电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MXUPS560E3

产品描述Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 60V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, POWERMITE 3, 2 PIN
产品类别分立半导体    二极管   
文件大小201KB,共3页
制造商Microsemi
官网地址https://www.microsemi.com
标准  
下载文档 详细参数 选型对比 全文预览

MXUPS560E3概述

Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 60V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, POWERMITE 3, 2 PIN

MXUPS560E3规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Microsemi
包装说明ROHS COMPLIANT, PLASTIC, POWERMITE 3, 2 PIN
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
应用EFFICIENCY
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码R-PSSO-G2
JESD-609代码e3
最大非重复峰值正向电流100 A
元件数量1
相数1
端子数量2
最高工作温度125 °C
最低工作温度-55 °C
最大输出电流5 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
认证状态Not Qualified
最大重复峰值反向电压60 V
表面贴装YES
技术SCHOTTKY
端子面层MATTE TIN
端子形式GULL WING
端子位置SINGLE
处于峰值回流温度下的最长时间40

文档预览

下载PDF文档
UPS560e3
5 A Schottky Barrier Rectifier
DESCRIPTION
KEY FEATURES
WWW .
Microsemi
.C
OM
This UPS560e3 in the Powermite3
®
package is a high efficiency Schottky
rectifier that is also RoHS compliant offering high current/power capabilities
previously found only in much larger packages. They are ideal for SMD
applications that operate at high frequencies. In addition to its size
advantages, the Powermite3
®
package includes a full metallic bottom that
eliminates the possibility of solder flux entrapment during assembly and a
unique locking tab act as an efficient heat path to the heat-sink mounting.
Its innovative design makes this device ideal for use with automatic insertion
equipment.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on Rated Load@ T
c
=90 ºC
Storage Temperature
Junction Temperature
Symbol
V
RRM
V
RWM
V
R
V
R (RMS)
I
o
I
FSM
T
STG
T
J
Value
Unit
60
42
5
100
-55 to +150
-55 to +125
V
V
A
A
ºC
ºC
Very low thermal resistance package
RoHS Compliant with e3 suffix part
number
Guard-ring-die construction for transient
protection
Efficient heat path with Integral locking
bottom metal tab
Low forward voltage
Full metallic bottom eliminates flux
entrapment
Compatible with automatic insertion
Low profile-maximum height of 1mm
Options for screening in accordance with
MIL-PRF-19500 for JAN, JANTX, and
JANTXV are available by adding MQ, MX,
or MV prefixes respectively to part
numbers. For example, designate
MXUPS560e3 for a JANTX (consult
factory for Tin-Lead plating).
Optional 100% avionics screening
available by adding MA prefix for 100%
temperature cycle, thermal impedance
and 24 hours HTRB (consult factory for
Tin-Lead plating)
APPLICATIONS/BENEFITS
Switching and Regulating Power
Supplies.
Silicon Schottky (hot carrier) rectifier for
minimal reverse voltage recovery
Elimination of reverse-recovery
oscillations to reduce need for EMI
filtering
Charge Pump Circuits
Reduces reverse recovery loss with low
I
RM
Small foot print
190 X 270 mils (1:1 Actual size)
See mounting pad details on pg 3
MECHANICAL & PACKAGING
THERMAL CHARACTERISTICS
Thermal Resistance
Junction-to-case (bottom)
Junction to ambient (1)
R
θJC
R
θJA
3.2
65
ºC/ Watt
ºC/ Watt
(1) When mounted on FR-4 PC board using 2 oz copper with recommended minimum foot print
Powermite 3™
Note: 1 Short duration test pulse used to minimize self – heating effect.
CASE: Void-free transfer molded
thermosetting epoxy compound meeting
UL94V-0
FINISH: Annealed matte-Tin plating over
copper and readily solderable per MIL-
STD-750 method 2026 (consult factory
for Tin-Lead plating)
POLARITY: See figure (left)
MARKING: S560•
WEIGHT: 0.072 gram (approx.)
Package dimension on last page
Tape & Reel option: 16 mm tape per
Standard EIA-481-B, 5000 on 13” reel
UPS560E3
UPS560E3
Copyright
©
2007
6-26-2007 REV D
Microsemi
Page 1

MXUPS560E3相似产品对比

MXUPS560E3 MQUPS560E3 MVUPS560E3
描述 Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 60V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, POWERMITE 3, 2 PIN Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 60V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, POWERMITE 3, 2 PIN Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 60V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, POWERMITE 3, 2 PIN
是否无铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合
厂商名称 Microsemi Microsemi Microsemi
包装说明 ROHS COMPLIANT, PLASTIC, POWERMITE 3, 2 PIN R-PSSO-G2 ROHS COMPLIANT, PLASTIC, POWERMITE 3, 2 PIN
针数 2 2 2
Reach Compliance Code compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99
应用 EFFICIENCY EFFICIENCY EFFICIENCY
外壳连接 CATHODE CATHODE CATHODE
配置 SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609代码 e3 e3 e3
最大非重复峰值正向电流 100 A 100 A 100 A
元件数量 1 1 1
相数 1 1 1
端子数量 2 2 2
最高工作温度 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C
最大输出电流 5 A 5 A 5 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 260 260 260
认证状态 Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 60 V 60 V 60 V
表面贴装 YES YES YES
技术 SCHOTTKY SCHOTTKY SCHOTTKY
端子面层 MATTE TIN MATTE TIN MATTE TIN
端子形式 GULL WING GULL WING GULL WING
端子位置 SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 40 40 40

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 471  2266  1647  393  748  10  46  34  8  16 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved