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W19B320BTB-M

产品描述Flash, 2MX16, 70ns, PBGA48, 6X 8 MM, TFBGA-48
产品类别存储    存储   
文件大小650KB,共56页
制造商Winbond(华邦电子)
官网地址http://www.winbond.com.tw
标准
下载文档 详细参数 选型对比 全文预览

W19B320BTB-M概述

Flash, 2MX16, 70ns, PBGA48, 6X 8 MM, TFBGA-48

W19B320BTB-M规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Winbond(华邦电子)
零件包装代码BGA
包装说明TFBGA, BGA48,6X8,32
针数48
Reach Compliance Codecompliant
ECCN代码3A991.B.1.A
最长访问时间70 ns
备用内存宽度8
启动块TOP
命令用户界面YES
通用闪存接口YES
数据轮询YES
JESD-30 代码R-PBGA-B48
长度8 mm
内存密度33554432 bit
内存集成电路类型FLASH
内存宽度16
功能数量1
部门数/规模8,63
端子数量48
字数2097152 words
字数代码2000000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织2MX16
封装主体材料PLASTIC/EPOXY
封装代码TFBGA
封装等效代码BGA48,6X8,32
封装形状RECTANGULAR
封装形式GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行PARALLEL
电源3/3.3 V
编程电压3 V
认证状态Not Qualified
就绪/忙碌YES
座面最大高度1.2 mm
部门规模8K,64K
最大待机电流0.000005 A
最大压摆率0.03 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
切换位YES
类型NOR TYPE
宽度6 mm

