温度 | 200 °C | 175 °C | 175 °C | 175 °C | 200 °C | 200 °C | 200 °C | 200 °C |
最低工作温度 | -65 °C | -55 °C | -55 °C | -55 °C | -65 °C | -65 °C | -65 °C | -65 °C |
最大输出电流 | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A |
封装主体材料 | GLASS | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | GLASS | GLASS | GLASS | GLASS |
封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
封装形式 | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
最大重复峰值反向电压 | 200 V | 200 V | 250 V | 250 V | 250 V | 250 V | 120 V | 200 V |
表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO |
端子形式 | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
端子位置 | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | - | 符合 |
厂商名称 | Taiwan Semiconductor | - | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
最大功率耗散 | 0.5 W | - | - | - | 0.5 W | 0.5 W | 0.5 W | 0.5 W |
最大反向恢复时间 | 0.05 µs | - | - | - | 0.05 µs | 0.05 µs | 0.05 µs | 0.05 µs |
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