Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-1110
Features
• High Dynamic Range
Cascadable 50
Ω
or 75
Ω
Gain Block
• 3 dB Bandwidth:
50 MHz to 1.6 GHz
• 17.5 dBm Typical P
1 dB
at
0.5 GHz
• 12 dB Typical 50
Ω
Gain at
0.5 GHz
• 3.5 dB Typical Noise Figure
at 0.5 GHz
• Hermetic Gold-ceramic
Microstrip Package
(MMIC) housed in a hermetic high
reliability package. This MMIC is
designed for high dynamic range
in either 50 or 75
Ω
systems by
combining low noise figure with
high IP
3
. Typical applications
include narrow and broadband
linear amplifiers in industrial and
military systems.
The MSA-series is fabricated using
Agilent’s 10 GHz f
T
, 25 GHz f
MAX
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
100 mil Package
Description
The MSA-1110 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
Typical Biasing Configuration
R
bias
V
CC
>
8
V
RFC (Optional)
4
C
block
3
IN
1
MSA
C
block
OUT
V
d
= 5.5 V
2
2
MSA-1110 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
90 mA
560 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance
[2,4]
:
θ
jc
= 135°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 7.4 mW/°C for T
C
> 124°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of
θ
jc
than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
∆G
P
f
3 dB
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Parameters and Test Conditions: I
d
= 60 mA, Z
O
= 50
Ω
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB
Bandwidth
[2]
f = 0.1 to 1.0 GHz
f = 0.1 to 1.0 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
Input VSWR
Output VSWR
50
Ω
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.1 GHz
f = 0.1 to 1.0 GHz
Units
dB
dB
GHz
Min.
11.5
Typ.
12.5
±0.7
1.6
1.7:1
1.9:1
Max.
13.5
±1.0
dB
dBm
dBm
psec
V
mV/°C
4.5
16.0
3.5
17.5
30.0
160
5.5
–8.0
4.5
6.5
Notes:
1. The recommended operating current range for this device is 40 to 75 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 50 MHz gain (G
P
).
3
MSA-1110 Typical Scattering Parameters (Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 60 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
k
.0005
.005
.025
.050
.100
.200
.300
.400
.500
.600
.700
.800
.900
1.000
1.500
2.000
2.500
3.000
.83
.54
.15
.10
.08
.09
.11
.13
.16
.18
.21
.23
.25
.27
.36
.42
.47
.47
–7
–50
–78
–64
–63
–74
–85
–94
–102
–108
–114
–120
–126
–131
–153
–171
177
159
19.5
16.8
13.0
12.6
12.5
12.4
12.3
12.3
12.1
12.0
11.8
11.6
11.4
11.1
9.8
8.4
7.2
5.9
9.44
6.92
4.47
4.26
4.23
4.17
4.10
4.10
4.04
3.98
3.89
3.80
3.71
3.60
3.10
2.64
2.29
1.97
176
158
167
171
171
166
160
154
148
143
137
131
126
120
96
74
59
43
–31.9
–18.7
–16.6
–16.5
–16.5
–16.4
–16.2
–16.1
–15.9
–15.6
–15.4
–15.2
–15.0
–14.8
–13.8
–13.3
–12.5
–13.2
.025
.116
.148
.149
.150
.152
.154
.157
.161
.165
.169
.173
.178
.182
.203
.217
.236
.220
39
34
9
5
4
4
5
6
7
8
8
8
8
8
4
1
–2
–10
.84
.55
.15
.10
.08
.09
.12
.15
.18
.20
.23
.25
.28
.30
.37
.40
.41
.38
–7
–50
–79
–67
–66
–78
–89
–98
–106
–113
–120
–126
–132
–137
–160
–178
172
157
0.77
0.60
1.03
1.08
1.09
1.09
1.07
1.05
1.02
1.00
0.97
0.95
0.92
0.91
0.83
0.82
0.80
0.95
A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
A
= 25°C, Z
O
= 50
Ω
(unless otherwise noted)
16
14
12
G
p
(dB)
10
8
6
4
20
2
0
.02
0
.05
0.1
0.5 1.0
2.0 3.0
0
2
4
V
d
(V)
6
8
FREQUENCY (GHz)
4
20
40
60
I
d
(mA)
80
6
Z
O
= 50
Ω
100
T
C
= +125°C
T
C
= +25°C
12
14
0.1 GHz
0.5 GHz
1.0 GHz,
1.0 GHz
80 T = –55°C
C
60
G
p
(dB)
I
d
(mA)
Z
O
= 75
Ω
10
2.0 GHz
40
8
Figure 1. Typical Power Gain vs.
Frequency, I
d
= 60 mA.
P
1 dB
(dBm)
18
17
16
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
22
I
d
= 75 mA
5.0
20
P
1 dB
Gp (dB)
18
13
12
G
P
11
P
1 dB
(dBm)
4.5
NF (dB)
I
d
= 60 mA
4.0
16
3.5
I
d
= 40 mA
3.0
0.1
5
NF (dB)
4
3
–55
+25
TEMPERATURE (°C)
+125
NF
14
I
d
= 75 mA
I
d
= 60 mA
I
d
= 40 mA
0.2 0.3
0.5
1.0
2.0
12
0.1
0.2 0.3
0.5
1.0
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, Noise Figure and Power
Gain vs. Case Temperature,
f = 0.5 GHz, I
d
= 60 mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
100 mil Package Dimensions
.040
1.02
4
GROUND
.020
.508
RF INPUT
1
RF OUTPUT
AND BIAS
3
2
GROUND
.004
±
.002
.10
±
.05
.100
2.54
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx =
±
0.005
mm .xx =
±
0.13
.495
±
.030
12.57
±
.76
.030
.76
www.semiconductor.agilent.com
Data subject to change.
Copyright © 1999 Agilent Technologies
5965-9558E (11/99)
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