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SMAJ58CA-13

产品描述Trans Voltage Suppressor Diode, 400W, 58V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC, SMA, 2 PIN
产品类别分立半导体    二极管   
文件大小68KB,共4页
制造商Diodes Incorporated
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SMAJ58CA-13概述

Trans Voltage Suppressor Diode, 400W, 58V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC, SMA, 2 PIN

SMAJ58CA-13规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Diodes Incorporated
包装说明R-PDSO-C2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性EXCELLENT CLAMPING CAPABILITY
最大击穿电压71.2 V
最小击穿电压64.4 V
击穿电压标称值67.8 V
最大钳位电压93.6 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码R-PDSO-C2
JESD-609代码e0
湿度敏感等级1
最大非重复峰值反向功率耗散400 W
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)235
极性BIDIRECTIONAL
最大功率耗散1 W
认证状态Not Qualified
最大重复峰值反向电压58 V
表面贴装YES
技术AVALANCHE
端子面层Tin/Lead (Sn/Pb)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间10

SMAJ58CA-13文档预览

SMAJ5.0(C)A - SMAJ170(C)A
400W SURFACE MOUNT TRANSIENT VOLTAGE
SUPPRESSOR
Features
·
·
·
·
·
·
·
400W Peak Pulse Power Dissipation
5.0V - 170V Standoff Voltages
Glass Passivated Die Construction
Uni- and Bi-Directional Versions Available
Excellent Clamping Capability
Fast Response Time
Plastic Material: UL Flammability
Classification Rating 94V-0
B
Dim
SMA
Min
2.29
4.00
1.27
0.15
4.80
0.10
0.76
2.01
Max
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
A
C
A
B
C
D
E
G
H
J
Mechanical Data
·
·
·
·
·
·
·
Case: SMA, Transfer Molded Epoxy
Terminals: Solderable per MIL-STD-202,
Method 208
Also Available in Lead Free Plating (Matte Tin
Finish). Please see Ordering Information,
Note 5, on Page 4
Polarity Indicator: Cathode Band
(Note: Bi-directional devices have no polarity
indicator.)
Marking: Date Code and Marking Code
See Page 3
Weight: 0.064 grams (approx.)
Ordering Info: See Page 3
@ T
A
= 25°C unless otherwise specified
Symbol
P
PK
I
FSM
PM
(AV)
@ I
PP
= 35A
V
F
T
j
T
STG
Value
400
40
1.0
3.5
-55 to +150
-55 to +175
D
J
H
G
E
All Dimensions in mm
Maximum Ratings
Characteristic
Peak Pulse Power Dissipation
(Non repetitive current pulse derated above T
A
= 25°C) (Note 1)
Peak Forward Surge Current, 8.3ms Single Half Sine Wave
Superimposed on Rated Load (JEDEC Method) (Notes 1, 2, & 3)
Steady State Power Dissipation @ T
L
= 75°C
Instantaneous Forward Voltage
(Notes 1, 2, & 3)
Operating Temperature Range
Storage Temperature Range
Notes:
Unit
W
A
W
V
°C
°C
1. Valid provided that terminals are kept at ambient temperature.
2. Measured with 8.3ms single half sine-wave. Duty cycle = 4 pulses per minute maximum.
3. Unidirectional units only.
DS19005 Rev. 10 - 2
1 of 4
www.diodes.com
SMAJ5.0(C)A - SMAJ170(C)A
ã
Diodes Incorporated
Part Number
Add C For
Bi-Directional
(Note 4)
SMAJ5.0(C)A
SMAJ6.0(C)A
SMAJ6.5(C)A
SMAJ7.0(C)A
SMAJ7.5(C)A
SMAJ8.0(C)A
SMAJ8.5(C)A
SMAJ9.0(C)A
SMAJ10(C)A
SMAJ11(C)A
SMAJ12(C)A
SMAJ13(C)A
SMAJ14(C)A
SMAJ15(C)A
SMAJ16(C)A
SMAJ17(C)A
SMAJ18(C)A
SMAJ20(C)A
SMAJ22(C)A
SMAJ24(C)A
SMAJ26(C)A
SMAJ28(C)A
SMAJ30(C)A
SMAJ33(C)A
SMAJ36(C)A
SMAJ40(C)A
SMAJ43(C)A
SMAJ45(C)A
SMAJ48(C)A
SMAJ51(C)A
SMAJ54(C)A
SMAJ58(C)A
SMAJ60(C)A
SMAJ64(C)A
SMAJ70(C)A
SMAJ75(C)A
SMAJ78(C)A
SMAJ85(C)A
SMAJ90(C)A
SMAJ100(C)A
SMAJ110(C)A
SMAJ120(C)A
SMAJ130(C)A
