128KX8 FLASH 12V PROM, 150ns, PDIP32, PLASTIC, DIP-32
参数名称 | 属性值 |
厂商名称 | ST(意法半导体) |
零件包装代码 | DIP |
包装说明 | PLASTIC, DIP-32 |
针数 | 32 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
最长访问时间 | 150 ns |
JESD-30 代码 | R-PDIP-T32 |
长度 | 41.91 mm |
内存密度 | 1048576 bit |
内存集成电路类型 | FLASH |
内存宽度 | 8 |
功能数量 | 1 |
端子数量 | 32 |
字数 | 131072 words |
字数代码 | 128000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 128KX8 |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | DIP |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
并行/串行 | PARALLEL |
编程电压 | 12 V |
认证状态 | Not Qualified |
座面最大高度 | 5.08 mm |
最大供电电压 (Vsup) | 3.6 V |
最小供电电压 (Vsup) | 3 V |
标称供电电压 (Vsup) | 3.3 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子形式 | THROUGH-HOLE |
端子节距 | 2.54 mm |
端子位置 | DUAL |
类型 | NOR TYPE |
宽度 | 15.24 mm |
M28V101AP | M28V101AN | M28F101AK | M28V101AK | M28F101AN | M28F101AP | |
---|---|---|---|---|---|---|
描述 | 128KX8 FLASH 12V PROM, 150ns, PDIP32, PLASTIC, DIP-32 | 128KX8 FLASH 12V PROM, 150ns, PDSO32, 8 X 20 MM, TSOP-32 | 128KX8 FLASH 12V PROM, 60ns, PQCC32, PLASTIC, LCC-32 | 128KX8 FLASH 12V PROM, 150ns, PQCC32, PLASTIC, LCC-32 | 128KX8 FLASH 12V PROM, 60ns, PDSO32, 8 X 20 MM, TSOP-32 | 128KX8 FLASH 12V PROM, 60ns, PDIP32, PLASTIC, DIP-32 |
零件包装代码 | DIP | TSOP | QFJ | QFJ | TSOP | DIP |
包装说明 | PLASTIC, DIP-32 | 8 X 20 MM, TSOP-32 | PLASTIC, LCC-32 | PLASTIC, LCC-32 | 8 X 20 MM, TSOP-32 | PLASTIC, DIP-32 |
针数 | 32 | 32 | 32 | 32 | 32 | 32 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknow |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最长访问时间 | 150 ns | 150 ns | 60 ns | 150 ns | 60 ns | 60 ns |
JESD-30 代码 | R-PDIP-T32 | R-PDSO-G32 | R-PQCC-J32 | R-PQCC-J32 | R-PDSO-G32 | R-PDIP-T32 |
长度 | 41.91 mm | 18.4 mm | 13.995 mm | 13.995 mm | 18.4 mm | 41.91 mm |
内存密度 | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bi |
内存集成电路类型 | FLASH | FLASH | FLASH | FLASH | FLASH | FLASH |
内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 32 | 32 | 32 | 32 | 32 | 32 |
字数 | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words |
字数代码 | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
组织 | 128KX8 | 128KX8 | 128KX8 | 128KX8 | 128KX8 | 128KX8 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | DIP | TSOP1 | QCCJ | QCCJ | TSOP1 | DIP |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | SMALL OUTLINE, THIN PROFILE | CHIP CARRIER | CHIP CARRIER | SMALL OUTLINE, THIN PROFILE | IN-LINE |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
编程电压 | 12 V | 12 V | 12 V | 12 V | 12 V | 12 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 5.08 mm | 1.2 mm | 3.56 mm | 3.56 mm | 1.2 mm | 5.08 mm |
最大供电电压 (Vsup) | 3.6 V | 3.6 V | 5.5 V | 3.6 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 3 V | 3 V | 4.5 V | 3 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 3.3 V | 3.3 V | 5 V | 3.3 V | 5 V | 5 V |
表面贴装 | NO | YES | YES | YES | YES | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子形式 | THROUGH-HOLE | GULL WING | J BEND | J BEND | GULL WING | THROUGH-HOLE |
端子节距 | 2.54 mm | 0.5 mm | 1.27 mm | 1.27 mm | 0.5 mm | 2.54 mm |
端子位置 | DUAL | DUAL | QUAD | QUAD | DUAL | DUAL |
类型 | NOR TYPE | NOR TYPE | NOR TYPE | NOR TYPE | NOR TYPE | NOR TYPE |
宽度 | 15.24 mm | 8 mm | 11.455 mm | 11.455 mm | 8 mm | 15.24 mm |
厂商名称 | ST(意法半导体) | - | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) |
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