NTE338F
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a
power linear amplifier from 2 to 30MHz.
Features:
D
Specified 12.5V, 30MHz Characteristics:
Output Power = 20W (PEP)
Minimum Gain = 12dB
Efficiency = 45%
D
Intermodulation Distortion @ 20W (PEP):
IMD = –30dB Min
D
100% Tested for Load Mismatched at all Phase Angle with 30:1 VSWR
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Withstand Current (t = 5s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Total Device Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.46W/°C
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2°C/W
Electrical Characteristics:
(T
C
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 50mA, I
B
= 0
V
(BR)CES
I
C
= 50mA, V
BE
= 0
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V
(BR)CBO
I
C
= 50mA, I
E
= 0
V
(BR)EBO
I
E
= 1mA, I
C
= 0
I
CES
V
CE
= 12.5V, V
BE
= 0
20
40
40
4
–
–
–
–
–
–
–
–
–
–
5
V
V
V
V
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
Electrical Characteristics (Cont’d):
(T
C
= +25°C unless otherwise specified)
Parameter
ON Characteristics
DC Current Gain
Dynamic Characteristics
Output Capacitance
C
ob
G
PE
P
out
V
CB
= 12.5V, I
E
= 0, f = 1MHz
P
out
= 20W (PEP), I
C
max = 1.75A,
I
CQ
= 25mA, f = 30, 30.001MHz
V
CE
= 12.5V, f = 30MHz
P
out
= 20W (PEP), I
C
max = 1.75A,
I
CQ
= 25mA, f = 30, 30.001MHz
V
CE
= 12.5V, P
out
= 20W (PEP),
I
C
max = 1.75A, I
CQ
= 25mA,
f = 30, 30.001MHz
P
out
= 20W (PEP), I
C
max = 1.75A,
I
CQ
= 25mA, f = 30, 30.001MHz
–
15
200
pF
h
FE
I
C
= 1A, V
CE
= 5V
10
35
–
Symbol
Test Conditions
Min
Typ
Max
Unit
Functional Tests
(V
CC
= 12.5V unless otherwise specified)
Common–Emitter Amplifier
Power Gain
Power Output
Collector Efficiency
Intermodulation Distortion
12
20
45
–
15
–
–
–35
–
–
–
–30
dB
W
%
dB
η
IMD
Load Mismatch
> 30:1 All Phase Angles
.725 (18.42)
.122 (3.1) Dia
(2 Holes)
C
E
.250
(6.35)
B
.225 (5.72)
E
.860 (21.84)
.378 (9.56) Dia
.005 (0.15)
.255
(6.5)
.185 (4.7)
.975 (24.77)
.085 (2.14)
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