Datasheet> 器件分类 > 存储> 存储> 5962-01-412-5953

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5962-01-412-5953: 产品描述EEPROM, 8KX8, 300ns, Parallel, CMOS, CQCC32,; 产品类别存储存储; 文件大小210KB，共29页; 制造商Xicor Inc

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5962-01-412-5953概述

EEPROM, 8KX8, 300ns, Parallel, CMOS, CQCC32,

5962-01-412-5953规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Xicor Inc
Reach Compliance Code	unknown
最长访问时间	300 ns
命令用户界面	NO
数据轮询	YES
耐久性	10000 Write/Erase Cycles
JESD-30 代码	R-XQCC-N32
内存密度	65536 bit
内存集成电路类型	EEPROM
内存宽度	8
端子数量	32
字数	8192 words
字数代码	8000
最高工作温度	125 °C
最低工作温度	-55 °C
组织	8KX8
封装主体材料	CERAMIC
封装代码	QCCN
封装等效代码	LCC32,.45X.55
封装形状	RECTANGULAR
封装形式	CHIP CARRIER
页面大小	64 words
并行/串行	PARALLEL
电源	5 V
认证状态	Not Qualified
筛选级别	38535Q/M;38534H;883B
最大待机电流	0.00025 A
最大压摆率	0.06 mA
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	MILITARY
端子形式	NO LEAD
端子节距	1.27 mm
端子位置	QUAD
切换位	YES
最长写入周期时间 (tWC)	10 ms

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NOTICE OF REVISION (NOR)

THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED.

1. DATE

(YYMMDD)

97-08-12

Form Approved

OMB No. 0704-0188

2. PROCURING

ACTIVITY NO.

3. DODAAC

6. NOR NO.

5962-R409-97

8. DOCUMENT NO.

Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewing instructions, searching existing data

sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden

estimate or any other aspect of this collection of information, including suggestions for reducing this burden, to Department of Defense, Washingtion

Headquarters Services, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the

Office of Management and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503.

PLEASE DO NOT RETURN YOUR COMPLETED FORM TO EITHER OF THESE ADDRESSED. RETURN COMPLETED FORM TO THE GOVERNMENT

ISSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIVITY NUMBER LISTED IN ITEM 2 OF THIS FORM.

4. ORIGINATOR

a. TYPED NAME

(First, Middle Initial,

Last)

b. ADDRESS

(Street, City, State, Zip Code)

Defense Supply Center Columbus

3990 East Broad Street

Columbus, OH 43216-5000

5. CAGE CODE

67268

7. CAGE CODE

67268

5962-87514

11. ECP NO.

9. TITLE OF DOCUMENT

MICROCIRCUITS, MEMORY, DIGITAL, CMOS,

8K X 8-BIT EEPROM, MONOLITHIC SILICON

10. REVISION LETTER

a. CURRENT

b. NEW

N/A

12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIES

All

13. DESCRIPTION OF REVISION

Sheet 1:

Revisions ltr column; add "D".

Revisions description column; add "Changes in accordance with NOR 5962-R409-97".

Revisions date column; add "97-08-12".

Revision level block; add "D".

Rev status of sheets; for sheets 2 and 17, add "D".

Paragraph 1.2.1 Device type(s).; For device types 23 through 27, under the "Write mode" heading delete "byte" and

replace with "byte/page".

Revision level block; add "D".

Sheet 17: FIGURE 5. Page write programming waveforms.; At top of sheet add "Device types 01 - 12 and 23 - 27"; also, footnote

3, delete sentence and replace with "Page load is 1 to 64 bytes of data for device types 01 through 12 and 23 through

27.

Revision level block; add "D".

Sheet 2:

14. THIS SECTION FOR GOVERNMENT USE ONLY

(X one)

(1) Existing document supplemented by the NOR may be used in manufacture.

(2) Revised document must be received before manufacturer may incorporate this change.

