RFMD’s SBA5086Z is a high performance InGaP/GaAs Heterojunction Bipolar Tran-
sistor MMIC Amplifier. A Darlington configuration designed with InGaP process tech-
nology provides broadband performance up to 5GHz with excellent thermal
performance. The heterojunction increases breakdown voltage and minimizes leak-
age current between junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products. Only a single positive
supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke
are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Features
IP3=34.0dBm at 1950MHz
P
OUT
=13.3dBm at -45dBc
ACP IS-95 1950MHz
Robust 1000V ESD, Class 1C
Operates From Single Supply
Patented Thermal Design
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
Gain & Return Loss
Applications
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
S21
IF Amplifier
Wireless Data, Satellite
Terminals
S11
S22
Frequency (GHz)
Parameter
Small Signal Gain
Min.
17.5
15.7
Specification
Typ.
Max.
Unit
Condition
19.0
20.5
dB
850MHz
17.2
18.7
dB
1950MHz
Output Power at 1dB Compression
19.5
dBm
850MHz
18
19.5
dBm
1950MHz
Output Third Order Intercept Point
36.9
dBm
850MHz
32.0
34.0
dBm
1950MHz
Output Power
13.3
dBm
1950MHz, -45dBc ACP IS-95 9 Forward Channels
Bandwidth
5000
MHz
Return Loss >10dB
Input Return Loss
11.0
13.0
dB
1950MHz
Output Return Loss
14.0
19.0
dB
1950MHz
Noise Figure
4.5
5.5
dB
1950MHz
Device Operating Voltage
4.7
4.9
5.3
V
Device Operating Current
72
80
88
mA
Thermal Resistance (junction to lead)
102
°C/W
Test Conditions: V
S
=8V, I
D
=80mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=0dBm, R
BIAS
=39, T
L
=25°C, Z
S
=Z
L
=50
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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