Zener Diodes
MA111
MAZF000
Silicon planer type
Surge absorption circuit
s
Features
q
q
Series
Unit : mm
Cathode
Anode
0.625
S-Mini type package (2-pin)
No rank classification (V
Z
= 3.3 to 12V)
0.5±0.1
M
Di ain
sc te
on na
tin nc
ue e/
d
2
0.16
–0.06
+0.1
1
s
Absolute Maximum Ratings
(Ta= 25˚C)
Parameter
Symbol
I
F(AV)
Average forward current
Total power dissipation
Junction temperature
Storage temperature
Instanious forward current
I
FRM
P
tot
*
T
stg
T
j
* With a printed-circuit board
1
s
Common Electrical Characteristics
(Ta= 25˚C)*
Parameter
Symbol
V
F
R
Z
I
R
C
t
V
Z
*
2
Forward voltage
Zener voltage
is
Operating resistance
Reverse current
Terminal capacitance
M
ai
Note 1. Test method : Depend on JIS C7031 testing
2. Rated input/output frequency : 5MHz
3. *
1
: The V
Z
value is for the temperature of 25˚C. In other cases, carry out the temperature compensation.
*
2
: Guaranteeed at 20ms after power application
Pl
e
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
0.4±0.1
1.7±0.1
2.5±0.2
0.4±0.1
1.25±0.1
0.3
Rating
100
200
150
150
Unit
mA
mA
˚C
˚C
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
mW
– 55 to +150
ue
Condition
min
typ
max
1.0
Unit
V
V
nt
in
I
F
= 15mA
0.9
co
I
Z
.............. Specified value
I
Z
.............. Specified value
............. Specified value
V
R
Refer to the electrical characteristics
list of P483
Ω
/D
µA
ce
............. Specified value
V
R
pF
nt
en
an
0.7±0.1
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semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Consult our sales staff in advance for information on the following applications:
–
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–
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