W19B320BTB-M文档预览

W19B320BT/B DATASHEET
Table of Contents-
1.
2.
3.
4.
5.
6.
GENERAL DESCRIPTION .............................................................................................................. 4
FEATURES ...................................................................................................................................... 5
PIN CONFIGURATIONS.................................................................................................................. 7
BLOCK DIAGRAM ........................................................................................................................... 8
PIN DESCRIPTION.......................................................................................................................... 8
FUNCTIONAL DESCRIPTION ........................................................................................................ 9
6.1
Device Bus Operation ............................................................................................................. 9
6.1.1
6.1.2
6.1.3
6.1.4
6.1.5
6.1.6
6.1.7
6.1.8
6.1.9
6.1.10
6.1.11
6.1.12
6.1.13
Word/Byte Configuration ..........................................................................................................9
Reading Array Data ..................................................................................................................9
Writing Commands/Command Sequences...............................................................................9
Standby Mode ........................................................................................................................10
Automatic Sleep Mode ...........................................................................................................10
#RESET: Hardware Reset Pin................................................................................................10
Output Disable Mode..............................................................................................................11
autoselect Mode .....................................................................................................................11
Sector/Sector Block Protection and Unprotection...................................................................11
Write Protect (#WP)................................................................................................................11
Temporary Sector Unprotect ..................................................................................................12
Security Sector Flash Memory Region ...................................................................................12
Hardware Data Protection ......................................................................................................13
Reading Array Data ................................................................................................................13
Reset Command.....................................................................................................................14
AUTOSELECT Command Sequence .....................................................................................14
Byte/Word Program Command Sequence..............................................................................15
Unlock Bypass Command Sequence .....................................................................................15
Chip Erase Command Sequence ...........................................................................................16
Sector Erase Command Sequence ........................................................................................16
Erase Suspend/Erase Resume Commands ...........................................................................17
DQ7: #Data Polling.................................................................................................................17
RY/#BY: Ready/#Busy ...........................................................................................................18
DQ6: Toggle Bit I ....................................................................................................................18
DQ2: Toggle Bit II ...................................................................................................................19
Reading Toggle Bits DQ6/DQ2...............................................................................................19
DQ5: Exceeded Timing Limits ................................................................................................19
6.2
Command Definitions............................................................................................................ 13
6.2.1
6.2.2
6.2.3
6.2.4
6.2.5
6.2.6
6.2.7
6.2.8
6.3
Write Operation Status.......................................................................................................... 17
6.3.1
6.3.2
6.3.3
6.3.4
6.3.5
6.3.6
-1-
Publication Release Date: Dec. 25, 2007
Revision A3
W19B320BT/B DATASHEET
6.3.7
DQ3: Sector Erase Timer .......................................................................................................20
7.
TABLE OF OPERATION MODES ................................................................................................. 21
7.1
7.2
7.3
7.4
7.5
7.6
Device Bus Operations ......................................................................................................... 21
AUTOSELECT Codes (High Voltage Method) ..................................................................... 22
Sector Address Table (Top Boot Block) ............................................................................... 23
Sector Address Table (Bottom Boot Block) .......................................................................... 25
Top Boot Sector/Sector Block Address for Protection/Unprotection) ................................... 27
CFI Query Identification String.............................................................................................. 29
7.6.1
7.6.2
7.6.3
7.6.4
7.6.5
System Interface String ..........................................................................................................29
Device Geometry Definition ....................................................................................................30
Primary Vendor-Specific Extended Query ..............................................................................31
Command Definitions .............................................................................................................32
Write Operation Status ...........................................................................................................33
7.7
7.8
7.9
Temporary Sector Unprotect Algorithm ................................................................................ 33
In-System Sector Protect/Unprotect Algorithms ................................................................... 35
Security Sector Protect Verify ............................................................................................... 36
7.10 Program Algorithm ................................................................................................................ 36
7.11 Erase Algorithm..................................................................................................................... 37
