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IDT54FCT521CTDB

产品描述Identity Comparator, FCT Series, 8-Bit, Inverted Output, CMOS, CDIP20, CERAMIC, DIP-20
产品类别逻辑    逻辑   
文件大小174KB,共6页
制造商IDT (Integrated Device Technology)
下载文档 详细参数 选型对比 全文预览

IDT54FCT521CTDB概述

Identity Comparator, FCT Series, 8-Bit, Inverted Output, CMOS, CDIP20, CERAMIC, DIP-20

IDT54FCT521CTDB规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称IDT (Integrated Device Technology)
零件包装代码DIP
包装说明DIP, DIP20,.3
针数20
Reach Compliance Codenot_compliant
其他特性CASCADABLE
系列FCT
JESD-30 代码R-GDIP-T20
JESD-609代码e0
长度25.3365 mm
负载电容(CL)50 pF
逻辑集成电路类型IDENTITY COMPARATOR
位数8
功能数量1
端子数量20
最高工作温度125 °C
最低工作温度-55 °C
输出极性INVERTED
封装主体材料CERAMIC, GLASS-SEALED
封装代码DIP
封装等效代码DIP20,.3
封装形状RECTANGULAR
封装形式IN-LINE
峰值回流温度(摄氏度)225
电源5 V
传播延迟(tpd)5.1 ns
认证状态Not Qualified
筛选级别MIL-STD-883 Class B
座面最大高度5.08 mm
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装NO
技术CMOS
温度等级MILITARY
端子面层Tin/Lead (Sn/Pb)
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
处于峰值回流温度下的最长时间20
宽度7.62 mm

