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MBRS1060CT-YC0G

产品描述Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 60V V(RRM), Silicon, TO-263AB, D2PAK-3/2
产品类别分立半导体    二极管   
文件大小213KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
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MBRS1060CT-YC0G概述

Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 60V V(RRM), Silicon, TO-263AB, D2PAK-3/2

MBRS1060CT-YC0G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
包装说明D2PAK-3/2
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性LOW POWER LOSS
应用EFFICIENCY
外壳连接CATHODE
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.9 V
JEDEC-95代码TO-263AB
JESD-30 代码R-PSSO-G2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值正向电流120 A
元件数量2
相数1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流5 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
最大重复峰值反向电压60 V
最大反向电流100 µA
表面贴装YES
技术SCHOTTKY
端子面层Matte Tin (Sn)
端子形式GULL WING
端子位置SINGLE

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MBRS1045CT-Y thru MBRS10150CT-Y
Taiwan Semiconductor
CREAT BY ART
FEATURES
Dual Common Cathode Schottky Rectifier
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
TO-263AB (D
2
PAK)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
As marked
Weight:
1.37 g (approximately)
TO-263AB (D
2
PAK)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25
o
C unless otherwise noted)
MBRS
PARAMETER
SYMBOL
1045
CT-Y
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
I
F
= 5 A, T
J
=25
o
C
I
F
= 5 A, T
J
=125 C
I
F
= 10 A, T
J
=25 C
I
F
= 10 A, T
J
=125 C
Maximum reverse current @ rated VR
T
J
=25 C
T
J
=100
o
C
T
J
=125
o
C
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0
μs,
1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
dV/dt
R
θJC
T
J
T
STG
I
R
15
10
o
o
o
o
MBRS
1060
CT-Y
MBRS
1060CT
60
42
60
10
10
120
1
MBRS
10100
CT-Y
MBRS
10100CT
100
70
100
MBRS
10150
CT-Y
MBRS
10150CT
150
105
150
V
V
V
A
A
A
A
Unit
MBRS
1045CT
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
0.70
V
F
0.57
0.80
0.67
45
31
45
0.80
0.65
0.90
0.75
0.1
0.85
0.75
0.95
0.85
-
5
10000
2
0.88
0.78
0.98
0.88
mA
V/μs
O
V
-
C/W
O
O
- 55 to +150
- 55 to +150
C
C
Document Number: DS_D1407034
Version: A14

 
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