PRELIMINARY DATA SHEET
µ
PA832TF
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
Silicon Transistor
DESCRIPTION
The
µ
PA832TF has two different built-in transistors (Q1
and Q2) for low noise amplification in the VHF band to UHF
band.
PACKAGE DRAWINGS (Unit:mm)
2.10±0.1
1.25±0.1
0.22
−0.05
+0.1
1
Q2 : NF = 1.5 dB TYP. @f = 2 GHz, V
CE
= 3 V, I
C
= 3 mA
• High gain
Q1 :
|S21e|
2
= 9.0 dB TYP. @f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
Q2 :
|S21e|
2
= 8.5 dB TYP. @f = 2 GHz, V
CE
= 3 V, I
C
= 10 mA
• 2 different transistors on-chip (2SC4226, 2SC4959)
• 6-pin thin-type small mini mold package
0.65
Q1 : NF = 1.2 dB TYP. @f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
1.30
• Low noise
2.00±0.2
0.65
2
3
0.60±0.1
4
5
6
FEATURES
ON-CHIP TRANSISTORS
Q1
3-pin small mini mold part No.
2SC4226
Q2
2SC4959
PIN CONFIGURATION (Top View)
B1
E2
5
B2
4
Q2
2
E1
3
C2
The
µ
PA835TF features the Q1 and Q2 in inverted positions.
6
Q1
1
ORDERING INFORMATION
PART NUMBER
QUANTITY
Loose products
(50 pcs)
Taping products
(3 kpcs/reel)
PACKING STYLE
8-mm wide embossed tape.
Pin 6 (Q1 Base), pin 5 (Q2
Emitter), and pin 4 (Q2 Base)
face perforated side of tape.
C1
µ
PA832TF
µ
PA832TF-T1
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
Caution is required concerning excess input, such as from static electricity, because the high-frequency
process is used for this device.
The information in this document is subject to change without notice.
Document No. P12724EJ1V0DS00 (1st edition)
Date Published August 1997 N
Printed in Japan
0 to 0.1
©
0.13±0.05
V34
0.45
1997
µ
PA832TF
°
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
RATING
PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Total power dissipation
SYMBOL
Q1
V
CBO
V
CEO
V
EBO
I
C
P
T
20
12
3
100
150 in 1 element
Q2
9
6
2
30
150 in 1 element
V
V
V
mA
mW
UNIT
200 in 2 elements
Note
Junction temperature
Storage temperature
T
j
T
stg
150
−65
to +150
150
°C
°C
Note
(1) Q1
110 mW must not be exceeded for 1 element.
ELECTRICAL CHARACTERISTICS
PARAMETER
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Feedback capacitance
Insertion power gain
Noise figure
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
re
|S
21e
|
2
NF
CONDITION
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 3 V, I
C
= 7 mA
Note 1
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
7
100
3.0
4.5
0.7
9
1.2
2.5
1.5
MIN.
TYP.
MAX.
1
1
145
GHz
pF
dB
dB
UNIT
µ
A
µ
A
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty cycle
≤
2%
2.
Collector to base capacitance when measured with capacitance meter (automatic balanced bridge
method), with emitter connected to guard pin of capacitance meter.
2
µ
PA832TF
(2) Q2
ELECTRICAL CHARACTERISTICS
PARAMETER
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Feedback capacitance
Insertion power gain
Noise figure
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
re
|S
21e
|
2
NF
CONDITION
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 3 V, I
C
= 10 mA
Note 1
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
7
75
12
0.4
8.5
1.5
2.5
0.7
MIN.
TYP.
MAX.
0.1
0.1
150
GHz
pF
dB
dB
UNIT
µ
A
µ
A
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty cycle
≤
2%
2.
Collector to base capacitance when measured with capacitance meter (automatic balanced bridge
method), with emitter connected to guard pin of capacitance meter.
h
FE
CLASSIFICATION
Rank
Marking
h
FE
value of Q1
h
FE
value of Q2
FB
V34
100 to 145
75 to 150
3
µ
PA832TF
°
TYPICAL CHARACTERISTICS (T
A
= 25°C)
Q1
Total Power Dissipation vs. Ambient Temperature
Total power dissipation P
T
(mW)
Total power dissipation P
T
(mW)
Q2
Total Power Dissipation vs. Ambient Temperature
Free Air
2 elements in total
Q2 when using
1 element
Q2 when using
2 elements
100
Free Air
2 elements in total
200
Q1 when using
1 element
Q1 when using
2 elements
100
200
0
50
100
150
0
50
100
150
Ambient temperature T
A
(°C)
Ambient temperature T
A
(°C)
Collector Current vs. DC Base Voltage
20
V
CE
= 3 V
Collector current I
C
(mA)
Collector current I
C
(mA)
Collector Current vs. DC Base Voltage
50
V
CE
= 3 V
40
30
10
20
10
0
0.5
DC base voltage V
BE
(V)
1.0
0
0.5
DC base voltage V
BE
(V)
1.0
Collector current I
C
(mA)
Collector current I
C
(mA)
Collector Current vs. Collector to Emitter Voltage
25
I
B
=
160
µ
A
140
µ
A
20
120
µ
A
15
10
5
100
µ
A
80
µ
A
60
µ
A
40
µ
A
20
µ
A
5
Collector to emitter voltage V
CE
(V)
10
Collector Current vs. Collector to Emitter Voltage
60
500
µ
A
50
400
µ
A
40
30
20
10
300
µ
A
200
µ
A
I
B
= 100
µ
A
0
0
1
3
5
2
4
Collector to emitter voltage V
CE
(V)
6
4
µ
PA832TF
Q1
DC Current Gain vs. Collector Current
200
V
CE
= 3 V
DC current gain h
FE
Q2
DC Current Gain vs. Collector Current
200
DC current gain h
FE
100
5V
V
CE
= 3 V
100
50
20
10
0.5
1
5
10
50
0
0.1 0.2
Collector current I
C
(mA)
0.5 1 2
5 10 20
Collector current I
C
(mA)
50 100
Gain Bandwidth Product vs. Collector Current
20
Gain bandwidth product f
T
(GH
Z
)
Gain bandwidth product f
T
(GH
Z
)
V
CE
= 3 V
f = 1.0 GH
Z
10
Gain Bandwidth Product vs. Collector Current
14
f = 2 GHz
12
10
8
6
4
2
0.5
5V
3V
5
V
CE
= 1 V
2
1
0.5
1
5
10
Collector current I
C
(mA)
50
1
20
2
5
10
Collector current I
C
(mA)
50
Insertion Power Gain vs. Collector Current
15
Insertion power gain S
21e
2
(dB)
Insertion power gain S
21e
2
(dB)
Insertion Power Gain vs. Collector Current
10
f = 2 GHz
5V
8
3V
V
CE
= 1 V
6
V
CE
= 3 V
f = 1.0 GH
Z
10
5
4
0
0.5
1
5
10
Collector current I
C
(mA)
50
100
2
0.5
2
20
5
10
Collector current I
C
(mA)
50
5
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