IDT54FCT521CTDB文档预览

IDT54/74FCT521T/AT/BT/CT
FAST CMOS 8-BIT IDENTITY COMPARATOR
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
FAST CMOS 8-BIT
IDT54/74FCT521T/AT/BT/CT
IDENTITY COMPARATOR
FEATURES:
Std., A, B and C speed grades
Low input and output leakage
≤1µ
A (max.)
CMOS power levels
True TTL input and output compatibility
V
OH
= 3.3V (typ.)
V
OL
= 0.3V (typ.)
High drive outputs (-15mA I
OH
, 48mA I
OL
)
Meets or exceeds JEDEC standard 18 specifications
Military product compliant to MIL-STD-883, Class B and DESC
listed (dual marked)
Power off disable outputs permit “live insertion”
Available in the following packages:
Industrial: SOIC, SSOP, QSOP
Military: CERDIP, LCC, CERPACK
DESCRIPTION:
The IDT54/74FCT521T is an 8-bit identity comparator built using an
advanced dual metal CMOS technology. These devices compare two
words of up to eight bits each and provide a low output when the two words
match bit for bit. The expansion input
I
A
=
B
also serves as an active low
enable input.
FUNCTIONAL BLOCK DIAGRAM
A
0
B
0
A
1
B
1
A
2
B
2
A
3
B
3
A
4
B
4
A
5
B
5
A
6
B
6
A
7
B
7
2
3
4
5
6
7
8
9
19
11
12
O
A=B
13
14
15
16
17
18
1
I
A=B
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
1
c
1999 Integrated Device Technology, Inc.
AUGUST 2000
DSC-2572/6
IDT54/74FCT521T/AT/BT/CT
FAST CMOS 8-BIT IDENTITY COMPARATOR
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
PIN CONFIGURATION
B
0
A
0
I
A =B
A
0
B
0
A
1
B
1
A
2
B
2
A
3
B
3
GND
1
2
3
4
5
6
7
8
9
10
D20-1
SO20-2
SO20-7
SO20-8
E20-1
20
19
18
17
16
15
14
13
12
11
V
CC
O
A=B
B
7
A
7
B
6
A
6
B
5
A
5
B
4
INDEX
3
2
1
20
V
CC
I
A=B
19
18
17
A
1
B
1
A
2
B
2
A
3
O
A=B
4
5
6
7
8
9
10
B
7
A
7
B
6
A
6
B
5
L20-2
16
15
14
11
12
13
B
3
A
4
B
4
A
4
CERDIP/ SOIC/ SSOP/ QSOP/ CERPACK
TOP VIEW
LCC
TOP VIEW
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM(2)
V
TERM(3)
T
STG
I
OUT
Rating
Terminal Voltage with Respect to GND
Terminal Voltage with Respect to GND
Storage Temperature
DC Output Current
Max.
–0.5 to +7
–0.5 to V
CC
+0.5
–65 to +150
–60 to +120
Unit
V
V
°C
mA
8T-link
PIN DESCRIPTION
Pin Names
A
0
- A
7
B
0
- B
7
I
A
=
B
O
A
=
B
Word A Inputs
Word B Inputs
Expansion or Enable Input (Active LOW)
Identity Output (Active LOW)
Description
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
No
terminal voltage may exceed Vcc by +0.5V unless otherwise noted.
2. Inputs and Vcc terminals only.
3. Outputs and I/O terminals only.
FUNCTION TABLE
(1)
Inputs
I
A=B
L
L
H
H
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
GND
A
5
Output
A, B
A = B*
A
B
A = B*
A
B
O
A=B
L
H
H
H
CAPACITANCE
(T
A
= +25
O
C, f = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
(1)
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Typ.
6
8
Max.
10
12
Unit
pF
pF
8T-link
*
A
0 =
B
0,
A
1 =
B
1,
A
2 =
B
2, etc.
NOTE:
1. This parameter is measured at characterization but not tested.
2
IDT54/74FCT521T/AT/BT/CT
FAST CMOS 8-BIT IDENTITY COMPARATOR
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Industrial: T
A
= -40°C to +85°C, V
CC
= 5.0V ± 5%; Military: T
A
= –55°C to +125°C, V
CC
= 5.0V ± 10%
Symbol
V
IH
V
IL
I
IH
I
IL
I
I
V
IK
I
OS
V
OH
Parameter
Input HIGH Level
Input LOW Level
Input HIGH Current
(4)
Input LOW Current
(4)
Input HIGH Current
(4)
Clamp Diode Voltage
Short Circuit Current
Output HIGH Voltage
Test Conditions
(1)
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
V
CC
= Max.
V
CC
= Max.
V
CC
= Max., V
I
= V
CC
(Max.)
V
CC
= Min., I
N
= –18mA
V
CC
= Max.
(3)
, V
O
= GND
V
CC
= Min.
V
IN
= V
IH
or V
IL
I
OH
= –6mA MIL
I
OH
= –8mA IND
I
OH
= –12mA MIL
I
OH
= –15mA IND
I
OL
= 32mA MIL
I
OL
= 48mA IND
Min.
2
Typ.
(2)
–0.7
–120
3.3
3
0.3
200
0.01
Max.
0.8
±1
±1
±1
–1.2
–225
0.5
1
Unit
V
V
µA
µA
µA
V
mA
V
V
V
mV
mA
V
I
= 2.7V
V
I
= 0.5V
–60
2.4
2
V
OL
V
H
I
CC
Output LOW Voltage
Input Hysteresis
Quiescent Power Supply Current
V
CC
= Min.
V
IN
= V
IH
or V
IL
V
CC
= Max.
V
IN
= GND or V
CC
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient.
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.
4. The test limit for this parameter is ±5µA at T
A
= -55°C.
3
IDT54/74FCT521T/AT/BT/CT
FAST CMOS 8-BIT IDENTITY COMPARATOR
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS
Symbol
∆I
CC
I
CCD
Parameter
Quiescent Power Supply
Current TTL
Inputs HIGH
Dynamic Power Supply Current
(4)
V
CC
= Max.
V
IN
= 3.4V
(3)
V
CC
= Max.
Outputs Open
One Input Toggling
50% Duty Cycle
V
CC
= Max.
Outputs Open
fi = 10MHz
One Bit Toggling
50% Duty Cycle
V
IN
= V
CC
V
IN
= GND
Test Conditions
(1)
Min.
Typ.
(2)
0.5
0.15
Max.
2
0.25
Unit
mA
mA/
MHz
I
C
Total Power Supply Current
(5)
V
IN
V
IN
V
IN
V
IN
= V
CC
= GND
= 3.4V
= GND
1.5
1.8
3.5
4.5
mA
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient.
3. Per TTL driven input (V
IN
= 3.4V). All other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
∆I
CC
D
H
N
T
+ I
CCD
(f
CP/
2 + f
i
N
i
)
I
CC
= Quiescent Current
∆I
CC
= Power Supply Current for a TTL High Input (V
IN
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
f
CP
= Clock Frequency for Register Devices (Zero for Non-Register Devices)
f
i
= Input Frequency
N
i
= Number of Inputs at f
i
All currents are in milliamps and all frequencies are in megahertz.
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
IDT54/74FCT521T
Com'l.
Symbol
t
PLH
t
PHL
t
PLH
t
PHL
Parameter
Propagation Delay
An or Bn to
O
A
=
B
Propagation Delay
I
A
=
B
to
O
A
=
B
C
L
= 50pF
R
L
= 500Ω
Mil.
IDT54/74FCT521AT
Com'l.
Mil.
IDT54/74FCT521BT
Com'l.
Mil.
IDT54/74FCT521CT
Com'l.
Mil.
Condition
(1)
Min
.
(2)
Max
.
Min
.
(2)
Max
.
Min
.
(2)
Max
.
Min
.
(2)
Max
.
Min
.
(2)
Max
.
Min
.
(2)
Max
.
Min
.
(2)
Max
.
Min
.
(2)
Max
.
Unit
1.5
1.5
11
10
1.5
1.5
15
9
1.5
1.5
7.2
6
1.5
1.5
9.5
7.8
1.5
1.5
5.5
4.6
1.5
1.5
7.3
6
1.5
1.5
4.5
4.1
1.5
1.5
5.1
4.5
ns
ns
NOTES:
1. See test circuit and waveforms.
2. Minimum limits are guaranteed but not tested on Propagation Delays.
4
IDT54/74FCT521T/AT/BT/CT
FAST CMOS 8-BIT IDENTITY COMPARATOR
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
TEST CIRCUITS AND WAVEFORMS
TEST CIRCUITS FOR ALL OUTPUTS
V
CC
500
V
IN
Pulse
Generator
D.U.T.
50pF
R
T
SWITCH POSITION
Test
Open Drain
Disable Low
Enable Low
All Other Tests
Open
8-link
7.0V
Switch
Closed
V
OUT
500
C
L
DEFINITIONS:
C
L
= Load capacitance: includes jig and probe capacitance.
R
T
= Termination resistance: should be equal to Z
OUT
of the Pulse
Generator.
O ctal lin k
SET-UP, HOLD, AND RELEASE TIMES
DATA
INPUT
t
SU
TIM ING
INPUT
ASYNCHRONOUS C ONTROL
PRES ET
CLEAR
ETC.
SYNCHRO NOUS CONTRO L
PRES ET
CLEAR
CLOCK ENABLE
ETC.
t
REM
t
H
3V
1.5V
0V
3V
1.5V
0V
3V
1.5V
0V
3V
1.5V
0V
O ctal lin k
PULSE WIDTH
LO W -HIGH-LOW
PULSE
t
W
HIGH-LOW -HIGH
PULSE
O ctal lin k
1.5V
1.5V
t
SU
t
H
PROPAGATION DELAY
SAM E PHASE
INPUT TRANSITION
t
PLH
OUTPUT
t
PLH
OPPOSITE P HASE
INPUT TRANSITION
t
PH L
t
PH L
3V
1.5V
0V
V
OH
1.5V
V
OL
3V
1.5V
0V
O ctal lin k
ENABLE AND DISABLE TIMES
ENAB LE
DISA BLE
3V
CO NTROL
INPUT
t
PZL
OUTPUT
NO RM A LLY
LO W
SW ITCH
CLOSE D
t
PZH
OUTPUT
NO RM A LLY
HIGH
SW ITCH
OPEN
3.5V
1.5V
0.3V
t
PHZ
0.3V
1.5V
0V
0V
O ctal lin k
1.5V
t
PLZ
0V
3.5V
V
OL
V
OH
NOTES:
1. Diagram shown for input Control Enable-LOW and input Control Disable-
HIGH
2. Pulse Generator for All Pulses: Rate
1.0MHz; t
F
2.5ns; t
R
2.5ns
5