SMAJ150(C)A
SMAJ160(C)A
SMAJ170(C)A
Notes:
Reverse
Standoff
Voltage
V
RWM
(V)
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
110
120
130
150
160
170
Breakdown
Voltage
V
BR
@ I
T
(Note 5)
Min (V)
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
77.8
83.3
86.7
94.4
100
111
122
133
144
167
178
189
Max (V)
7.25
7.37
7.98
8.60
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.3
71.2
73.7
78.6
86.0
92.1
95.8
104
111
123
135
147
159
185
197
209
Test
Current
I
T
(mA)
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Max. Reverse
Leakage @
V
RWM
(Note 6)
I
R
(mA)
800
800
500
200
100
50
10
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Max. Clamping
Voltage @ I
pp
V
C
(V)
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103
113
121
126
137
146
162
177
193
209
243
259
275
Max. Peak Pulse
Current
I
pp
(A)
43.5
38.8
35.7
33.3
31.0
29.4
27.7
26.0
23.5
22.0
20.1
18.6
17.2
16.4
15.3
14.5
13.7
12.3
11.2
10.3
9.5
8.8
8.3
7.5
6.9
6.2
5.7
5.5
5.2
4.9
4.6
4.3
4.1
3.9
3.5
3.3
2.2
2.9
2.7
2.5
2.3
2.0
1.9
1.6
1.5
1.4
Marking Code
BI-
TE
TG
TK
TM
TP
TR
TT
TV
TX
TZ
UE
UG
UK
UM
UP
UR
UT
UV
UX
UZ
VE
VG
VK
VM
VP
VR
VT
VV
VX
VZ
WE
WG
WK
WM
WP
WR
WT
WV
WX
WZ
XE
XG
XK
XM
XP
XR
UNI-
HE
HG
HK
HM
HP
HR
HT
HV
HX
HZ
IE
IG
IK
IM
IP
IR
IT
IV
IX
IZ
JE
JG
JK
JM
JP
JR
JT
JV
JX
JZ
RE
RG
RK
RM
RP
RR
RT
RV
RX
RZ
SE
SG
SK
SM
SP
SR
4. Suffix C denotes Bi-directional device.
5. V
BR
measured with I
T
current pulse = 300ms
6. For Bi-Directional devices having V
RWM
of 10V and under, the I
R
is doubled.
DS19005 Rev. 10 - 2
2 of 4
www.diodes.com
SMAJ5.0(C)A - SMAJ170(C)A
100
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT
10000
T
j
= 25°C
75
C
T
, JUNCTION CAPACITANCE (pF)
Unidirectional
1000
50
Bidirectional
100
25
10 X 1000 Waveform
as defined by REA
0
0
25
50
75
100 125 150 175 200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Pulse Derating Curve
100
10
1
10
100
1000
V
WM
, STANDOFF VOLTAGE (V)
Fig. 2 Typical Total Capacitance
I
P
, PEAK PULSE CURRENT (%I
pp
)
P
d
, PEAK PULSE POWER (kW)
T
j
= 25°C
Non Repetitive
Pulse Waveform
Shown in Fig. 4
100
Peak Value I
pp
10
Half Value I
pp
/2
50
1.0
t
p
0.1
0.1
1.0
10
100
1000
10000
0
10 X 1000 Waveform
as defined by R.E.A.
0
1
2
3
t, TIME (ms)
Fig. 4 Pulse Waveform
PM
(AV),
STEADY STATE POWER DISSIPATION (W)
60
PEAK FORWARD SURGE CURRENT, (A)
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC METHOD)
1.0
50
0.8
40
0.6
30
0.4
20
0.2
60Hz Resistive or
Inductive Load
10
0
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
Fig. 5 Maximum Non-Repetitive Surge Current
0.0
0
25
50
75
100
125
150
175
200
T
L
, LEAD TEMPERATURE (°C)
Fig. 6 Steady State Power Derating Curve
DS19005 Rev. 10 - 2
3 of 4
www.diodes.com
SMAJ5.0(C)A - SMAJ170(C)A
Ordering Information
Device
SMAJXXX(C)A-13
Notes:
(Note 4)
Packaging
SMA
Shipping
5000/Tape & Reel
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free version (with Lead Free terminal finish) part number, please add "-F" suffix to part number above.
Example: SMAJ170A-13-F.
Marking Information
YWW
XX
XX = Product type marking code (See Page 2)
= Manufacturers’ code marking
YWW = Date code marking
Y = Last digit of year ex: 2 for 2002
WW = Week code 01 to 52
DS19005 Rev. 10 - 2
4 of 4
www.diodes.com
SMAJ5.0(C)A - SMAJ170(C)A

