电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

GT28F160B3TA90

产品描述Flash, 1MX16, 90ns, PBGA48, MICRO, BGA-48
产品类别存储    存储   
文件大小1MB,共71页
制造商Numonyx ( Micron )
官网地址https://www.micron.com
下载文档 详细参数 全文预览

GT28F160B3TA90概述

Flash, 1MX16, 90ns, PBGA48, MICRO, BGA-48

GT28F160B3TA90规格参数

参数名称属性值
厂商名称Numonyx ( Micron )
零件包装代码BGA
包装说明MICRO, BGA-48
针数48
Reach Compliance Codeunknown
ECCN代码EAR99
最长访问时间90 ns
其他特性TOP BOOT BLOCK
启动块TOP
JESD-30 代码R-PBGA-B48
长度7.286 mm
内存密度16777216 bit
内存集成电路类型FLASH
内存宽度16
功能数量1
端子数量48
字数1048576 words
字数代码1000000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织1MX16
封装主体材料PLASTIC/EPOXY
封装代码VFBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行PARALLEL
峰值回流温度(摄氏度)240
编程电压2.7 V
认证状态Not Qualified
座面最大高度1 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式BALL
端子节距0.75 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
类型NOR TYPE
宽度6.964 mm

文档预览

下载PDF文档
Intel
®
Advanced Boot Block Flash
Memory (B3)
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Datasheet
Product Features
Flexible SmartVoltage Technology
— 2.7 V – 3.6 V read/program/erase
— 12 V V
PP
fast production programming
Intel
®
Flash Data Integrator Software
—Flash Memory Manager
—System Interrupt Manager
—Supports parameter storage, streaming
data (for example, voice)
1.65 V – .5 V or 2.7 V – 3.6 V I/O option
— Reduces overall system power
High Performance
— 2.7 V – 3.6 V: 70 ns max access time
Extended Cycling Capability
—Minimum 100,000 block erase cycles
Optimized Block Sizes
— Eight 8-KB blocks for data, top or
bottom locations
— Up to 127 x 64-KB blocks for code
Automatic Power Savings Feature
—Typical I
CCS
after bus inactivity
Standard Surface Mount Packaging
—48-Ball CSP packages
—40-Lead and 48-Lead TSOP packages
Block Locking
— V
CC
-level control through Write Protect
WP#
Density and Footprint Upgradeable for
common package
—8-, 16-, 32-, and 64-Mbit densities
Low Power Consumption
— 9 mA typical read current
ETOX™ VIII (0.13
µm)
Flash
Technology
—16-Mbit and 32-Mbit densities
Absolute Hardware-Protection
— V
PP
= GND option
— V
CC
lockout voltage
ETOX™ VII (0.18
µm)
Flash Technology
—16-, 32-, and 64-Mbit densities
Extended Temperature Operation
— –40 °C to +85 °C
ETOX ™ VI (0.25µm) Flash Technology
—8-, 16-, and 32-Mbit densities
Automated Program and Block Erase
— Status registers
Bo not use the x8 option for new designs
The Intel
®
Advanced Boot Block Flash Memory (B3) device, manufactured on the Intel 0.13
µm
and 0.18
µm
technologies, is a feature-rich solution at a low system cost. The B3 device in x16 is
available in 48-lead TSOP and 48-ball CSP packages. The x8 option of this product family is
available only in 40-lead TSOP and 48-ball µBGA* packages. For additional information about
this product family, see the Intel website:
http://www.intel.com/design/flash.
Notice:
This specification is subject to change without notice. Verify with your local Intel sales
office that you have the latest datasheet before finalizing a design.
Order Number: 290580, Revision: 020
18 Aug 2005

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 351  2101  480  2121  253  8  43  10  6  4 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved