Small Signal Field-Effect Transistor, 0.33A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-226AA (TO-92), 3 PIN
参数名称 | 属性值 |
厂商名称 | TEMIC |
包装说明 | CYLINDRICAL, O-PBCY-W3 |
Reach Compliance Code | unknown |
其他特性 | LOW THRESHOLD |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 60 V |
最大漏极电流 (ID) | 0.33 A |
最大漏源导通电阻 | 3 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss) | 10 pF |
JEDEC-95代码 | TO-226AA |
JESD-30 代码 | O-PBCY-W3 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | ROUND |
封装形式 | CYLINDRICAL |
极性/信道类型 | N-CHANNEL |
认证状态 | Not Qualified |
表面贴装 | NO |
端子形式 | WIRE |
端子位置 | BOTTOM |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
VN0606L | VN66AFD | TN0601L | VN0606M | |
---|---|---|---|---|
描述 | Small Signal Field-Effect Transistor, 0.33A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-226AA (TO-92), 3 PIN | Power Field-Effect Transistor, 1.46A I(D), 60V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220SD, 3 PIN | Small Signal Field-Effect Transistor, 0.47A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-226AA (TO-92), 3 PIN | Small Signal Field-Effect Transistor, 0.39A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-237AA, TO-237, 3 PIN |
厂商名称 | TEMIC | TEMIC | TEMIC | TEMIC |
包装说明 | CYLINDRICAL, O-PBCY-W3 | TO-220SD, 3 PIN | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 |
Reach Compliance Code | unknown | unknown | unknown | unknown |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 60 V | 60 V | 60 V | 60 V |
最大漏极电流 (ID) | 0.33 A | 1.46 A | 0.47 A | 0.39 A |
最大漏源导通电阻 | 3 Ω | 6 Ω | 1.8 Ω | 3 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | O-PBCY-W3 | R-PSFM-T3 | O-PBCY-W3 | O-PBCY-W3 |
元件数量 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | ROUND | RECTANGULAR | ROUND | ROUND |
封装形式 | CYLINDRICAL | FLANGE MOUNT | CYLINDRICAL | CYLINDRICAL |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO |
端子形式 | WIRE | THROUGH-HOLE | WIRE | WIRE |
端子位置 | BOTTOM | SINGLE | BOTTOM | BOTTOM |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
其他特性 | LOW THRESHOLD | - | LOW THRESHOLD | LOW THRESHOLD |
最大反馈电容 (Crss) | 10 pF | - | 10 pF | 10 pF |
JEDEC-95代码 | TO-226AA | - | TO-226AA | TO-237AA |
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