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MT45W4MV16BBB-601WT

产品描述Pseudo Static RAM, 4MX16, 60ns, CMOS, PBGA54, LEAD FREE, VFBGA-54
产品类别存储    存储   
文件大小814KB,共53页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准  
下载文档 详细参数 全文预览

MT45W4MV16BBB-601WT概述

Pseudo Static RAM, 4MX16, 60ns, CMOS, PBGA54, LEAD FREE, VFBGA-54

MT45W4MV16BBB-601WT规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Micron Technology
零件包装代码BGA
包装说明VFBGA,
针数54
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
最长访问时间60 ns
JESD-30 代码R-PBGA-B54
JESD-609代码e1
长度8 mm
内存密度67108864 bit
内存集成电路类型PSEUDO STATIC RAM
内存宽度16
功能数量1
端子数量54
字数4194304 words
字数代码4000000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-25 °C
组织4MX16
封装主体材料PLASTIC/EPOXY
封装代码VFBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行PARALLEL
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度1 mm
最大供电电压 (Vsup)1.95 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级OTHER
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式BALL
端子节距0.75 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
宽度6 mm

文档预览

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PRELIMINARY
4 MEG x 16, 2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
BURST
CellularRAM
TM
Features
Single device supports asynchronous, page, and burst
operations
V
CC
, V
CC
Q Voltages
1.70V–1.95V V
CC
1.70V–2.25V V
CC
Q (Option W)
2.30V–2.70V V
CC
Q (Option V—contact factory)
2.70V–3.30V V
CC
Q (Option L—contact factory)
Random Access Time: 70ns
Burst Mode Write Access
Continuous burst
Burst Mode Read Access
4, 8, or 16 words, or continuous burst
MAX clock rate: 104 MHz ( CLK = 9.62ns)
Burst initial latency: 39ns (4 clocks) @ 104 MHz
t
ACLK: 6.5ns @ 104 MHz
t
MT45W4MW16BFB MT45W2MW16BFB
Figure 1: Ball Assignment
54-Ball VFBGA
1
A
B
C
D
E
F
G
H
J
LB#
2
OE#
3
A0
4
A1
5
A2
6
CRE
DQ8
UB#
A3
A4
CE#
DQ0
DQ9
DQ10
A5
A6
DQ1
DQ2
V
SS
Q
DQ11
A17
A7
DQ3
V
CC
Page Mode Read Access
Sixteen-word page size
Interpage read access: 70ns
Intrapage read access: 20ns
Low Power Consumption
Asynchronous READ < 25mA
Intrapage READ < 15mA
Initial access, burst READ: (39ns [4 clocks]
@ 104 MHz) < 35mA
Continuous burst READ < 15mA
Standby: 120µA (64Mb), 110µA (32MB)—standard
100µA (64Mb), 90µA (32Mb)—low-power option
Deep power-down < 10µA
Low-Power Features
Temperature Compensated Refresh (TCR)
Partial Array Refresh (PAR)
Deep Power-Down (DPD) Mode
Designator
V
CC
Q
DQ12
A21
A16
DQ4
V
SS
DQ14
DQ13
A14
A15
DQ5
DQ6
DQ15
A19
A12
A13
WE#
DQ7
A18
A8
A9
A10
A11
A20
WAIT
CLK
ADV#
NC
NC
NC
Top View
(Ball Down)
See Table 1 on page 6 for ball descriptions, and Figure 45 on
page 52 for 54-ball mechanical drawing.
Options
(continued)
Designator
6
8
1
1
None
L
WT
IT
1
Options
Configuration:
4 Meg x 16
2 Meg x 16
V
CC
Core Voltage Supply:
1.80V – MT45WxMx16B
V
CC
Q I/O Voltage
3.0V – MT45WxML16B
2.5V – MT45WxMV16B
1.8V – MT45WxMW16B
Package
54-ball VFBGA
54-ball VFBGA—Lead-free
Timing
60ns access
70ns access
85ns access
MT45W4Mx16B
MT45W2Mx16B
W
L
1
V
1
W
FB
BB
1
Frequency
66 MHz
80 MHz
104 MHz
Standby power
Standard
Low-power
Operating Temperature Range
Wireless (-25°C to +85°C)
Industrial (-40°C to +85°C)
1. Contact factory.
-60
-70
-85
1
Part Number Example:
MT45W2MW16BFB-706LWT
1
09005aef80be1fbd
Burst CellularRAM.fm - Rev. D 5/19/04 EN
©2004 Micron Technology, Inc. All Rights Reserved.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.

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