7.12 Data Polling Algorithm........................................................................................................... 37
7.13 Toggle Bit Algorithm.............................................................................................................. 38
8.
ELECTRICAL CHARACTERISTICS.............................................................................................. 39
8.1
8.2
8.3
8.4
8.5
8.6
8.7
8.8
8.9
Absolute Maximum Ratings .................................................................................................. 39
Operating Ranges ................................................................................................................. 39
DC Characteristics ................................................................................................................ 40
CMOS Compatible ................................................................................................................ 40
AC Characteristics ................................................................................................................ 41
Test Condition ....................................................................................................................... 41
8.6.1
AC Test Load and Waveforms ...............................................................................................41
Read-Only Operations .......................................................................................................... 42
Hardware Reset (#RESET)................................................................................................... 42
Word/Byte Configuration (#BYTE) ........................................................................................ 42
8.10 Erase and Program Operation .............................................................................................. 43
8.11 Temporary Sector Unprotect................................................................................................. 43
8.12 Alternate #CE Controlled Erase and Program Operations ................................................... 44
9.
TIMING WAVEFORMS .................................................................................................................. 45
9.1
AC Read Waveform .............................................................................................................. 45
Publication Release Date:Dec.25, 2007
Revisionv A3
-2-
W19B320BT/B DATASHEET
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
Reset Waveform ................................................................................................................... 45
#BYTE Waveform for Read Operation.................................................................................. 46
#BYTE Waveform for Write Operation.................................................................................. 46
Programming Waveform ....................................................................................................... 47
Accelerated Programming Waveform ................................................................................... 47
Chip/Sector Erase Waveform ............................................................................................... 48
Back-to back Read/Write Cycle Waveform........................................................................... 48
#Data Polling Waveform (During Embedded Algorithms) .................................................... 49
9.10 Toggle Bit Waveform (During Embedded Algorithms).......................................................... 49
9.11 DQ 2 vs. DQ6 Waveform ...................................................................................................... 50
9.12 Temporary Sector Unprotect Timing Diagram ...................................................................... 50
9.13 Sector/Sector Block Protect and Unprotect Timing Diagram................................................ 50
9.14 Alternate #CE Controlled Write (Erase/Program) Operation Timing .................................... 51
10. LATCHUP CHARACTERISTICS ................................................................................................... 52
11. CAPACITANCE.............................................................................................................................. 52
12. ORDERING INFORMATION.......................................................................................................... 53
13. PACKAGE DIMENSIONS .............................................................................................................. 54
13.1 TFBGA48ball (6X8 mm^2, Ø=0.40mm) ................................................................................ 54
13.2 48-Pin Standard Thin Small Outline Package ...................................................................... 55
14. VERSION HISTORY ...................................................................................................................... 56
-3-
Publication Release Date:Dec. 25, 2007
Revisionv A3
W19B320BT/B DATASHEET
1. GENERAL DESCRIPTION
The W19B320BT/B is a 32Mbit, 2.7~3.6-volt single bank CMOS flash memory organized as 4M x 8 or
2M
×
16 bits. The word-wide (× 16) data appears on DQ15-DQ0, and byte-wide (x 8) data appears on
DQ7-DQ0. The device can be programmed and erased in-system with a standard 3.0-volt power
supply. A 12-volt V
PP
is not required. The unique cell architecture of the W19B320BT/B results in fast
program/erase operations with extremely low current consumption (compared to other comparable 3-
volt flash memory products). The device can also be programmed and erased by using standard
EPROM programmers.
-4-
Publication Release Date:Dec.25, 2007
Revisionv A3
W19B320BT/B DATASHEET
2. FEATURES
Performance
2.7~3.6-volt write (program and erase) operations
Fast write operation
Sector erases time: 0.4 Sec (typical)
Chip erases time: 30Sec (typical)
Byte/Word programming time: 7/9
 s
(typical)
Read access time: 70 ns
Typical program/erase cycles: 100K
Twenty-year data retention
Ultra low power consumption
Active current (Read): 10 mA (typical)
Active current (Read while Erase): 21 mA (typical)
Standby current: 0.2
μA
(typical)
Architecture
Sector erase architecture
Eight 8KB, and sixty-three 64KB sectors
Top or bottom boot block configurations available
Supports full chip erase
Security Sector Size: 256 Bytes
The Security Sector is an OTP; once the sector is programmed, it cannot be erased
JEDEC standard byte-wide and word-wide pinouts
Manufactured on WinStack 0.13μm process technology
Available packages: 48-pin TSOP and 48-ball TFBGA (6x8mm)
Software Features
Compatible with common Flash Memory Interface (CFI) specification
Flash device parameters stored directly on the device
Allows software driver to identify and use a variety of different current and future Flash products
Erase Suspend/Erase Resume
Suspends erase operations to allow programming in same bank
End of program detection
Software method: Toggle bit/Data polling
Unlock Bypass Program command
Reduces overall programming time when issuing multiple program command sequences
-5-
Publication Release Date:Dec. 25, 2007
Revisionv A3

