RN1601~RN1606
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN1601, RN1602, RN1603
RN1604, RN1605, RN1606
Unit: mm
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Including two devices in SM6 (super-mini-type with six (6) leads)
With built-in bias resistors
Simplified circuit design
Reduced number of parts and manufacturing process
Complementary to RN2601 to RN2606
Equivalent Circuit and Bias Resistor Values
Type No.
RN1601
RN1602
RN1603
RN1604
RN1605
RN1606
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
SM6
JEDEC
―
JEITA
―
TOSHIBA
2-3N1A
Weight: 15mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1601 to 1606
RN1601 to 1606
RN1601 to 1604
RN1605, 1606
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
Rating
50
50
10
5
100
300
150
−55
to150
Unit
V
V
V
mA
mW
°C
°C
Equivalent Circuit
(Top View)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
1
2010-05-19
RN1601~RN1606
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector cut-off current
RN1601 to 1606
RN1601
RN1602
Emitter cut-off current
RN1603
RN1604
RN1605
RN1606
RN1601
RN1602
DC current gain
RN1603
RN1604
RN1605
RN1606
Collector-emitter
saturation voltage
RN1601 to 1606
RN1601
RN1602
Input voltage (ON)
RN1603
RN1604
RN1605
RN1606
Input voltage (OFF)
Transition frequency
Collector output
capacitance
RN1601 to 1604
RN1605 to 1606
RN1601 to 1606
RN1601 to 1606
RN1601
RN1602
Input resistor
RN1603
RN1604
RN1605
RN1606
RN1601 to 1604
Resistor ratio
RN1605
RN1606
R1/R2
R1
V
I (OFF)
f
T
C
ob
V
I (ON)
V
CE (sat)
h
FE
I
EBO
Symbol
I
CBO
I
CEO
Test
Circuit
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
V
CE
= 5 V, I
C
= 0.1 mA
V
CE
= 10 V, I
C
= 5 mA
V
CB
= 10 V, I
E
= 0
f = 1 MHz
V
CE
= 0.2 V, I
C
= 5 mA
I
C
= 5 mA,
I
B
= 0.25 mA
V
CE
= 5 V, I
C
= 10 mA
V
EB
= 5 V, I
C
= 0
V
EB
= 10 V, I
C
= 0
Test Condition
V
CB
= 50 V, I
E
= 0
V
CE
= 50 V, I
B
= 0
Min
―
―
0.82
0.38
0.17
0.082
0.078
0.074
30
50
70
80
80
80
―
1.1
1.2
1.3
1.5
0.6
0.7
1.0
0.5
―
―
3.29
7
15.4
32.9
1.54
3.29
0.9
Typ.
―
―
―
―
―
―
―
―
―
―
―
―
―
―
0.1
―
―
―
―
―
―
―
―
250
3
4.7
10
22
47
2.2
4.7
1.0
Max
100
500
1.52
0.71
0.33
0.15
0.145
0.138
―
―
―
―
―
―
0.3
2.0
2.4
3.0
5.0
1.1
1.3
1.5
0.8
―
6
6.11
13
28.6
61.1
2.86
6.11
1.1
―
kΩ
V
MHz
pF
V
V
―
mA
Unit
nA
0.0421 0.0468 0.0515
0.09
0.1
0.11
2
2010-05-19