200mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, TO-226AA, 3 PIN
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | ON Semiconductor(安森美) |
零件包装代码 | TO-92 |
包装说明 | PLASTIC, TO-226AA, 3 PIN |
针数 | 3 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
其他特性 | EUROPEAN PART NUMBER |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 30 V |
最大漏极电流 (ID) | 0.2 A |
最大漏源导通电阻 | 1.2 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss) | 25 pF |
JEDEC-95代码 | TO-92 |
JESD-30 代码 | O-PBCY-T3 |
JESD-609代码 | e0 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | ROUND |
封装形式 | CYLINDRICAL |
峰值回流温度(摄氏度) | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL |
认证状态 | Not Qualified |
表面贴装 | NO |
端子面层 | TIN LEAD |
端子形式 | THROUGH-HOLE |
端子位置 | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管元件材料 | SILICON |
VN0300LRL | VN0300LRL1 | VN0300LRLRM | VN0300LZL1 | |
---|---|---|---|---|
描述 | 200mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, TO-226AA, 3 PIN | TRANSISTOR 200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, TO-226AA, 3 PIN, FET General Purpose Small Signal | 200mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, TO-226AA, 3 PIN | 200mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, TO-226AA, 3 PIN |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 |
零件包装代码 | TO-92 | TO-92 | TO-92 | TO-92 |
包装说明 | PLASTIC, TO-226AA, 3 PIN | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 |
针数 | 3 | 3 | 3 | 3 |
Reach Compliance Code | compliant | compliant | compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 30 V | 30 V | 30 V | 30 V |
最大漏极电流 (ID) | 0.2 A | 0.2 A | 0.2 A | 0.2 A |
最大漏源导通电阻 | 1.2 Ω | 1.2 Ω | 1.2 Ω | 1.2 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss) | 25 pF | 25 pF | 25 pF | 25 pF |
JEDEC-95代码 | TO-92 | TO-92 | TO-92 | TO-92 |
JESD-30 代码 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
JESD-609代码 | e0 | e0 | e0 | e0 |
元件数量 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | ROUND | ROUND | ROUND | ROUND |
封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO |
端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
其他特性 | EUROPEAN PART NUMBER | EUROPEAN PART NUMBER | - | EUROPEAN PART NUMBER |
Base Number Matches | - | 1 | 1 | 1 |
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