TK11A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK11A50D
Switching Regulator Applications
Ф3.2
±
0.2
10
±
0.3
Unit: mm
2.7
±
0.2
A
3.9 3.0
1.14
±
0.15
2.8 MAX.
2.54
1
2
3
2.6
±
0.1
13
±
0.5
0.69
±
0.15
Ф0.2
M A
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC
Drain current
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
500
±30
11
44
45
264
11
4.5
150
−55
to 150
A
W
mJ
A
mJ
°C
°C
Unit
V
V
2.54
0.64
±
0.15
15.0
±
0.3
•
•
•
•
Low drain-source ON-resistance: R
DS (ON)
= 0.45
Ω
(typ.)
High forward transfer admittance: |Y
fs
| = 5.5 S (typ.)
Low leakage current: I
DSS
= 10
μA
(max) (V
DS
= 500 V)
Enhancement mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Pulse (t
=
1 ms)
(Note 1)
1: Gate
2: Drain
3: Source
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
⎯
SC-67
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
2.78
62.5
Unit
°C/W
°C/W
1
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: V
DD
=
90 V, T
ch
=
25°C(initial), L
=
3.7 mH, R
G
=
25
Ω,
I
AR
=
11 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
3
1
2010-06-03
4.5
±
0.2
TK11A50D
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
t
f
V
DD
≈
200 V
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
400 V, V
GS
=
10 V, I
D
=
11 A
Duty
≤
1%, t
w
=
10
μs
⎯
⎯
⎯
⎯
100
24
16
8
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
⎪Y
fs
⎪
C
iss
C
rss
C
oss
t
r
t
on
10 V
V
GS
0V
50
Ω
I
D
=
5.5 A
V
OUT
V
DS
=
25 V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±30
V, V
DS
=
0 V
V
DS
=
500 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
10 V, I
D
=
5.5 A
V
DS
=
10 V, I
D
=
5.5 A
Min
⎯
⎯
500
2.0
⎯
1.4
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
0.45
5.5
1200
6
120
25
60
12
Max
±1
10
⎯
4.0
0.6
⎯
⎯
⎯
pF
Unit
μA
μA
V
V
Ω
S
⎯
⎯
⎯
⎯
⎯
⎯
⎯
ns
R
L
=
36
Ω
⎯
⎯
⎯
⎯
⎯
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
⎯
⎯
I
DR
=
11 A, V
GS
=
0 V
I
DR
=
11 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/μs
Min
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
1300
12
Max
11
44
−1.7
⎯
⎯
Unit
A
A
V
ns
μC
Marking
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
K11A50D
Part No.
(or abbreviation code)
Lot No.
Note 4
2
2010-06-03
TK11A50D
I
D
– V
DS
10
Common source
Tc
=
25°C
Pulse Test
10
7
8
20
6.7
6.5
16
10
8
I
D
– V
DS
7.5
7.3
8
(A)
(A)
7
Common source
Tc
=
25°C
Pulse Test
6.5
ID
6
6
4
5.5
2
VGS
=
5 V
0
0
ID
Drain current
12
Drain current
8
4
6
VGS
=
5.5 V
2
4
6
8
10
0
0
10
20
30
40
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
I
D
– V
GS
20
Common source
VDS
=
20 V
Pulse Test
10
V
DS
– V
GS
Common source
Tc
=
25°C
Pulse Test
(V)
16
8
ID (A)
VDS
12
6
8
25
4
100
Drain-source voltage
ID
=
11 A
Drain current
4
5.5
2
2.8
Tc
= −55
°C
0
0
2
4
6
8
10
0
0
4
8
12
16
20
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
|Y
fs
| – I
D
(S)
100
Common source
VDS
=
10 V
Pulse Test
10
Common source
Tc
=
25°C
Pulse Test
R
DS (ON)
– I
D
|Y
fs
|
Forward transfer admittance
10
Tc
= −55
°C
25
100
1
Drain-source ON-resistance
RDS(ON) (Ω)
1
VGS
=
10 V
0.1
0.1
1
10
100
0.1
0.1
1
10
100
Drain current ID (A)
Drain current ID (A)
3
2010-06-03
TK11A50D
R
DS (ON)
−
Tc
2
Common source
VGS
=
10 V
Pulse Test
100
Common source
Tc
=
25°C
Pulse Test
I
DR
−
V
DS
Drain-source ON-resistance
R
DS (ON)
(Ω)
1.6
Drain reverse current IDR (A)
10
1.2
11
0.8
5.5
ID
=
2.8 A
0.4
1
10
5
3
0
−80
−40
0
40
80
120
160
0.1
0
1
−0.3
−0.6
VGS
=
0 V
−0.9
−1.2
−1.5
Case temperature Tc (°C)
Drain-source voltage
VDS
(V)
Capacitance – V
DS
10000
5
V
th
−
Tc
Ciss
Vth (V)
(pF)
1000
4
Gate threshold voltage
Capacitance C
3
100
Coss
2
Common source
1 VDS
=
10 V
ID
=
1mA
Pulse Test
0
−80
−40
0
40
80
120
160
10
Common source
VGS
=
0 V
f =1MHz
Tc
=
25°C
1
10
Crss
1
0.1
100
Drain-source voltage
VDS
(V)
Case temperature Tc (°C)
P
D
−
Tc
80
500
Dynamic input / output
characteristics
20
Drain power dissipation PD (W)
(V)
400
VDS
60
200
300
VDD
=
100 V
400
200
VGS
100
16
Drain-source voltage
40
8
Common source
ID
=
11 A
Tc
=
25°C
4
Pulse Test
20
0
0
40
80
120
160
0
0
8
16
24
32
40
0
Case temperature Tc (°C)
Total gate charge Qg (nC)
4
2010-06-03
Gate-source voltage
12
VGS (V)
VDS
TK11A50D
r
th
– t
w
Normalized transient thermal impedance
r
th (t)
/R
th (ch-c)
10
1
Duty=0.5
0.2
0.1
0.1
0.05
0.02
SINGLE PULSE
PDM
t
0.01
0.01
T
Duty
=
t/T
Rth (ch-c)
=
2.78 °C/W
0.001
10μ
100μ
1m
10m
100m
1
10
Pulse width
t
w
(s)
SAFE OPERATING AREA
100
ID max (pulse)
*
300
E
AS
– T
ch
E
AS
(mJ)
Avalanche energy
10
ID max (continuous)
240
100
μs
*
1 ms
*
180
Drain current I
D
(A)
1
DC operation
Tc
=
25°C
120
0.1
60
0
25
0.01
*
Single pulse Tc=25°C
Curves must be derated
linearly with increase in
temperature.
10
50
75
100
125
150
Channel temperature (initial)
VDSS max
100
1000
T
ch
(°C)
0.001
1
Drain-source voltage
V
DS
(V)
15 V
−15
V
B
VDSS
I
AR
V
DD
V
DS
Waveform
Ε
AS
=
⎛
⎞
1
B VDSS
⎟
⋅
L
⋅
I2
⋅ ⎜
⎜
B
2
−
VDD
⎟
⎝
VDSS
⎠
Test circuit
RG
=
25
Ω
V
DD
=
90 V, L
=
3.7 mH
5
2010-06-03
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