Standard SRAM, 128KX24, 15ns, CMOS, PQFP100
参数名称 | 属性值 |
厂商名称 | Integrated Silicon Solution ( ISSI ) |
包装说明 | QFP, |
Reach Compliance Code | unknown |
ECCN代码 | 3A991.B.2.A |
最长访问时间 | 15 ns |
JESD-30 代码 | R-PQFP-G100 |
内存密度 | 3145728 bit |
内存集成电路类型 | STANDARD SRAM |
内存宽度 | 24 |
功能数量 | 1 |
端子数量 | 100 |
字数 | 131072 words |
字数代码 | 128000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 128KX24 |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | QFP |
封装形状 | RECTANGULAR |
封装形式 | FLATPACK |
并行/串行 | PARALLEL |
认证状态 | Not Qualified |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子形式 | GULL WING |
端子位置 | QUAD |
AP9A116-15QC | AP9A116L-12BC | AP9A116-12BC | AP9A116L-15BC | AP9A116L-12QC | AP9A116L-15QC | AP9A116-12QC | AP9A116-15BC | |
---|---|---|---|---|---|---|---|---|
描述 | Standard SRAM, 128KX24, 15ns, CMOS, PQFP100 | Standard SRAM, 128KX24, 12ns, CMOS, PBGA119 | Standard SRAM, 128KX24, 12ns, CMOS, PBGA119 | Standard SRAM, 128KX24, 15ns, CMOS, PBGA119 | Standard SRAM, 128KX24, 12ns, CMOS, PQFP100 | Standard SRAM, 128KX24, 15ns, CMOS, PQFP100 | Standard SRAM, 128KX24, 12ns, CMOS, PQFP100 | Standard SRAM, 128KX24, 15ns, CMOS, PBGA119 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknow |
ECCN代码 | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
最长访问时间 | 15 ns | 12 ns | 12 ns | 15 ns | 12 ns | 15 ns | 12 ns | 15 ns |
JESD-30 代码 | R-PQFP-G100 | R-PBGA-B119 | R-PBGA-B119 | R-PBGA-B119 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 | R-PBGA-B119 |
内存密度 | 3145728 bit | 3145728 bit | 3145728 bit | 3145728 bit | 3145728 bit | 3145728 bit | 3145728 bit | 3145728 bi |
内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
内存宽度 | 24 | 24 | 24 | 24 | 24 | 24 | 24 | 24 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 100 | 119 | 119 | 119 | 100 | 100 | 100 | 119 |
字数 | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words |
字数代码 | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
组织 | 128KX24 | 128KX24 | 128KX24 | 128KX24 | 128KX24 | 128KX24 | 128KX24 | 128KX24 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLATPACK | GRID ARRAY | GRID ARRAY | GRID ARRAY | FLATPACK | FLATPACK | FLATPACK | GRID ARRAY |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子形式 | GULL WING | BALL | BALL | BALL | GULL WING | GULL WING | GULL WING | BALL |
端子位置 | QUAD | BOTTOM | BOTTOM | BOTTOM | QUAD | QUAD | QUAD | BOTTOM |
厂商名称 | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | - | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) |
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