NOIS1SM1000S,
NOIS1SM1000A
STAR1000 1M Pixel
Radiation Hard CMOS
Image Sensor
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
1024 x 1024 Active Pixels
15
mm
x 15
mm
Pixel Size
1 inch
−
35 mm Optical Format
High Radiation Tolerance
High Sensitivity
Low Noise
Monochrome and Color
11 Frames per Second (fps) at Full Resolution
On-chip 10-bit Analog-to-Digital Converter (ADC)
Region of Interest (ROI) Readout
Windowed and Subsampled Readout
Rolling Shutter
On-chip Fixed Pattern Noise (FPN) Correction
Ceramic JLCC-84 Package
BK7G18 Glass with N2 Filled Cavity
400 mW Power Dissipation
These Devices are Pb−Free and are RoHS Compliant
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APPLICATIONS
Standard market Applications
•
Nuclear Inspection
Space Applications
Figure 1. STAR1000 in 84−Pin Ceramic
JLCC Package
•
Space Science
•
Star Trackers
•
Sun Sensors
JLDCC84
CASE 114AK
ITAR INFORMATION
DESCRIPTION
•
The STAR1000 is an ITAR−free component
The STAR1000 is a CMOS image sensor with 1024 by 1024 pixels on a 15
mm
x 15
mm
pitch. It features on-chip Fixed
Pattern Noise (FPN) correction, a programmable gain amplifier, and a 10-bit Analog-to-Digital Converter (ADC).
All circuits are designed using the radiation tolerant design techniques to allow high tolerance against Radiation effects.
Registers which contain the X- and Y- addresses of the read out pixels can be directly accessed by the external controller.
This architecture provides for flexible operation and allows different operation modes such as (multiple) windowing,
subsampling, and so on.
The STAR1000 is assembled using a BK7G18 glass lid with a Nitrogen-filled cavity which increases the temperature
operating range. The STAR1000 flight model has additional screening to space qualified standards.
ORDERING INFORMATION
Marketing Part Number
NOIS1SM1000A-HHC
NOIS1SM1000S-HHC
NOIS1SM1000A-HWC
NOIS1SM1000S-HWC
NOIS1SC1000A-HHC
Description
Mono with BK7G18 Glass, Engineering Model
Mono with BK7G18 Glass, Flight Model
Mono windowless, Engineering Model
Mono windowless, Flight Model
Color with BK7G18 Glass, Engineering Model
1
Risk Production
Engineering
Publication Order Number:
NOIS1SM1000A/D
Status
Production
Package
84 pin JLCC
case 114AK
©
Semiconductor Components Industries, LLC, 2014
February, 2014
−
Rev. 13
NOIS1SM1000S, NOIS1SM1000A
ORDERING CODE DECODER
Marking
The marking shall consist of a lead identification and traceability information.
Lead Identification
An index to pin 1 shall be located on the top of the package as shown in section Package Dimensions on page 21. The pin
numbering is counter clock-wise, when looking at the top-side of the component.
Traceability Information Tests
Each component shall be marked such that complete traceability can be maintained.
The component shall bear a number that is constituted as follows:
Orderable Part Number
NOIS1SM1000A-HHC
NOIS1SM1000S-HHC
NOIS1SM1000A-HWC
NOIS1SC1000A-HHC*
Package Mark: Line 1
NOIS1SM1000A
NOIS1SM1000S
NOIS1SM1000A
NOIS1SC1000A
Package Mark: Line 2
-HHC NNNN
-HHC NNNN
-HWC NNNN
-HHC NNNN
Package Mark: Line 3
AWLYYWW
AWLYYWW
AWLYYWW
AWLYYWW
where NNNN- serialized number controlled manually by ON Semiconductor, BELGIUM
where AWLYYWW represents the lot assembly date
*The NOIS1SC1000A−HHC is in engineering sample.
MARKING DIAGRAM
12
11
32
33
1
84
75
74
XXXXX
A
WL
YY
WW
NNNN
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Serial Number
52
53
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2
NOIS1SM1000S, NOIS1SM1000A
INTRODUCTION
Overview
This specification details the ratings, physical,
geometrical electrical and electro-optical characteristics,
test and inspection data for a CMOS Active Pixel image
Sensor (CMOS APS) based on type STAR 1000. The sensor
has a format of 1024 by 1024 pixels on a 15
mm
x 15
mm
pitch, and contains an on-chip 10-bit ADC.
This specification shall be read in conjunction with the
ESCC generic specification ESCC 9020 issue 2 dated March
2010.
Export Clearance
•
Always store the devices in a shielded environment that
protects against ESD damage (at least a non-ESD
generating tray and a metal bag)
•
Always wear a wrist strap when handling the devices
and use ESD safe gloves.
The STAR1000 is classified as class 1A (JEDEC
classification – [AD03]) device for ESD sensitivity.
For proper handling and storage conditions, refer to
ON Semiconductor application note AN52561, Image
Sensor Handling and Best Practices.
Storage information
The STAR1000 is subject to export clearance for some
countries and applications, and an export license might be
required.
Component Type Variants
A summary of the type variants of the basic CMOS image
sensor is shown in the ordering information. The complete
list of detailed specifications for each type option is listed in
the acceptance criteria specification.
All specifications presented in this datasheet are rated at
22
±3°C,
under nominal clocking and bias conditions.
Exceptions are noted in the ‘remarks’ field.
