S72WS256ND0KFWZJ3,S72WS256ND0KFWZJ3 pdf中文资料,S72WS256ND0KFWZJ3引脚图,S72WS256ND0KFWZJ3电路-Datasheet-电子工程世界

Datasheet> 器件分类 > 存储> 存储> S72WS256ND0KFWZJ3

S72WS256ND0KFWZJ3: 产品描述Memory Circuit, 16MX16, CMOS, PBGA137, 9 X 12 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-137; 产品类别存储存储; 文件大小620KB，共29页; 制造商SPANSION; 官网地址http://www.spansion.com/; 标准

下载文档详细参数选型对比全文预览

S72WS256ND0KFWZJ3概述

Memory Circuit, 16MX16, CMOS, PBGA137, 9 X 12 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-137

S72WS256ND0KFWZJ3规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	SPANSION
零件包装代码	BGA
包装说明	TFBGA,
针数	137
Reach Compliance Code	compliant
其他特性	MOBILE SDRAM IS ORGANIZED AS 2M X 16BIT X 4 BANKS; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
JESD-30 代码	R-PBGA-B137
JESD-609代码	e1
长度	12 mm
内存密度	268435456 bit
内存集成电路类型	MEMORY CIRCUIT
内存宽度	16
功能数量	1
端子数量	137
字数	16777216 words
字数代码	16000000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-25 °C
组织	16MX16
封装主体材料	PLASTIC/EPOXY
封装代码	TFBGA
封装形状	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度（摄氏度）	260
认证状态	Not Qualified
座面最大高度	1.2 mm
最大供电电压 (Vsup)	1.95 V
最小供电电压 (Vsup)	1.7 V
标称供电电压 (Vsup)	1.8 V
表面贴装	YES
技术	CMOS
温度等级	OTHER
端子面层	TIN SILVER COPPER
端子形式	BALL
端子节距	0.8 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	40
宽度	9 mm

S72WS256ND0KFWZJ3相似产品对比

	S72WS256ND0KFWZJ3	S72WS256ND0KFWZJ2	S72WS512NEFKFHHJ3	S72WS512NEFKFHHJ2	S72WS512NEFKFHHJ0	S72WS256ND0KFWZJ0
描述	Memory Circuit, 16MX16, CMOS, PBGA137, 9 X 12 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-137	Memory Circuit, 16MX16, CMOS, PBGA137, 9 X 12 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-137	Memory Circuit, 32MX16, CMOS, PBGA160, 15 X 15 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-160	Memory Circuit, 32MX16, CMOS, PBGA160, 15 X 15 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-160	Memory Circuit, 32MX16, CMOS, PBGA160, 15 X 15 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-160	Memory Circuit, 16MX16, CMOS, PBGA137, 9 X 12 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-137
零件包装代码	BGA	BGA	BGA	BGA	BGA	BGA
包装说明	TFBGA,	TFBGA,	LFBGA,	LFBGA,	LFBGA,	TFBGA,
针数	137	137	160	160	160	137
Reach Compliance Code	compliant	compliant	unknown	unknown	unknown	compliant
其他特性	MOBILE SDRAM IS ORGANIZED AS 2M X 16BIT X 4 BANKS; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	MOBILE SDRAM IS ORGANIZED AS 2M X 16BIT X 4 BANKS; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	MOBILE SDRAM IS ORGANIZED AS 4M X 16BIT X 4 BANKS; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	MOBILE SDRAM IS ORGANIZED AS 4M X 16BIT X 4 BANKS; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	MOBILE SDRAM IS ORGANIZED AS 4M X 16BIT X 4 BANKS; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	MOBILE SDRAM IS ORGANIZED AS 2M X 16BIT X 4 BANKS; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
JESD-30 代码	R-PBGA-B137	R-PBGA-B137	S-PBGA-B160	S-PBGA-B160	S-PBGA-B160	R-PBGA-B137
长度	12 mm	12 mm	15 mm	15 mm	15 mm	12 mm
内存密度	268435456 bit	268435456 bit	536870912 bit	536870912 bit	536870912 bit	268435456 bit
内存集成电路类型	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT
内存宽度	16	16	16	16	16	16
功能数量	1	1	1	1	1	1
端子数量	137	137	160	160	160	137
字数	16777216 words	16777216 words	33554432 words	33554432 words	33554432 words	16777216 words
字数代码	16000000	16000000	32000000	32000000	32000000	16000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
最低工作温度	-25 °C	-25 °C	-25 °C	-25 °C	-25 °C	-25 °C
组织	16MX16	16MX16	32MX16	32MX16	32MX16	16MX16
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TFBGA	TFBGA	LFBGA	LFBGA	LFBGA	TFBGA
封装形状	RECTANGULAR	RECTANGULAR	SQUARE	SQUARE	SQUARE	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	1.2 mm	1.25 mm	1.25 mm	1.25 mm	1.2 mm
最大供电电压 (Vsup)	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V
最小供电电压 (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
标称供电电压 (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
表面贴装	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER
端子形式	BALL	BALL	BALL	BALL	BALL	BALL
端子节距	0.8 mm	0.8 mm	0.65 mm	0.65 mm	0.65 mm	0.8 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
宽度	9 mm	9 mm	15 mm	15 mm	15 mm	9 mm
Base Number Matches	-	1	1	1	1	-

S72WS256ND0KFWZJ3

S72WS256ND0KFWZJ3概述

S72WS256ND0KFWZJ3规格参数

S72WS256ND0KFWZJ3相似产品对比

推荐资源