Cache SRAM, 16KX4, 10ns, CMOS, CDIP28, DIP-28
参数名称 | 属性值 |
厂商名称 | IDT (Integrated Device Technology) |
零件包装代码 | DIP |
包装说明 | DIP, |
针数 | 28 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
最长访问时间 | 10 ns |
JESD-30 代码 | R-GDIP-T28 |
JESD-609代码 | e0 |
内存密度 | 65536 bit |
内存集成电路类型 | CACHE SRAM |
内存宽度 | 4 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 28 |
字数 | 16384 words |
字数代码 | 16000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 16KX4 |
输出特性 | 3-STATE |
可输出 | YES |
封装主体材料 | CERAMIC, GLASS-SEALED |
封装代码 | DIP |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
并行/串行 | PARALLEL |
认证状态 | Not Qualified |
标称供电电压 (Vsup) | 5 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子面层 | TIN LEAD |
端子形式 | THROUGH-HOLE |
端子位置 | DUAL |
IDT61594S25D | IDT61594S30CB | IDT61594L25P | IDT61594S25C | IDT61594L30CB | IDT61594L30DB | IDT61594S30DB | IDT61594L25D | IDT61594S25P | IDT61594L25C | |
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描述 | Cache SRAM, 16KX4, 10ns, CMOS, CDIP28, DIP-28 | Cache SRAM, 16KX4, 13ns, CMOS, CDIP28, DIP-28 | Cache SRAM, 16KX4, 10ns, CMOS, PDIP28, DIP-28 | Cache SRAM, 16KX4, 10ns, CMOS, CDIP28, DIP-28 | Cache SRAM, 16KX4, 13ns, CMOS, CDIP28, DIP-28 | Cache SRAM, 16KX4, 13ns, CMOS, CDIP28, DIP-28 | Cache SRAM, 16KX4, 13ns, CMOS, CDIP28, DIP-28 | Cache SRAM, 16KX4, 10ns, CMOS, CDIP28, DIP-28 | Cache SRAM, 16KX4, 10ns, CMOS, PDIP28, DIP-28 | Cache SRAM, 16KX4, 10ns, CMOS, CDIP28, DIP-28 |
零件包装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
包装说明 | DIP, | DIP, | DIP, | DIP, | DIP, | DIP, | DIP, | DIP, | DIP, | DIP, |
针数 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | 3A001.A.2.C | EAR99 | EAR99 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | EAR99 | EAR99 | EAR99 |
最长访问时间 | 10 ns | 13 ns | 10 ns | 10 ns | 13 ns | 13 ns | 13 ns | 10 ns | 10 ns | 10 ns |
JESD-30 代码 | R-GDIP-T28 | R-CDIP-T28 | R-PDIP-T28 | R-CDIP-T28 | R-CDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-PDIP-T28 | R-CDIP-T28 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
内存密度 | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
内存集成电路类型 | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM |
内存宽度 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
字数 | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words |
字数代码 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 70 °C | 125 °C | 70 °C | 70 °C | 125 °C | 125 °C | 125 °C | 70 °C | 70 °C | 70 °C |
组织 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
可输出 | YES | YES | YES | YES | YES | YES | YES | YES | YES | YES |
封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED |
封装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | MILITARY | COMMERCIAL | COMMERCIAL | MILITARY | MILITARY | MILITARY | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
厂商名称 | IDT (Integrated Device Technology) | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
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