W19B320BTB-M相似产品对比

W19B320BTB-M W19B320BTB-H W19B320BBB-H W19B320BTT-M W19B320BBB-M W19B320BBT-M W19B320BBT-H W19B320BTT-H
描述 Flash, 2MX16, 70ns, PBGA48, 6X 8 MM, TFBGA-48 2MX16 FLASH 3V PROM, 70ns, PBGA48, 6X 8 MM, TFBGA-48 2MX16 FLASH 3V PROM, 70ns, PBGA48, 6X 8 MM, TFBGA-48 Flash, 2MX16, 70ns, PDSO48, TSOP-48 Flash, 2MX16, 70ns, PBGA48, 6X 8 MM, TFBGA-48 Flash, 2MX16, 70ns, PDSO48, TSOP-48 2MX16 FLASH 3V PROM, 70ns, PDSO48, TSOP-48 2MX16 FLASH 3V PROM, 70ns, PDSO48, TSOP-48
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合
厂商名称 Winbond(华邦电子) Winbond(华邦电子) Winbond(华邦电子) Winbond(华邦电子) Winbond(华邦电子) Winbond(华邦电子) Winbond(华邦电子) Winbond(华邦电子)
零件包装代码 BGA BGA BGA TSOP BGA TSOP TSOP TSOP
包装说明 TFBGA, BGA48,6X8,32 TFBGA, BGA48,6X8,32 6X 8 MM, TFBGA-48 TSSOP, TSSOP48,.8,20 TFBGA, BGA48,6X8,32 TSSOP, TSSOP48,.8,20 TSOP-48 TSSOP, TSSOP48,.8,20
针数 48 48 48 48 48 48 48 48
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compli
最长访问时间 70 ns 70 ns 70 ns 70 ns 70 ns 70 ns 70 ns 70 ns
备用内存宽度 8 8 8 8 8 8 8 8
启动块 TOP TOP BOTTOM TOP BOTTOM BOTTOM BOTTOM TOP
命令用户界面 YES YES YES YES YES YES YES YES
通用闪存接口 YES YES YES YES YES YES YES YES
数据轮询 YES YES YES YES YES YES YES YES
JESD-30 代码 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48 R-PDSO-G48 R-PBGA-B48 R-PDSO-G48 R-PDSO-G48 R-PDSO-G48
长度 8 mm 8 mm 8 mm 18.4 mm 8 mm 18.4 mm 18.4 mm 18.4 mm
内存密度 33554432 bit 33554432 bit 33554432 bit 33554432 bit 33554432 bit 33554432 bit 33554432 bit 33554432 bi
内存集成电路类型 FLASH FLASH FLASH FLASH FLASH FLASH FLASH FLASH
内存宽度 16 16 16 16 16 16 16 16
功能数量 1 1 1 1 1 1 1 1
部门数/规模 8,63 8,63 8,63 8,63 8,63 8,63 8,63 8,63
端子数量 48 48 48 48 48 48 48 48
字数 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words
字数代码 2000000 2000000 2000000 2000000 2000000 2000000 2000000 2000000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
最低工作温度 -40 °C -20 °C -20 °C -40 °C -40 °C -40 °C -20 °C -20 °C
组织 2MX16 2MX16 2MX16 2MX16 2MX16 2MX16 2MX16 2MX16
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TFBGA TFBGA TFBGA TSSOP TFBGA TSSOP TSSOP TSSOP
封装等效代码 BGA48,6X8,32 BGA48,6X8,32 BGA48,6X8,32 TSSOP48,.8,20 BGA48,6X8,32 TSSOP48,.8,20 TSSOP48,.8,20 TSSOP48,.8,20
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH GRID ARRAY, THIN PROFILE, FINE PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
电源 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V
编程电压 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
就绪/忙碌 YES YES YES YES YES YES YES YES
座面最大高度 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
部门规模 8K,64K 8K,64K 8K,64K 8K,64K 8K,64K 8K,64K 8K,64K 8K,64K
最大待机电流 0.000005 A 0.000005 A 0.000005 A 0.000005 A 0.000005 A 0.000005 A 0.000005 A 0.000005 A
最大压摆率 0.03 mA 0.03 mA 0.03 mA 0.03 mA 0.03 mA 0.03 mA 0.03 mA 0.03 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
标称供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
表面贴装 YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL OTHER OTHER INDUSTRIAL INDUSTRIAL INDUSTRIAL OTHER OTHER
端子形式 BALL BALL BALL GULL WING BALL GULL WING GULL WING GULL WING
端子节距 0.8 mm 0.8 mm 0.8 mm 0.5 mm 0.8 mm 0.5 mm 0.5 mm 0.5 mm
端子位置 BOTTOM BOTTOM BOTTOM DUAL BOTTOM DUAL DUAL DUAL
切换位 YES YES YES YES YES YES YES YES
类型 NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE
宽度 6 mm 6 mm 6 mm 12 mm 6 mm 12 mm 12 mm 12 mm
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