DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µ
PA821TC
NPN SILICON EPITAXIAL TWIN TRANSISTOR
(WITH BUILT-IN 2
×
2SC5006)
FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
DESCRIPTION
The
µ
PA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to
UHF band.
FEATURES
• Low noise: NF= 1.2 dB TYP.@ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
• High gain: IS
21e
l
2
= 9.0 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
• Flat-lead 6-pin thin-type ultra super minimold package
•
Built-in 2 transistors (2
×
2SC5006)
ORDERING INFORMATION
Part Number
Package
Flat-lead 6-pin
thin-type ultra
super minimold
Quantity
Loose products
(50 pcs)
Taping products
(3 kp/reel)
Supplying Form
Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base) face to perforation
side of the tape.
µ
PA821TC
µ
PA821TC-T1
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
µ
PA821TC. Unit sample quantity is 50 pcs).
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
Note
Ratings
20
12
3
100
200 in 1 element
230 in 2 elements
150
−65
to 150
Unit
V
V
V
mA
mW
Junction Temperature
Storage Temperature
T
j
T
stg
°C
°C
2
Note
Mounted on 1.08 cm
×
1.0 mm glass epoxy substrate.
Caution Electro-static sensitive devices.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14552EJ1V0DS00 (1st edition)
Date Published November 1999 N CP(K)
Printed in Japan
©
1999
µ
PA821TC
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feedback Capacitance
Insertion Power Gain
Noise Figure
Symbol
I
CBO
I
EBO
h
FE
f
T
C
re
|S
21e
|
NF
2
Conditions
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 3 V, I
C
= 7 mA
Note 1
MIN.
−
−
70
3.0
−
7.0
−
TYP.
−
−
−
4.5
0.7
9.0
1.2
MAX.
1.0
1.0
140
−
1.5
−
2.5
Unit
µ
A
µ
A
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
GHz
pF
dB
dB
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Notes 1.
Pulse Measurement: PW
≤
350
µ
s, Duty Cycle
≤
2 %
2.
Capacitance between collector and base measured with a capacitance meter (auto−balancing bridge
method). Emitter should be connected to the guard pin of capacitance meter.
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
81
70 to 140
2
Data Sheet P14552EJ1V0DS00
µ
PA821TC
TYPICAL CHARACTERISTICS (T
A
= +25
°
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
230
200
2 Elements in total
Free Air
Collector Current I
C
(mA)
20
V
CE
= 3 V
COLLECTOR CURRENT vs.
DC BASE VOLTAGE
Total Power Dissipation P
T
(mW)
Per
Element
10
100
0
0
50
100
150
0
0
0.5
DC Base Voltage V
BE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1.0
Ambient Temperature T
A
(°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
1 000
16
Collector Current I
C
(mA)
V
CE
= 3 V
I
B
= 160
µ
A
I
B
= 140
µ
A
I
B
= 120
µ
A
I
B
= 100
µ
A
I
B
= 80
µ
A
I
B
= 60
µ
A
I
B
= 40
µ
A
I
B
= 20
µ
A
10
0.1
DC Current Gain h
FE
12
100
8
4
0
0
1
2
3
4
5
6
1
10
100
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
Data Sheet P14552EJ1V0DS00
3
µ
PA821TC
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
7.00
Gain Bandwidth Product f
T
(GHz)
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
14.00
Insertion Power Gain
S
21e
2
(dB)
6.00
5.00
4.00
3.00
2.00
1.00
0.00
V
CE
= 3 V
f = 1 GHz
12.00
10.00
8.00
6.00
4.00
2.00
V
CE
= 3 V
f = 1 GHz
1
10
Collector Current I
C
(mA)
100
1
10
Collector Current I
C
(mA)
100
NOISE FIGURE vs. COLLECTOR CURRENT
6.00
5.00
Noise Figure NF (dB)
Insertion Power Gain
S
21e
2
(dB)
INSERTION POWER GAIN vs. FREQUENCY
25.0
V
CE
= 3 V
I
C
= 7 mA
20.0
V
CE
= 3 V
f = 1 GHz
4.00
3.00
2.00
1.00
0.00
15.0
10.0
5.0
1
10
Collector Current I
C
(mA)
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1 MHz
100
0.0
0.1
1.0
Frequency f (GHz)
10.0
Feedback Capacitance C
re
(pF)
0.800
0.600
0.400
0.200
0.000
1
10
Collector to Base Voltage V
CB
(V)
100
4
Data Sheet P14552EJ1V0DS00
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