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Datasheet> 器件分类 > 存储> 存储> IS45S16800E-7BLA2

IS45S16800E-7BLA2: 产品描述Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, BGA-54; 产品类别存储存储; 文件大小886KB，共62页; 制造商Integrated Silicon Solution ( ISSI ); 标准

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IS45S16800E-7BLA2在线购买

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IS45S16800E-7BLA2概述

Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, BGA-54

IS45S16800E-7BLA2规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	Integrated Silicon Solution ( ISSI )
零件包装代码	BGA
包装说明	TFBGA, BGA54,9X9,32
针数	54
Reach Compliance Code	compliant
ECCN代码	EAR99
访问模式	FOUR BANK PAGE BURST
最长访问时间	5.4 ns
其他特性	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	143 MHz
I/O 类型	COMMON
交错的突发长度	1,2,4,8
JESD-30 代码	S-PBGA-B54
JESD-609代码	e1
长度	8 mm
内存密度	134217728 bit
内存集成电路类型	SYNCHRONOUS DRAM
内存宽度	16
湿度敏感等级	3
功能数量	1
端口数量	1
端子数量	54
字数	8388608 words
字数代码	8000000
工作模式	SYNCHRONOUS
最高工作温度	105 °C
最低工作温度	-40 °C
组织	8MX16
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	TFBGA
封装等效代码	BGA54,9X9,32
封装形状	SQUARE
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度（摄氏度）	260
电源	3.3 V
认证状态	Not Qualified
刷新周期	4096
座面最大高度	1.2 mm
自我刷新	YES
连续突发长度	1,2,4,8,FP
最大待机电流	0.001 A
最大压摆率	0.16 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式	BALL
端子节距	0.8 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	10
宽度	8 mm

IS45S16800E-7BLA2相似产品对比

	IS45S16800E-7BLA2	IS45S16800E-7BLA2-TR	IS45S16800E-7TLA1-TR	IS45S16800E-7TLA2	IS45S16800E-7BLA1	IS45S16800E-7BLA1-TR	IS45S16800E-7TLA2-TR	IS45S16800E-6BLA1-TR	IS45S16800E-6BLA1	IS45S16800E-7TLA1
描述	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, BGA-54	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, BGA-54	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, BGA-54	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, TSOP2-54
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	符合	符合	符合
厂商名称	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
最长访问时间	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns
最大时钟频率 (fCLK)	143 MHz	143 MHz	143 MHz	143 MHz	143 MHz	143 MHz	143 MHz	166 MHz	166 MHz	143 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
交错的突发长度	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 代码	S-PBGA-B54	S-PBGA-B54	R-PDSO-G54	R-PDSO-G54	S-PBGA-B54	S-PBGA-B54	R-PDSO-G54	S-PBGA-B54	S-PBGA-B54	R-PDSO-G54
内存密度	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit
内存集成电路类型	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
内存宽度	16	16	16	16	16	16	16	16	16	16
端子数量	54	54	54	54	54	54	54	54	54	54
字数	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words
字数代码	8000000	8000000	8000000	8000000	8000000	8000000	8000000	8000000	8000000	8000000
最高工作温度	105 °C	105 °C	85 °C	105 °C	85 °C	85 °C	105 °C	85 °C	85 °C	85 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
组织	8MX16	8MX16	8MX16	8MX16	8MX16	8MX16	8MX16	8MX16	8MX16	8MX16
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TFBGA	FBGA	TSOP	TSOP2	TFBGA	FBGA	TSOP	FBGA	TFBGA	TSOP2
封装等效代码	BGA54,9X9,32	BGA54,9X9,32	TSOP54,.46,32	TSOP54,.46,32	BGA54,9X9,32	BGA54,9X9,32	TSOP54,.46,32	BGA54,9X9,32	BGA54,9X9,32	TSOP54,.46,32
封装形状	SQUARE	SQUARE	RECTANGULAR	RECTANGULAR	SQUARE	SQUARE	RECTANGULAR	SQUARE	SQUARE	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, FINE PITCH	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, FINE PITCH	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE
电源	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	4096	4096	4096	4096	4096	4096	4096	4096	4096	4096
连续突发长度	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
最大待机电流	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A
最大压摆率	0.16 mA	0.16 mA	0.16 mA	0.16 mA	0.16 mA	0.16 mA	0.16 mA	0.18 mA	0.18 mA	0.16 mA
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子形式	BALL	BALL	GULL WING	GULL WING	BALL	BALL	GULL WING	BALL	BALL	GULL WING
端子节距	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
端子位置	BOTTOM	BOTTOM	DUAL	DUAL	BOTTOM	BOTTOM	DUAL	BOTTOM	BOTTOM	DUAL

IS45S16800E-7BLA2

IS45S16800E-7BLA2在线购买

IS45S16800E-7BLA2概述

IS45S16800E-7BLA2规格参数

IS45S16800E-7BLA2相似产品对比

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