DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
参数名称 | 属性值 |
是否无铅 | 不含铅 |
是否Rohs认证 | 符合 |
厂商名称 | SK Hynix(海力士) |
零件包装代码 | TSOP2 |
包装说明 | TSSOP, TSSOP66,.46 |
针数 | 66 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
访问模式 | FOUR BANK PAGE BURST |
最长访问时间 | 0.7 ns |
其他特性 | AUTO/SELF REFRESH |
最大时钟频率 (fCLK) | 200 MHz |
I/O 类型 | COMMON |
交错的突发长度 | 2,4,8 |
JESD-30 代码 | R-PDSO-G66 |
JESD-609代码 | e6 |
长度 | 22.225 mm |
内存密度 | 268435456 bit |
内存集成电路类型 | DDR DRAM |
内存宽度 | 8 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 66 |
字数 | 33554432 words |
字数代码 | 32000000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 32MX8 |
输出特性 | 3-STATE |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | TSSOP |
封装等效代码 | TSSOP66,.46 |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
峰值回流温度(摄氏度) | 260 |
电源 | 2.6 V |
认证状态 | Not Qualified |
刷新周期 | 8192 |
座面最大高度 | 1.194 mm |
自我刷新 | YES |
连续突发长度 | 2,4,8 |
最大待机电流 | 0.01 A |
最大压摆率 | 0.25 mA |
最大供电电压 (Vsup) | 2.7 V |
最小供电电压 (Vsup) | 2.5 V |
标称供电电压 (Vsup) | 2.6 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子面层 | Tin/Bismuth (Sn/Bi) |
端子形式 | GULL WING |
端子节距 | 0.65 mm |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | 20 |
宽度 | 10.16 mm |
HY5DU56822DLTP-D43 | HY5DU561622DLTP-D43 | HY5DU561622DTP-H | HY5DU561622DLTP-K | HY5DU561622DLTP-H | HY5DU56822DTP-D43 | HY5DU56422DLTP-D43 | HY5DU561622DTP-D43 | HY5DU56422DTP-D43 | |
---|---|---|---|---|---|---|---|---|---|
描述 | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 | DDR DRAM, 64MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 | DDR DRAM, 64MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
零件包装代码 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 |
包装说明 | TSSOP, TSSOP66,.46 | TSSOP, TSSOP66,.46 | TSSOP, TSSOP66,.46 | TSSOP, TSSOP66,.46 | TSSOP, TSSOP66,.46 | TSSOP, TSSOP66,.46 | TSSOP, TSSOP66,.46 | TSSOP, TSSOP66,.46 | TSSOP, TSSOP66,.46 |
针数 | 66 | 66 | 66 | 66 | 66 | 66 | 66 | 66 | 66 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | compliant | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
最长访问时间 | 0.7 ns | 0.7 ns | 0.75 ns | 0.75 ns | 0.75 ns | 0.7 ns | 0.7 ns | 0.7 ns | 0.7 ns |
其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
最大时钟频率 (fCLK) | 200 MHz | 200 MHz | 133 MHz | 133 MHz | 133 MHz | 200 MHz | 200 MHz | 200 MHz | 200 MHz |
I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
交错的突发长度 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 |
JESD-30 代码 | R-PDSO-G66 | R-PDSO-G66 | R-PDSO-G66 | R-PDSO-G66 | R-PDSO-G66 | R-PDSO-G66 | R-PDSO-G66 | R-PDSO-G66 | R-PDSO-G66 |
JESD-609代码 | e6 | e6 | e6 | e6 | e6 | e6 | e6 | e6 | e6 |
长度 | 22.225 mm | 22.225 mm | 22.225 mm | 22.225 mm | 22.225 mm | 22.225 mm | 22.225 mm | 22.225 mm | 22.225 mm |
内存密度 | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit |
内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
内存宽度 | 8 | 16 | 16 | 16 | 16 | 8 | 4 | 16 | 4 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 66 | 66 | 66 | 66 | 66 | 66 | 66 | 66 | 66 |
字数 | 33554432 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 33554432 words | 67108864 words | 16777216 words | 67108864 words |
字数代码 | 32000000 | 16000000 | 16000000 | 16000000 | 16000000 | 32000000 | 64000000 | 16000000 | 64000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
组织 | 32MX8 | 16MX16 | 16MX16 | 16MX16 | 16MX16 | 32MX8 | 64MX4 | 16MX16 | 64MX4 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | TSSOP | TSSOP | TSSOP | TSSOP | TSSOP | TSSOP | TSSOP | TSSOP | TSSOP |
封装等效代码 | TSSOP66,.46 | TSSOP66,.46 | TSSOP66,.46 | TSSOP66,.46 | TSSOP66,.46 | TSSOP66,.46 | TSSOP66,.46 | TSSOP66,.46 | TSSOP66,.46 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
峰值回流温度(摄氏度) | 260 | 260 | 260 | 260 | 260 | NOT SPECIFIED | 260 | NOT SPECIFIED | NOT SPECIFIED |
电源 | 2.6 V | 2.6 V | 2.5 V | 2.5 V | 2.5 V | 2.6 V | 2.6 V | 2.6 V | 2.6 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
刷新周期 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 |
座面最大高度 | 1.194 mm | 1.194 mm | 1.194 mm | 1.194 mm | 1.194 mm | 1.194 mm | 1.194 mm | 1.194 mm | 1.194 mm |
自我刷新 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
连续突发长度 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 |
最大待机电流 | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A |
最大压摆率 | 0.25 mA | 0.25 mA | 0.22 mA | 0.22 mA | 0.22 mA | 0.25 mA | 0.25 mA | 0.25 mA | 0.25 mA |
最大供电电压 (Vsup) | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V |
最小供电电压 (Vsup) | 2.5 V | 2.5 V | 2.3 V | 2.3 V | 2.3 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
标称供电电压 (Vsup) | 2.6 V | 2.6 V | 2.5 V | 2.5 V | 2.5 V | 2.6 V | 2.6 V | 2.6 V | 2.6 V |
表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子节距 | 0.65 mm | 0.65 mm | 0.65 mm | 0.65 mm | 0.65 mm | 0.65 mm | 0.65 mm | 0.65 mm | 0.65 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
处于峰值回流温度下的最长时间 | 20 | 20 | 20 | 20 | 20 | NOT SPECIFIED | 20 | NOT SPECIFIED | NOT SPECIFIED |
宽度 | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm |
厂商名称 | SK Hynix(海力士) | - | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) |
端子面层 | Tin/Bismuth (Sn/Bi) | Tin/Bismuth (Sn/Bi) | Tin/Bismuth (Sn/Bi) | Tin/Bismuth (Sn/Bi) | Tin/Bismuth (Sn/Bi) | - | Tin/Bismuth (Sn/Bi) | - | - |
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