PRODUCTS
TUMT6
1.TYPE
2.STRUCTURE
3.APPLICATIONS
US6J2
SILICON
TYPE
US6J2
PAGE
1/4
P-CHANNEL MOS FET
SWITCHING
4.ABSOLUTE MAXIMUM RATINGS [Ta=25
o
C]
《
IT IS THE SAME RATINGS FOR THE Tr1 AND Tr2.
》
DRAIN-SOURCE VOLTAGE
V
DSS
・・・
-20V
GATE-SOURCE VOLTAGE
V
GSS
・・・
±12V
DRAIN CURRENT
CONTINUOUS
PULSED
I
D
I
DP
・・・
・・・
±1A
±4A
PW≦10µs
DUTY CYCLE≦1%
SOURCE CURRENT
(BODY DIODE)
CONTINUOUS
PULSED
I
S
I
SP
・・・
・・・
-0.4A
-4A
PW≦10µs
DUTY CYCLE≦1%
TOTAL POWER DISSIPATION
P
D
・・・
1.0W / TOTAL
0.7W / ELEMENT
MOUNTED ON A CERAMIC BOARD
CHANNEL TEMPERATURE
T
ch
・・・
150
o
C
RANGE OF STRAGE TEMPERATURE
T
stg
・・・
−55∼150
o
C
5.THERMAL RESISTANCE
CHANNEL TO AMBIENT
R
th(ch-a)
・・・
125
o
C/W / TOTAL
179℃/W / ELEMENT
MOUNTED ON A CERAMIC BOARD
DESIGN
CHECK
APPROVAL
DATE：29/SEP/2003
SPECIFICATION No. TSQ03125-US6J2
REV.： 0
TSZ22111½03
PRODUCTS
TUMT6
TYPE
US6J2
PAGE
2/4
6.ELECTRICAL CHARACTERISTICS [Ta=25
o
C]
《
IT IS THE SAME CHARACTERISTICS FOR THE Tr1 AND Tr2
》
PARAMETER
GATE-SOURCE LEAKAGE
DRAIN-SOURCE
BREAKDOWN VOLTAGE
ZERO GATE VOLTAGE
DRAIN CURRENT
GATEATHRESHOLD
VOLTAGE
ITEM
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
CONDITION
V
GS
=±12V/V
DS
=0V
I
D
=-1mA/V
GS
=0V
V
DS
=-20V/V
GS
=0V
V
DS
=-10V/I
D
=-1mA
I
D
=-1A/V
GS
=-4.5V
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE
R
DS(on)
* PULSED
I
D
=-1A/V
GS
=-4V
I
D
=-0.5A/V
GS
=-2.5V
FORWARDATRANSFER
ADMITTANCE
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSEATRANSFER
CAPACITANCE
TURN-ON DELAY TIME
RISE TIME
TURN-OFF DELAY TIME
FALL TIME
TOTAL GATE CHARGE
GATE-SOURCE CHARGE
GATE-DRAIN CHARGE
½Y
fs
½
* PULSED
C
iss
V
DS
=-10V
C
oss
C
rss
t
d(on)
* PULSED
t
r
* PULSED
t
d(off)
* PULSED
t
f
*PULSED
Q
g
*PULSED
Q
gs
*PULSED
Q
gd
*PULSED
V
GS
=0V
f=1MHz
-
-
-
I
D
=-0.5A
V
DD
≒-15V
V
GS
=-4.5V
R
L
≒30Ω/R
G
=10Ω
see Fig. 1-1,1-2
-
-
V
DD
≒-15V
V
GS
=-4.5V
I
D
=-1A
R
L
≒15Ω/R
G
=10Ω
see Fig. 2-1,2-2
-
-
0.5nC
0.5nC
-
-
-
25ns
10ns
2.1nC
-
-
-
-
8ns
-
20pF
20pF
9ns
-
-
-
V
DS
=-10V/I
D
=-0.5A
MIN.
-
-20V
-
-0.7V
-
-
-
0.7S
-
TYP.
-
-
-
-
280mΩ
310mΩ
570mΩ
-
150pF
MAX.
±10µA
-
-1µA
-2.0V
390mΩ
430mΩ
800mΩ
-
-
BODY DIODE (SOURCE-DRAIN)
《
IT IS THE SAME CHARACTERISTICS FOR THE Tr1 AND Tr2
》
PARAMETER
FORWARD VOLTAGE
ITEM
V
SD
CONDITION
I
S
=-0.4A／V
GS
=0V
MIN.
-
TYP.
-
MAX.
-1.2V
REV.： 0
SPECIFICATION No.： TSQ03125-US6J2
TSZ22111½04
PRODUCTS
TUMT6
7.INNER CIRCUIT
(6)
(5)
(4)
TYPE
US6J2
PAGE
3/4
(1) Tr1 SOURCE
※１
※２
※２
※１
(2) Tr1 GATE
(3) Tr2 DRAIN
(4) Tr2 SOURCE
(5) Tr2 GATE
(6) Tr1 DRAIN
(6)
(5)
(4)
(1)
(2)
(3)
(1)
※ １
※ ２
(2)
(3)
ESD PROTECTION DIODE
BODY DIODE
8. MARKING
“J02”MEANS US6J2.
J02
REV.： 0
SPECIFICATION No.： TSQ03125-US6J2
TSZ22111½04
PRODUCTS
TUMT6
9.MEASUREMENT CIRCUIT
TYPE
US6J2
PAGE
4/4
Fig.1-1
SWITCHING TIME MEASUREMENT CIRCUIT
Fig.1-2
SWITCHING WAVEFORMS
Fig.2-1
GATE CHARGE MASUREMENT CIRCUIT
Fig.2-2
GATE CHARGE WAVEFORM
REV.：
0
SPECIFICATION No.： TSQ03125-US6J2
TSZ22111½04
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