SMCJ SERIES
Taiwan Semiconductor
CREAT BY ART
Suface Mount Transient Voltage Suppressor
FEATURES
- Low profile package
- Ideal for automated placement
- Glass passivated junction
- Built-in strain relief
- Excellent clamping capability
- Fast response time: Typically less than
1.0ps from 0 volt to BV min
- Typical IR less than 1μA above 10V
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
DO-214AB (SMC)
MECHANICAL DATA
Case:
DO-214AB (SMC)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.21 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25℃, tp=1ms (Note 1)
Steady state power dissipation
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage at 100 A for
Unidirectional only (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
SYMBOL
P
PK
P
D
I
FSM
V
F
R
θJC
R
θJA
T
J
T
STG
VALUE
1500
5
200
3.5 / 5.0
10
55
- 55 to +150
- 55 to +150
UNIT
Watts
Watts
A
Volts
℃/W
O
O
C
C
Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25℃ Per Fig. 2
Note 2: V
F
=3.5V on SMCJ5.0 thru SMCJ90 Devices and V
F
=5.0V on SMCJ100 thru SMCJ170 Devices
Devices for Bipolar Applications
1. For Bidrectional Use C or CA Suffix for Types SMCJ5.0 through Types SMCJ170
2. Electrical Characterstics Apply in Both Directions
ORDERING INFORMATION
PART NO.
AEC-Q101
QUALIFIED
SMCJxxxx
(Note 1)
R7
Prefix "H"
R6
M6
Suffix "G"
PACKING CODE
GREEN COMPOUND
CODE
SMC
SMC
SMC
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
PACKAGE
PACKING
Note 1: "xxxx" defines voltage from 5.0V (SMCJ5.0) to 170V (SMCJ170A)
EXAMPLE
PREFERRED P/N
SMCJ170A R7
SMCJ170A R7G
SMCJ170AHR7
PART NO.
SMCJ170A
SMCJ170A
SMCJ170A
H
AEC-Q101
QUALIFIED
PACKING CODE
R7
R7
R7
G
Green compound
AEC-Q101 qualified
Version: L14
GREEN
COMPOUND
DESCRIPTION
Document Number: DS_D1405073
SMCJ SERIES
Taiwan Semiconductor
CREAT BY ART
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG. 1 PEAK PULSE POWER RATING CURVE
100
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
TA = 25℃
125
PEAK PULSE POWER (P
PPM
) OR CURRENT(I
PP
)
DERATING IN PERCENTAGE, %
FIG.2 PULSE DERATING CURVE
P
PPM
, PEAK PULSE POWER, KW
100
75
50
25
0
0
25
50
75
100
125
150
175
200
10
1
0.1
0.1
1
10
100
1000
10000
tp, PULSE WIDTH, (uS)
T
A
, AMBIENT TEMPERATURE (
o
C)
FIG. 3 CLAMPING POWER PULSE WAVEFORM
IFSM, PEAK FORWARD SURGE CURRENT (A)
140
PEAK PULSE CURRENT (%)
120
100
80
60
40
20
0
0
td
0.5
1
1.5
2
t, TIME ms
2.5
3
3.5
4
PULSE WIDTH(td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% OF IPPM
1000
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
8.3ms Single Half Sine Wave
UNIDIRECTIONAL ONLY
tr=10μs
Peak Value
IPPM
Half Value-IPPM/2
10/1000μs, WAVEFORM
as DEFINED by R.E.A.
100
10
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 5 TYPICAL JUNCTION CAPACITANCE
100000
CJ, JUNCTION CAPACITANCE (pF)
A
UNIDIRECTIONAL
10000
VR=0
1000
100
TA=25℃
f=1.0MHz
Vsig=50mVp-p
1
VR-RATED
STAND-OFF
VOLTAGE
10
10
V(
BR
), BREAKDOWN VOLTAGE (V)
100
Document Number: DS_D1405073
Version: L14
SMCJ SERIES
Taiwan Semiconductor
CREAT BY ART
Breakdown Voltage
VBR (V)
at I
T
Min
SMCJ40
SMCJ40A
SMCJ43
SMCJ43A
SMCJ45
SMCJ45A
SMCJ48
SMCJ48A
SMCJ51
SMCJ51A
SMCJ54
SMCJ54A
SMCJ58
SMCJ58A
SMCJ60
SMCJ60A
SMCJ64
SMCJ64A
SMCJ70
SMCJ70A
SMCJ75
SMCJ75A
SMCJ78
SMCJ78A
SMCJ85
SMCJ85A
SMCJ90
SMCJ90A
SMCJ100
SMCJ100A
SMCJ110
SMCJ110A
SMCJ120
SMCJ120A
SMCJ130
SMCJ130A
SMCJ150
SMCJ150A
SMCJ160
SMCJ160A
SMCJ170
SMCJ170A
Notes:
1. V
BR
measure after I
T
applied for 300us, I
T
=square wave pulse or equivalent.
2. Surge current waveform per Figure. 3 and derate per Figure. 2.
3. For bipolar types having V
WM
of 10 volts and less, the I
D
limit is doubled.
4. All terms and symbols are consistent with ANSI/IEEE C62.35.
Document Number: DS_D1405073
Version: L14
GFQ
GFR
GFS
GFT
GFU
GFV
GFW
GFX
GFY
GFZ
GGD
GGE
GGF
GGG
GGH
GGK
GGL
GGM
GGN
GGP
GGQ
GGR
GGS
GGT
GGU
GGV
GGW
GGX
GGY
GGZ
GHD
GHE
GHF
GHG
GHH
GHK
GHL
GHM
GHN
GHP
GHQ
GHR
44.4
44.4
47.8
47.8
50
50
53.3
53.3
56.7
56.7
60
60
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
189
Max
54.3
49.1
58.4
52.8
61.1
55.3
65.1
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86
102
92.1
106
95.8
115
104
122
111
136
123
149
135
163
147
176
159
204
185
218
197
231
209
Test
Current
I
T
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Stand-Off
Voltage
V
WM
(V)
40
40
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
Maximum
Reverse Leakage
@ V
WM
I
D
(uA) (Note3)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Maximum
Peak Surge
Current
I
PPM
(A) (Note2)
22
24
20
22
19
21
18
20
17
19
16
18
15
16
14
16
13.8
15
12.6
13.9
11.7
13
11.3
12.5
10.4
11.5
9.8
10.7
8.8
9.7
8
8.9
7.3
8.1
6.8
7.5
5.8
6.4
5.4
6
5.1
5.7
Maximum
Clamping
Voltage at IPPM
Vc (V)
(Note5)
71.4
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
266
243
287
259
304
275
Device
Device
Marking
Code
ARM技术
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