GT40T321
TOSHIBA Insulated Gate Bipolar Transistor
Silicon N Channel IGBT
GT40T321
Consumer Application
Voltage Resonance Inverter Switching Application
Sixth Generation IGBT
•
•
•
•
•
FRD included between emitter and collector
Enhancement mode type
High speed
Low saturation voltage
High Junction temperature
IGBT: t
f
=
0.24
μs
(typ.) (I
C
=
40 A)
FRD: t
rr
=
0.7
μs
(typ.) (di/dt
= −20
A/μs)
V
CE (sat)
=2.15
V (typ.) (I
C
=
40 A)
T
j
= 175°C (max)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1ms
DC
1ms
Symbol
V
CES
V
GES
I
C
I
CP
I
F
I
FP
P
C
T
j
T
stg
Rating
1500
±
25
40
80
30
80
230
175
-55 to 175
Unit
V
V
A
JEDEC
JEITA
TOSHIBA
⎯
⎯
2-16C1C
Diode forward current
Collector power dissipation
(Tc
=
25°C)
Junction temperature
Storage temperature
A
Weight: 4.6 g (typ.)
W
°C
°C
Note 1: Ensure that the channel temperature does not exceed 175°C during use of the device.
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher
temperature. In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a
device, it leads to thermorunaway and results in destruction. Therefore, please design heat release of a device
with due consideration to the temperature rise of IGBT.
1
2009-12-04
GT40T321
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Diode forward voltage
Reverse recovery time
Thermal Resistance (IGBT)
Thermal Resistance (Diode)
Symbol
I
GES
I
CES
V
GE (OFF)
V
CE (sat)
C
ies
t
r
t
on
t
f
t
off
V
F
t
rr
Rth(j-c)
Rth(j-c)
Test Condition
V
GE
= ±
25 V, V
CE
=
0
V
CE
=
1500 V, V
GE
=
0
I
C
=40
mA, V
CE
=
5 V
I
C
=
5 A, V
GE
=
15 V
I
C
=
40 A, V
GE
=
15 V
V
CE
=
10 V, V
GE
=
0, f
=
1 MHz
Min
⎯
⎯
4.0
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
1.25
2.15
2400
0.15
0.24
0.24
0.54
1.7
0.7
⎯
⎯
Max
±
100
1
7.0
1.90
2.50
⎯
Unit
nA
mA
V
V
pF
See Note 3 circuit diagram.
V
CC
= 600 V, I
C
= 40A
V
GG
= ±15 V, R
G
= 51
Ω
I
F
=
30 A, V
GE
=
0
I
F
=
30 A, V
GE
=
0, di/dt
= −
20 A/μs
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.40
μs
⎯
2.3
⎯
0.65
1.25
V
µs
°C/W
°C/W
Note 3: Switching time measurement circuit and input/output waveforms
V
GE
0
10Ω
15Ω
R
G
0
V
CC
0
V
CE
t
f
t
off
90%
10%
I
C
90%
10%
10%
t
r
t
on
90%
Marking
Equivalent Circuit
Collector
TOSHIBA
40T321
Part No. (or abbreviation code)
Lot No.