(3) Custodian of master document shall make above revision and furnish revised document.

b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR

GOVERNMENT

DSCC-VAS

d. TITLE

Chief, Microelectronics Branch

15a. ACTIVITY ACCOMPLISHING REVISION

DSCC-VAS

DD Form 1695, APR 92

e. SIGNATURE

Raymond Monnin

b. REVISION COMPLETED

(Signature)

Gary L. Gross

f. DATE SIGNED

(YYMMDD)

97-08-12

c. DATE SIGNED

(YYMMDD)

97-08-12

c. TYPED NAME

(First, Middle Initial, Last)

Previous editions are obsolete.

1.3 Absolute maximum ratings. 1/

Supply voltage range (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Maximum power dissipation (PD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . .

Junction temperature (TJ) 2/ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal resistance, junction-to-case ( JC) . . . . . . . . . . . . . . . . . . . . . . .

Input voltage range (VIL, VIH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Endurance:

Device types 01 through 04, 06 through 26, and 28 . . . . . . . . . . . . . . .

Device types 05 and 27 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Chip clear voltage (VH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

-0.3 V dc to +6.25 V dc

-65

C to +150

1.0 W

+300

+175

See MIL-STD-1835

-0.3 V dc to +6.25 V dc

10 years (minimum)

10,000 cycles/byte (minimum)

100,000 cycles/byte (minimum)

13.0 V dc

1.4 Recommended operating conditions. 1/

Supply voltage range (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Case operating temperature range (TC) . . . . . . . . . . . . . . . . . . . . . . . . . .

Input voltage, low range (VIL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input voltage, high range (VIH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Chip clear voltage range (VH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2. APPLICABLE DOCUMENTS

2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of

this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue

of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation.

SPECIFICATION

MILITARY

MIL-PRF-38535 - Integrated Circuits Manufacturing, General Specification for.

STANDARDS

MILITARY

MIL-STD-883

MIL-STD-973

MIL-STD-1835

HANDBOOKS

MILITARY

MIL-HDBK-103

MIL-HDBK-780

- List of Standard Microcircuit Drawings (SMD's).

- Standard Microcircuit Drawings.

- Test Methods and Procedures for Microelectronics.

- Configuration Management.

- Microcircuit Case Outlines.

+4.5 V dc to +5.5 V dc

-55

C to +125

-0.1 V dc to +0.8 V dc

+2.0 V dc to VCC +0.3 V dc

12 V dc to 13 V dc

(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization

Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of

this drawing shall take precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a

specific exemption has been obtained.

All voltages are referenced to VSS (ground).

Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in

accordance with method 5004 of MIL-STD-883.

SIZE

STANDARD

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216

DESC FORM 193A

JUL 94

REVISION LEVEL

5962-87514

SHEET

3. REQUIREMENTS

3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN

class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing

(QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may

be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity approval in

accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make modifications to

the requirements herein. These modifications shall not affect form, fit, or function of the device. These modifications shall not affect

the PIN as described herein. A "Q" or "QML" certification mark in accordance with MIL-PRF-38535 is required to identify when the

QML flow option is used.

3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in

MIL-PRF-38535, appendix A and herein.

3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.2 herein and figure 1.

3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.

3.2.3 Truth table for unprogrammed devices. The truth table for unprogrammed devices shall be as specified on figure 3.

3.2.3.1 Programmed devices. The truth table for programmed devices shall be as specified by an attached altered item drawing.

3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as

specified in table I and shall apply over the full case operating temperature range.

3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests

for each subgroup are described in table I.

3.5 Marking. Marking shall be in accordance with MIL-PRF-38535, appendix A. The part shall be marked with the PIN listed in

1.2 herein. In addition, the manufacturer's PIN may also be marked as listed in MIL-HDBK-103 (see 6.6 herein). For packages

where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not

marking the "5962-" on the device.

3.6 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to be listed as an

approved source of supply in MIL-HDBK-103 (see 6.6 herein). The certificate of compliance submitted to DSCC-VA prior to listing

as an approved source of supply shall affirm that the manufacturer's product meets the requirements of MIL-PRF-38535, appendix

A and the requirements herein.

3.7 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38535, appendix A shall be provided with

each lot of microcircuits delivered to this drawing.

