GT40J121
Discrete IGBTs
Silicon N-Channel IGBT
GT40J121
1. Applications
•
•
Dedicated to Current-Resonant Inverter Switching Applications
Dedicated to Partial-Switching Power Factor Correction (PFC) Applications
The product(s) described herein should not be used for any other application.
Note:
2. Features
(1)
(2)
(3)
(4)
(5)
Sixth generation
Enhancement mode
High-speed switching: t
f
= 0.20
µs
(typ.) (I
C
= 40 A)
Low saturation voltage: V
CE(sat)
= 1.45 V (typ.) (I
C
= 40 A)
TO-3P(N)IS (Toshiba package name)
3. Packaging and Internal Circuit
1: Gate
2: Collector
3: Emitter
TO-3P(N)IS
1
2011-06-30
Rev.1.0
GT40J121
4. Absolute Maximum Ratings (Note) (T
a
= 25
, unless otherwise specified)
25
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current (DC)
Collector current (1 ms)
Collector current (100
µs)
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature
Mounting torque
(T
c
= 100)
(T
c
= 25)
(Note 1)
T
j
T
stg
TOR
P
C
Symbol
V
CES
V
GES
I
C
I
CP
Rating
600
±25
40
80
100
32
80
150
-55 to 150
0.6
Nm
W
A
Unit
V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher
temperature.
In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a device, it leads
to thermorunaway and results in destruction.
Therefore, please design heat release of a device with due consideration to the temperature rise of IGBT.
Note 1: Ensure that the junction temperature does not exceed 150
.
5. Thermal Characteristics
Characteristics
Junction-to-case thermal resistance
Symbol
R
th(j-c)
Max
1.56
Unit
/W
2
2011-06-30
Rev.1.0
GT40J121
6. Electrical Characteristics
6.1. Static Characteristics (T
a
= 25
, unless otherwise specified)
25
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Symbol
I
GES
I
CES
V
CE(sat)
V
CE(sat)
Test Condition
V
GE
=
±25
V, V
CE
= 0 V
V
CE
= 600 V, V
GE
= 0 V
I
C
= 10 A, V
GE
= 15 V
I
C
= 40 A, V
GE
= 15 V
Min
4.5
Typ.
1.1
1.45
Max
±100
1.0
7.5
2.1
Unit
nA
mA
V
V
GE(OFF)
I
C
= 40 mA, V
CE
= 5 V
6.2. Dynamic Characteristics (T
a
= 25
, unless otherwise specified)
25
Characteristics
Input capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
C
ies
t
r
t
on
t
f
t
off
Test Condition
V
CE
= 10 V, V
GE
= 0 V,
f = 1 MHz
Resistive load
V
CC
= 300 V, I
C
= 40 A,
V
GG
=
±15
V, R
G
= 39
Ω
See Fig. 6.2.1, 6.2.2.
Min
Typ.
2700
0.17
0.25
0.20
0.50
Max
0.40
Unit
pF
µs
Fig. 6.2.1 Test Circuit of Switching Time
Fig. 6.2.2 Timing Chart of Switching Time
7. Marking (Note)
Fig. 7.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on
the restriction of the use of certain hazardous substances in electrical and electronic equipment.
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
3
2011-06-30
Rev.1.0
GT40J121
8. Characteristics Curves (Note)
Fig. 8.1 I
C
- V
CE
Fig. 8.2 I
C
- V
CE
Fig. 8.3 I
C
- V
CE
Fig. 8.4 I
C
- V
GE
Fig. 8.5 V
CE(sat)
- T
c
Fig. 8.6 V
CE
, V
GE
- Q
g
4
2011-06-30
Rev.1.0
GT40J121
Fig. 8.7 C - V
CE
Fig. 8.8 Switching Time - R
G
Fig. 8.9 Switching Time - I
C
Fig. 8.10 Safe Operating Area
(Guaranteed Maximum)
Fig. 8.11 Reverse Bias SOA
(Guaranteed Maximum)
5
2011-06-30
Rev.1.0
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