d. Maximum under steady state conditions is 90 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 50 A.
Document Number: 73780
S11-0212-Rev. B, 14-Feb-11
www.vishay.com
1
SUD50N03-7m3P
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 28 A
V
GS
= 4.5 V, I
D
= 26 A
V
DS
= 15 V, I
D
= 28 A
Min.
30
Typ.
Max.
Unit
V
27
- 4.7
0.75
1.7
± 100
1
10
50
0.006
0.0069
98
2170
0.0073
0.0087
mV/°C
V
nA
µA
A
Ω
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 28 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 28 A
f = 1 MHz
V
DD
= 15 V, R
L
= 0.682
Ω
I
D
≅
20 A, V
GEN
= 4.5 V, R
g
= 1
Ω
410
141
34
15.7
6
2.2
1.3
13
12
19
7
5.5
1.95
20
18
29
11
8.25
13.5
33
13
50
120
0.9
24.5
17.2
13.3
11.2
1.5
37
26
51
24
pF
nC
Ω
ns
V
DD
= 15 V, R
L
= 0.625
Ω
I
D
≅
24 A, V
GEN
= 10 V, R
g
= 1
Ω
9
22
8.5
T
C
= 25 °C
I
S
= 24 A
A
V
ns
nC
ns
I
F
= 20 A, dI/dt = 100 A/µs, T
J
= 25 °C
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73780
S11-0212-Rev. B, 14-Feb-11
SUD50N03-7m3P
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
150
V
GS
= 10 thru 4
V
120
I
D
- Drain C
u
rrent (A)
I
D
- Drain C
u
rrent (A)
V
GS
= 3
V
90
0.9
1.2
0.6
T
C
= 25 °C
60
0.3
30
V
GS
= 2
V
0
0
1
2
3
4
5
0.0
0.0
T
C
= - 55 °C
0.6
1.2
1.8
2.4
T
C
= 125 °C
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
140
120
T
C
= 25 °C
100
G
fs
(S)
80
60
40
20
0
0
6
12
18
24
30
T
C
= 125 °C
R
DS(on)
- Drain-to-So
u
rce On-Resistance (Ω)
T
C
= - 55 °C
0.008
Transfer Characteristics
0.007
V
GS
= 4.5
V
0.006
V
GS
= 10
V
0.005
0.004
0
10
20
30
40
50
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
2500
C
iss
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
10
R
DS(on)
vs. Drain Current
I
D
= 28 A
8
2000
C - Capacitance (pF)
V
DS
= 15
V
V
DS
= 24
V
1500
6
1000
C
oss
500
C
rss
0
0
6
12
18
24
30
4
2
0
0
8
16
24
32
40
V
DS
- Drain-to-Source
Voltage
(V)
Q
g
- Total Gate Charge (nC)
Capacitance
Document Number: 73780
S11-0212-Rev. B, 14-Feb-11
Gate Charge
www.vishay.com
3
SUD50N03-7m3P
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.8
I
D
= 20 A
1.6
R
DS(on)
- On-Resistance
V
GS
= 4.5
V
I
S
- So
u
rce C
u
rrent (A)
10
100
1.4
(
N
ormalized)
V
GS
= 10
V
T
J
= 150 °C
1
1.2
T
J
= 25 °C
1.0
0.1
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
175
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain
Voltage
(V)
On-Resistance vs. Junction Temperature
0.020
I
D
= 20 A
1.6
R
DS(on)
- On-Resistance (Ω)
0.015
1.4
V
GS(th)
(
V
)
1.8
Forward Diode Voltage vs. Temperature
I
D
= 250
µA
0.010
T
A
= 125 °C
1.2
1.0
0.005
T
A
= 25 °C
0.8
0.000
0
2
4
6
8
10
0.6
- 50
- 25
0
25
50
75
100
125
150
175
V
GS
- Gate-to-Source
Voltage
(V)
T
J
- Temperature (°C)
R
DS(on)
vs. V
GS
vs. Temperature
720
100
Threshold Voltage
600
I
D
- Drain C
u
rrent (A)
10
Limited
by
R
DS(on)
*
1
10 ms
100 ms
1s
10 s
DC
480
Po
w
er (
W
)
T
A
= 25 °C
360
0.1
BVDSS Limited
0.01
240
120
T
A
= 25 °C
Single Pulse
0.01
0.1
1
Time (s)
10
100
1000
0.001
0.1
*
V
GS
1
100
10
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
0
0.001
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 73780
S11-0212-Rev. B, 14-Feb-11
SUD50N03-7m3P
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
90
75
60
I
D
- Drain C
u
rrent (A)
60
Po
w
er (W)
40
Package Limited
45
30
20
15
0
0
25
50
75
100
125
150
175
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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