3.8 Notification of change. Notification of change to DSCC-VA shall be required in accordance with MIL-PRF-38535, appendix

3.9 Verification and review. DSCC, DSCC's agent, and the acquiring activity retain the option to review the manufacturer's facility

and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer.

3.10 Processing EEPROMS. All testing requirements and quality assurance provisions herein shall be satisfied by the

manufacturer prior to delivery.

3.10.1 Erasure of EEPROMS. When specified, devices shall be erased in accordance with the procedures and characteristics

specified in 4.4.1. Devices shall be shipped in the erased (logic "1's) and verified state unless otherwise specified.

3.10.2 Programmability of EEPROMS. When specified, devices shall be programmed to the specified pattern using the

procedures and characteristics specified in 4.4.

3.10.3 Verification of erasure or programmability of EEPROMS. When specified, devices shall be verified as either programmed

to the specified pattern or erased. As a minimum, verification shall consist of reading the device in accordance with the procedures

and characteristics specified in 4.4.2. Any bit that does not verify to be in the proper state shall constitute a device failure, and shall

be removed from the lot.

SIZE

STANDARD

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216

DESC FORM 193A

JUL 94

REVISION LEVEL

5962-87514

SHEET

5962-01-412-5953相似产品对比

	5962-01-412-5953	5962-01-312-0598	5962-01-358-9694	5962-01-413-5392	5962-01-424-1905	5962-01-428-6092
描述	EEPROM, 8KX8, 300ns, Parallel, CMOS, CQCC32,	EEPROM, 8KX8, 250ns, Parallel, CMOS, CDIP28,	EEPROM, 8KX8, 200ns, Parallel, CMOS, CDIP28,	EEPROM, 8KX8, 250ns, Parallel, CMOS, CDIP28,	EEPROM, 8KX8, 250ns, Parallel, CMOS, CQCC32,	EEPROM, 8KX8, 250ns, Parallel, CMOS, CQCC32,
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
最长访问时间	300 ns	250 ns	200 ns	250 ns	250 ns	250 ns
命令用户界面	NO	NO	NO	NO	NO	NO
数据轮询	YES	YES	YES	YES	YES	YES
耐久性	10000 Write/Erase Cycles	10000 Write/Erase Cycles	10000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	10000 Write/Erase Cycles
JESD-30 代码	R-XQCC-N32	R-XDIP-T28	R-XDIP-T28	R-XDIP-T28	R-XQCC-N32	R-XQCC-N32
内存密度	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit
内存集成电路类型	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM
内存宽度	8	8	8	8	8	8
端子数量	32	28	28	28	32	32
字数	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words
字数代码	8000	8000	8000	8000	8000	8000
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
组织	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8
封装主体材料	CERAMIC	CERAMIC	CERAMIC	CERAMIC	CERAMIC	CERAMIC
封装代码	QCCN	DIP	DIP	DIP	QCCN	QCCN
封装等效代码	LCC32,.45X.55	DIP28,.6	DIP28,.6	DIP28,.6	LCC32,.45X.55	LCC32,.45X.55
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	CHIP CARRIER	IN-LINE	IN-LINE	IN-LINE	CHIP CARRIER	CHIP CARRIER
页面大小	64 words	64 words	64 words	64 words	64 words	64 words
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
电源	5 V	5 V	5 V	5 V	5 V	5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
筛选级别	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535Q/M;38534H;883B
最大待机电流	0.00025 A	0.00025 A	0.00025 A	0.00025 A	0.00025 A	0.00025 A
最大压摆率	0.06 mA	0.06 mA	0.06 mA	0.06 mA	0.06 mA	0.06 mA
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	NO	NO	NO	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
端子形式	NO LEAD	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	NO LEAD	NO LEAD
端子节距	1.27 mm	2.54 mm	2.54 mm	2.54 mm	1.27 mm	1.27 mm
端子位置	QUAD	DUAL	DUAL	DUAL	QUAD	QUAD
切换位	YES	YES	YES	YES	YES	YES
最长写入周期时间 (tWC)	10 ms	10 ms	10 ms	10 ms	10 ms	10 ms
厂商名称	Xicor Inc	-	Xicor Inc	Xicor Inc	Xicor Inc	Xicor Inc

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