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MBRS10H45CTC00TUC

产品描述Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2
产品类别分立半导体    二极管   
文件大小331KB,共5页
制造商Fagor Electrónica
标准
下载文档 详细参数 全文预览

MBRS10H45CTC00TUC概述

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2

MBRS10H45CTC00TUC规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Fagor Electrónica
包装说明D2PAK-3/2
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS
应用EFFICIENCY
最小击穿电压45 V
外壳连接CATHODE
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.8 V
JEDEC-95代码TO-263AB
JESD-30 代码R-PSSO-G2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值正向电流120 A
元件数量2
相数1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
最大输出电流5 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
参考标准AEC-Q101
最大重复峰值反向电压45 V
最大反向电流100 µA
反向测试电压45 V
表面贴装YES
技术SCHOTTKY
端子面层Matte Tin (Sn)
端子形式GULL WING
端子位置SINGLE

文档预览

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MBRS10H45CTC ....... MBRS10H200CTC
10.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier
Voltage
45 to 200 V
Current
10.0 A
TO-263AB (D2PAK)
4
2
3
1
FEATURES
• Low leakage current
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High frequency operation
• High forward surge current capability
• Solder dip 260ºC, 10s
• AEC-Q101 qualified
• Component in accordance to RoHS 2011/65/EU
and WEEE 2002/96/EC
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260º C
MECHANICAL DATA
• Case
:
TO-263AB (D2PAK) molded plastic.
Epoxy meets UL 94V-0 flammability rating.
• Polarity
:
As marked
• Terminals
:
Matte tin plated leads, solderable per
MIL-STD-750 Method 2026, J-STD-002 and JESD22-B102.
Consumer grade, meets JESD 201 class 1A whisker test.
HE3 suffix for high reliability grade (AEC Q101 qualified),
meets JESD 201 class 2 whisker test.
CASE 4
PIN 2
PIN 1
PIN 3
TYPICAL APPLICATIONS
Used in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, dc-to-dc converters
or polarity protection application.
Maximun Ratings and Electrical Characteristics at 25°C
MBRS
10H45CTC
MBRS
MBRS
MBRS
MBRS
10H60CTC 10H100CTC 10H150CTC 10H200CTC
MBRS10H200CTC
Marking Code
V
RRM
V
RMS
V
DC
I
F (AV)
I
FSM
I
RRM
T
j
T
stg
Maximum Recurrent Peak Reverse Voltage (V)
Maximum RMS Voltage (V)
Maximum DC Blocking Voltage (V)
Maximum Average Forward Rectified Current
at T
C
=133°C
Peak Forward Surge Current, 8.3 ms Single Half
sine-wave Superimposed on Rated Load
(JEDEC Method)
Peak Repetitive Reverse Surge Current
Operating Junction Temperature Range
Storage Temperature Range
MBRS10H45CTC MBRS10H60CTC MBRS100H100CTC MBRS10H150CTC
45
31
45
60
42
60
100
70
100
10 A
120 A
150
105
150
200
140
200
1.0 A
0.5 A
– 65 to + 175 °C
– 65 to + 175 °C
Electrical Characteristics at Tamb = 25 °C
V
F
Maximum Instantaneous Forward Voltage at
(Note 1)
I
F
= 5 A, Tj = 25 °C
I
F
= 5 A, Tj = 125 °C
I
F
= 10 A, Tj = 25 °C
I
F
= 10 A, Tj = 125 °C
Max. Instantaneous Reverse Current @ Tj=25°C
at Rated DC Blocking Voltage
(Note 3)
@ Tj=125°C
Typical Thermal Resistance
(Note 2)
0.70 V
0.85 V
0.57 V
0.65 V
0.80 V
0.90 V
0.67 V
0.75 V
100 µA
12 mA
2.0 °C/W
0.85 V
0.75 V
0.95 V
0.85 V
0.88 V
0.75 V
0.97 V
0.85 V
10.0 µA
2.0 mA
3.5 °C/W
I
R
R
thj-c
Notes: 1. Pulse Test: 300µ Pulse Width, 1% Duty Cycle
2. Thermal Resistance from Junction to Case per diode
3. Pulse test: Pulse width
£
40ms
www.fagorelectronica.com
Document Name: mbrs10hctc
Version: Jul-12
Page Number: 1/5

 
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