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F10E6N-4071

产品描述Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3
产品类别分立半导体    晶体管   
文件大小121KB,共2页
制造商SHINDENGEN
官网地址https://www.shindengen.com
下载文档 详细参数 选型对比 全文预览

F10E6N-4071概述

Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3

F10E6N-4071规格参数

参数名称属性值
厂商名称SHINDENGEN
包装说明SMALL OUTLINE, R-PSSO-G2
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
外壳连接DRAIN
配置SINGLE
最小漏源击穿电压60 V
最大漏极电流 (ID)10 A
最大漏源导通电阻0.1 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JESD-30 代码R-PSSO-G2
元件数量1
端子数量2
工作模式ENHANCEMENT MODE
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型N-CHANNEL
最大脉冲漏极电流 (IDM)40 A
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置SINGLE
晶体管元件材料SILICON

F10E6N-4071相似产品对比

F10E6N-4071 2SK2281-4071 2SK2281-4061 2SK2281-4101 F10E6N-4100 F10E6N-4061 F10E6N-4101
描述 Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3
包装说明 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
针数 3 3 3 3 3 3 3
Reach Compliance Code unknown unknow unknow unknow unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
外壳连接 DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小漏源击穿电压 60 V 60 V 60 V 60 V 60 V 60 V 60 V
最大漏极电流 (ID) 10 A 10 A 10 A 10 A 10 A 10 A 10 A
最大漏源导通电阻 0.1 Ω 0.1 Ω 0.1 Ω 0.1 Ω 0.1 Ω 0.1 Ω 0.1 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
元件数量 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
最大脉冲漏极电流 (IDM) 40 A 40 A 40 A 40 A 40 A 40 A 40 A
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
厂商名称 SHINDENGEN - - - SHINDENGEN SHINDENGEN SHINDENGEN
Base Number Matches - 1 1 1 1 - -

 
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