Note 4
Gate
Emitter
Note 4: A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2009-12-04
GT40T321
I
C
– V
CE
80
80
Common emitter
Tc
= −40°C
10
15
9
8.5
Common emitter
Tc
=
25°C
I
C
– V
CE
10
15
9
8.5
8
(A)
60
20
8
(A)
60
20
Collector current IC
Collector current IC
40
7.5
20
VGE
=
7 V
0
0
1
2
3
4
5
40
7.5
20
VGE
=
7 V
0
0
1
2
3
4
5
Collector-emitter voltage
VCE (V)
Collector-emitter voltage VCE (V)
I
C
– V
CE
80
Common emitter
Tc
=
150°C
15
10
9
8
80
Common emitter
VGE
=
15 V
I
C
– V
CE
150
(A)
60
(A)
20
7.5
60
25
Collector current IC
Collector current IC
40
40
Tc=-40℃
VGE
=
7 V
20
20
0
0
1
2
3
4
5
0
0
1
2
3
4
5
Collector-emitter voltage
VCE (V)
Collector -emitter voltage
VCE (V)
V
CE (sat)
– Tc
5
Common emitter
VGE
=
15 V
80
Common emitter
VCE
=
5 V
I
C
– V
GE
Collector-emitter saturation voltage
V
CE
(sat) (V)
(A)
Collector current IC
4
80
3
60
40
2
20
60
40
25
20
Tc
=
150°C
−40
1
IC
=10
A
0
−75
−25
25
75
125
175
0
2
4
6
8
10
Case temperature Tc (°C)
Gate-emitter voltage
VGE (V)
3
2009-12-04
GT40T321
V
CE,
V
GE
– Q
G
400
Common emitter
RL
=
3.75
Ω
Tc
=
25°C
300
20
10000
5000
3000
Cies
C – V
CE
V
CE
(V)
(pF)
Capacitance C
15
V
GE
(V)
1000
500
300
100
50
30
10
5
3
1
0.1
1
10
100
1000
Common emitter
VGE = 0
f = 1MHz
Tc = 25°C
Cres
Coes
Collector-emitter voltage
200
VCE
=
300 V
10
100
100
200
5
0
0
50
100
150
0
200
Gate charge Q
G
(nC)
Gate-emitter voltage
Collector-emitter voltage V
CE
(V)
Switching Time – R
G
10
5
3
Common emitter
VCC
=
600 V
IC
=40
A
VGG
= ±15
V
Tc
=
25°C
10
5
3
toff
Switching Time – I
C
Common emitter
VCC
=
600 V
RG
=
51
Ω
VGG
= ±15
V
Tc
=
25°C
toff
tf
ton
0.1
0.05
0.03
0.01
tr
Switching time (μs)
1
0.5
0.3
Switching time (μs)
ton
tr
tf
1
0.5
0.3
0.1
0.05
0.03
0.01
1
10
100
1000
0
10
20
30
40
50
Gate resistance
R
G
(Ω)
Collector current I
C
(A)
Safe Operating Area
500
300
100
r
th (j-c)
– t
w
Transient thermal impedance(Junction−case)
rth(j−c) (°C/W)
10
1000
*:
Single non-repetitive pulse Tc
=
25°C
Curves must be derated linearly with
increases in temperature.
IC max (pulsed)
*
10
μs*
100
μs*
IC max
10 ms*
1 ms*
(continuous)
Diode stage
1
IGBT stage
10
−
1
(A)
Collector current I
C
50
30
10
5
3
1
0.5
0.3
DC operation
10 ms*
10
−
2
Tc
=
25°C
10
−
3
VCE max
0.1
1
10
100
1000
10000
10
−
5
10
−
4
10
−
3
10
−
2
10
−
1
1
10
10
2
Pulse width
t
w
(s)
Collector-emitter voltage
V
CE
(V)
4
2009-12-04
GT40T321
I
F
– V
F
100
I
rr
, t
rr
– I
F
20
2.5
Common emitter
di/dt =
−20
A/μs
Tc = 25°C
I
rr
(A)
80
16
2
(A)
Peak reverse recovery current
Forward current I
F
60
12
1.5
Irr
8
1
40
125
20
Common emitter
VGE = 0
0
0
1
2
3
4
5
4
trr
0.5
0
0
20
40
60
80
100
0
Forward voltage V
F
(V)
Forward current I
F
(A)
50
I
rr
, t
rr
– di/dt
Common emitter
IF = 30 A
Tc = 25°C
1
(A)
Irr
40
0.8
Peak reverse recovery current
30
trr
20
0.4
10
Irr
0.2
0
0
20
40
60
80
100
120
0
di/dt (A/μs)
Reverse recovery time
0.6
t
rr
(μs)
5
2009-12-04
Reverse recovery time
Tc
=
40°C
25
t
rr
(μs)
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