SMAJ58CA-13相似产品对比

SMAJ58CA-13 SMAJ58A-13 SMAJ14CA-13-F SMAJ51A-13 SMAJ22CA-13-F SMAJ13A-13
描述 Trans Voltage Suppressor Diode, 400W, 58V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC, SMA, 2 PIN Trans Voltage Suppressor Diode, 400W, 58V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, SMA, 2 PIN Trans Voltage Suppressor Diode, 400W, 14V V(RWM), Bidirectional, 1 Element, Silicon, GREEN, PLASTIC, SMA, 2 PIN Trans Voltage Suppressor Diode, 400W, 51V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, SMA, 2 PIN Trans Voltage Suppressor Diode, 400W, 22V V(RWM), Bidirectional, 1 Element, Silicon, GREEN, PLASTIC, SMA, 2 PIN Trans Voltage Suppressor Diode, 400W, 13V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, SMA, 2 PIN
是否Rohs认证 不符合 不符合 符合 不符合 符合 不符合
厂商名称 Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
包装说明 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
针数 2 2 2 2 2 2
Reach Compliance Code unknown unknown not_compliant unknown not_compliant unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
最大击穿电压 71.2 V 71.2 V 17.2 V 62.7 V 26.9 V 15.9 V
最小击穿电压 64.4 V 64.4 V 15.6 V 56.7 V 24.4 V 14.4 V
击穿电压标称值 67.8 V 67.8 V 16.4 V 59.7 V 25.65 V 15.15 V
最大钳位电压 93.6 V 93.6 V 23.2 V 82.4 V 35.5 V 21.5 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
JESD-609代码 e0 e0 e3 e0 e3 e0
湿度敏感等级 1 1 1 1 1 1
最大非重复峰值反向功率耗散 400 W 400 W 400 W 400 W 400 W 400 W
元件数量 1 1 1 1 1 1
端子数量 2 2 2 2 2 2
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 235 235 260 235 260 235
极性 BIDIRECTIONAL UNIDIRECTIONAL BIDIRECTIONAL UNIDIRECTIONAL BIDIRECTIONAL UNIDIRECTIONAL
最大功率耗散 1 W 1 W 1 W 1 W 1 W 1 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 58 V 58 V 14 V 51 V 22 V 13 V
表面贴装 YES YES YES YES YES YES
技术 AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn) Tin/Lead (Sn/Pb)
端子形式 C BEND C BEND C BEND C BEND C BEND C BEND
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 10 10 40 10 40 10
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