LSB20N60/LSC20N60/LSD20N60/LSE20N60
LonFET
Lonten N-channel 600V, 20A, 0.15Ω LonFET
TM
Power MOSFET
Description
LonFET
TM
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
650V
0.15Ω
60A
65nC
Power MOSFET is fabricated using
advanced super junction technology. The resulting
device has extremely low on resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
Features
Ultra-fast body diode
Ultra low R
DS(on)
Ultra low gate charge (typ. Q
g
= 65nC)
100% UIS tested
RoHS compliant
G
D
Applications
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
N-Channel MOSFET
Pb
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25° )
C
( T
C
= 100° )
C
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Avalanche energy, repetitive
1)
Avalanche current, repetitive
1)
Power Dissipation
( T
C
= 25° )
C
- Derate above 25°
C
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
I
DM
V
GSS
E
AS
E
AR
I
AR
P
D
V
DSS
I
D
Symbol
Value
600
20
13
60
±30
700
20.5
20
205
1.64
-55 to +150
20
60
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°
C
°
C
A
A
Version 1.1
2016
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LSB20N60/LSC20N60/LSD20N60/LSE20N60
LonFET
Thermal Characteristics TO-247/TO-220/TO-263
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
θJC
R
θJA
Symbol
Value
0.61
60
Unit
°
C/W
°
C/W
Thermal Characteristics TO-220F
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
θJC
R
θJA
Symbol
Value
3.7
80
Unit
°
C/W
°
C/W
Package Marking and Ordering Information
Device
LSB20N60
LSC20N60
LSD20N60
LSE20N60
Device Package
TO-247
TO-220
TO-220F
TO-263
Marking
LSB20N60
LSC20N60
LSD20N60
LSE20N60
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
T
c
= 25° unless otherwise noted
C
Symbol
Test Condition
Min.
Typ.
Max.
Unit
BV
DSS
V
GS(th)
I
DSS
I
GSSF
I
GSSR
R
DS(on)
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25mA
V
DS
=600 V, V
GS
=0 V,
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
V
GS
=10 V, I
D
=10 A
T
j
= 25°
C
T
j
= 150°
C
600
2.5
-
-
-
-
-
-
-
-
3.5
-
-
-
-
4.5
1
100
-100
V
V
μA
nA
nA
0.13
0.39
1.8
0.15
-
-
Ω
Gate resistance
R
G
f=1 MHz, open drain
Ω
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 380V, I
D
= 10A
R
G
= 4.7Ω, V
GS
=10V
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
-
-
-
-
-
-
-
2100
1700
17
25
21
60
4
-
-
-
-
-
-
-
ns
pF
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=480 V, I
D
=10A,
V
GS
=0 to 10 V
-
-
-
-
12
31
65
5.7
-
-
-
-
V
nC
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2016
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LSB20N60/LSC20N60/LSD20N60/LSE20N60
LonFET
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V, I
F
=10A
V
R
=50 V, I
F
=20A,
dI
F
/dt=100 A/μs
-
-
-
-
-
270
2.3
16
1.4
-
-
-
V
ns
μC
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
AS
= 7A, V
DD
= 60V, R
G
= 25Ω, Starting T
J
= 25°
C
Electrical Characteristics Diagrams
Figure 1. On-Region Characteristics
60
Common Source
T
c
= 25°C
Pulse test
V
GS
=10V
Figure 2. Transfer Characteristics
50
Common Source
T
c
= 25°C
V
DS
=20 V
Pulse test
50
V
GS
=8V
40
Drain current I
D
(A)
40
Drain current I
D
(A)
15
V
GS
=7V
30
30
V
GS
=6V
20
20
V
GS
=5.5
10
10
0
0
3
6
9
12
0
0
2
4
6
8
10
Drain−source voltage V
DS
(V)
Gate−source voltage V
GS
Figure 3. On-Resistance Variation vs. Drain Current
0.4
Figure 4. Threshold Voltage vs. Temperature
4.5
4.0
Gate threshold voltage V (V)
th
0.3
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I =0.25 mA
DS
DS (on)
(Ω)
0.2
V
= 10,15V
R
GS
0.1
T = 25°
C
c
Pulse test
Pulse test
0.0
0.1
1
10
D
100
-80
-40
0
40
80
j
120
160
Drain current I (A)
Junction temperature T (°
C)
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2016
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LonFET
Figure 5. Breakdown Voltage vs. Temperature
1.2
Figure 6. On-Resistance vs. Temperature
3.0
Drain-Source Breakdown Voltage
Drain-Source On-Resistance
1.1
2.5
2.0
1.5
1.0
0.5
0.0
V =10 V
GS
, (Normalized)
1.0
BV
0.8
V =0 V
GS
I =0.25 mA
DS
R
DS(on)
DSS
0.9
, (Normalized)
I =10 A
DS
Pulse test
0.7
-80
-40
0
40
80
j
Pulse test
120
160
-80
-40
0
40
80
j
120
160
Junction temperature T (°
C)
Junction temperature T (°
C)
Figure 7. Capacitance Characteristics
100000
C
C
C
oss
iss
oss
rss
Figure 8. Gate Charge Characteristics
10
= C + C (C = shorted)
gs
gd
ds
=C +C
ds
gd
10000
(V)
GS
C
=C
gd
8
V
DS
=120V
V
DS
=480V
C
1000
iss
Gate-Source Voltage V
Capacitance (pF)
6
100
C
rss
4
I
D
= 10A
10
Notes:
f = 1 MHz
V =0 V
GS
2
1
0.1
1
10
DS
0
0
10
20
30
40
G
50
60
70
Drain-Source Voltage V
(V)
Total Gate Charge Q (nC)
Figure 9. Maximum Safe Operating Area
100
10us
1ms
DC
100us
Figure 10. Power Dissipation vs. Temperature
250
Drain power dissipation P (W)
1000
Limited by R
DS(on)
10
Drain current I
D
(A)
D
200
150
1
100
0.1
Notes:
T
c
= 25°C
T
j
= 150°C
Single Pulse
50
0.01
1
10
100
0
0
40
80
c
120
160
Drain-Source Voltage V
DS
(V)
Case temperature T (°
C)
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2016
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LSB20N60/LSC20N60/LSD20N60/LSE20N60
LonFET
Figure 11. Transient Thermal Response Curve
1.E+01
In descending order
D=0.7, 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Normalized Transient
Thermal Resistance
1.E+00
1.E-01
P
DM
t
1.E-02
Z
Duty = t/T
T
Z (t)=0.61°C/W Max.
θJC
θJC
1.E-03
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Pulse Width t (s)
Version 1.1
2016
5
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stm32/stm8
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