IDT54FCT521CTDB相似产品对比

IDT54FCT521CTDB IDT54FCT521ATLB
描述 Identity Comparator, FCT Series, 8-Bit, Inverted Output, CMOS, CDIP20, CERAMIC, DIP-20 Identity Comparator, FCT Series, 8-Bit, Inverted Output, CMOS, CQCC20, LCC-20
是否Rohs认证 不符合 不符合
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology)
零件包装代码 DIP QLCC
包装说明 DIP, DIP20,.3 QCCN, LCC20,.35SQ
针数 20 20
Reach Compliance Code not_compliant not_compliant
其他特性 CASCADABLE CASCADABLE
系列 FCT FCT
JESD-30 代码 R-GDIP-T20 S-CQCC-N20
JESD-609代码 e0 e0
长度 25.3365 mm 8.89 mm
负载电容(CL) 50 pF 50 pF
逻辑集成电路类型 IDENTITY COMPARATOR IDENTITY COMPARATOR
位数 8 8
功能数量 1 1
端子数量 20 20
最高工作温度 125 °C 125 °C
最低工作温度 -55 °C -55 °C
输出极性 INVERTED INVERTED
封装主体材料 CERAMIC, GLASS-SEALED CERAMIC, METAL-SEALED COFIRED
封装代码 DIP QCCN
封装等效代码 DIP20,.3 LCC20,.35SQ
封装形状 RECTANGULAR SQUARE
封装形式 IN-LINE CHIP CARRIER
峰值回流温度(摄氏度) 225 225
电源 5 V 5 V
传播延迟(tpd) 5.1 ns 9.5 ns
认证状态 Not Qualified Not Qualified
筛选级别 MIL-STD-883 Class B MIL-STD-883 Class B
座面最大高度 5.08 mm 2.54 mm
最大供电电压 (Vsup) 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V
表面贴装 NO YES
技术 CMOS CMOS
温度等级 MILITARY MILITARY
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 THROUGH-HOLE NO LEAD
端子节距 2.54 mm 1.27 mm
端子位置 DUAL QUAD
处于峰值回流温度下的最长时间 20 30
宽度 7.62 mm 8.89 mm

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