Soldering instructions
The components must be stored in a dust-free and
temperature-, humidity and ESD controlled environment.
•
Devices must always be stored in special ESD-safe
trays such that the glass window is never touched.
•
The trays are closed with EDS-safe rubber bands
•
The trays are sealed in an ESD-safe conductive foil in
clean room conditions.
•
For transport and storage outside a clean room the trays
are packed in a second ESD-save bag that is sealed in
clean room.
Limited Warranty
Soldering is restricted to manual soldering only. No wave
or reflow soldering is allowed. For the manual soldering,
following restrictions are applicable:
•
Solder 1 pin on each of the 4 sides of the sensor
•
Cool down period of min. 1 minute before soldering
another pin on each of the 4 sides
•
Repeat soldering of 1 pin on each side, including a
1 minute cool down period.
Handling precautions
ON Image Sensor Business Unit warrants that the image
sensor products to be delivered hereunder, if properly used
and serviced, will conform to Seller’s published
specifications and will be free from defects in material and
workmanship for two (2) years following the date of
shipment. If a defect were to manifest itself within two (2)
years period from the sale date, ON Semiconductor will
either replace the product or give credit for the product.
Return Material Authorization (RMA)
The component is susceptible to damage by electro-static
discharge. Therefore, suitable precautions shall be
employed for protection during all phases of manufacture,
testing, packaging, shipment and any handling. The
following guidelines are applicable:
•
Always manipulate the devices in an ESD controlled
environment
ON Semiconductor packages all of its image sensor
products in a clean room environment under strict handling
procedures and ships all image sensor products in ESD-safe,
clean-room-approved shipping containers. Products
returned to ON Semiconductor for failure analysis should be
handled under these same conditions and packed in its
original packing materials, or the customer may be liable for
the product.
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3
NOIS1SM1000S, NOIS1SM1000A
APPLICABLE DOCUMENTS
The following documents form part of this specification and shall be read in conjunction with it:
No.
AD01
AD02
AD03
AD04
AD05
Reference
ESCC Generic Specification 9020
CISP spec# 001-06225
JESD22-A114-B
APS-FF-SC-03-010
CISP spec# 001-49283
Title
Charge Coupled Devices, Silicon, Photosensitive
Electro-optical test methods for CMOS image
sensors
Electrostatic Discharge (ESD) Sensitivity Testing
Human Body Model (HBM)
Process Identification Document
Visual Inspection for FM devices
Issue
2.0
E
B
3.0
1
January, 2008
Date
March 2010
October, 2008
June, 2000
NOTE: CISP #
−
CMOS Image Sensor Products, ON Semiconductor
TERMS, DEFINITIONS ABBREVIATIONS, SYMBOLS AND UNITS
For the purpose of this specification, the terms,
definitions, abbreviations, symbols and units specified in
ESCC basic Specification 21300 shall apply.
The following formulas are applicable to convert %Vsat
and mV/s into e- and e-/s:
•
FPN[e
*] +
conversion_gain
FPN[%Vsat]
*
Vsat
Dark_signal[V s]
•
Dark_signal[e
*
s]
+
conversion_gain
•
DSNU[e
*] +
DSNU[%Vsat]
*
Vsat
conversion_gain
•
Conversion gain for STAR1000: 11.5
mV/e-
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4
NOIS1SM1000S, NOIS1SM1000A
TEST PROCEDURE OVERVIEW
Environmental and Endurance Tests
Electrical and electro-optical measurements on completion
of environmental test
The parameters to be measured on completion of
environmental tests are scheduled in Table 21. Unless
otherwise stated, the measurements shall be performed at an
environmental temperature of 22
±3°C.
Measurements of
dark current are performed at 22
±1°C
and the actual
environmental temperature must be reported with the test
results.
Electrical and electro-optical measurements at
intermediate point during endurance test
The parameters to be measured at intermediate points
during endurance test of environmental tests are scheduled
in Table 21. Unless otherwise stated, the measurements shall
be performed at an environmental temperature of 22
±3°C.
Electrical and electro-optical measurements on completion
of endurance test
The parameters to be measured on completion of
endurance tests are scheduled in Table 21. Unless otherwise
Table 1. WAFER LOT ACCEPTANCE (on every fab lot)
Test
Wafer processing
data review
SEM
Total dose test
Endurance test
PID
ESCC 21400
ESCC 22900
MIL-STD-883 Method 1005
Test Method
stated, the measurements shall be performed at an
environmental temperature of 22
±3°C.
Conditions for operating life test
The conditions for operating life tests shall be as specified
in Table 20 of this specification.
Electrical circuits for operating life test
Circuits for performing the operating life test are shown
in Figure 2 of this specification.
Conditions for high temperature storage test
The temperature to be applied shall be the maximum
storage temperature specified in Table 6 of this
specification.
Lot Acceptance and Screening
Lot acceptance and screening are based on the ESA basic
specification ESCC 9020.
This paragraph describes the LAT and screening for the
STAR1000 flight model devices.
Number of Devices
NA
4 devices
3 devices
6 devices
NA
NA
Test Condition
Test Location
ON Semiconductor
Test House
Test House by
ON Semiconductor
Test House
See below
See below
Total dose test conditions performed on unscreened devices:
•
NOIS1SM1000S-HHC 100KRad at 3.6 Krad/hour
max dose rate, and biased
Endurance test conditions performed on unscreened
devices:
•
NOIS1SM1000S-HHC 2000h, biased at +125°C
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