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SSM2375CBZ-REEL7

产品描述Filterless High Efficiency Mono 3 W Class-D Audio Amplifier
产品类别模拟混合信号IC    消费电路   
文件大小430KB,共17页
制造商ADI(亚德诺半导体)
官网地址https://www.analog.com
标准
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SSM2375CBZ-REEL7概述

Filterless High Efficiency Mono 3 W Class-D Audio Amplifier

SSM2375CBZ-REEL7规格参数

参数名称属性值
Brand NameAnalog Devices Inc
是否无铅含铅
是否Rohs认证符合
厂商名称ADI(亚德诺半导体)
零件包装代码BGA
包装说明VFBGA, BGA9,3X3,20
针数9
制造商包装代码CB-9-2
Reach Compliance Codecompliant
ECCN代码EAR99
商用集成电路类型AUDIO AMPLIFIER
JESD-30 代码S-PBGA-B9
JESD-609代码e3
长度1.46 mm
湿度敏感等级1
信道数量1
功能数量1
端子数量9
最高工作温度85 °C
最低工作温度-40 °C
标称输出功率3 W
封装主体材料PLASTIC/EPOXY
封装代码VFBGA
封装等效代码BGA9,3X3,20
封装形状SQUARE
封装形式GRID ARRAY
峰值回流温度(摄氏度)260
电源5 V
认证状态Not Qualified
座面最大高度0.655 mm
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)2.5 V
表面贴装YES
温度等级INDUSTRIAL
端子面层Matte Tin (Sn)
端子形式BALL
端子节距0.5 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
宽度1.46 mm

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Data Sheet
FEATURES
Filterless Class-D amplifier with spread-spectrum
Σ-Δ modulation
3 W into 3 Ω load and 1.4 W into 8 Ω load at 5.0 V supply
with <1% total harmonic distortion (THD + N)
93% efficiency at 5.0 V, 1.4 W into 8 Ω speaker
>100 dB signal-to-noise ratio (SNR)
High PSSR at 217 Hz: 80 dB
Flexible gain adjustment pin: 0 dB to 12 dB in 3 dB steps
Fixed input impedance: 80 kΩ
User-selectable ultralow EMI emissions mode
Single-supply operation from 2.5 V to 5.5 V
20 nA shutdown current
Short-circuit and thermal protection with autorecovery
Available in 9-ball, 1.5 mm × 1.5 mm WLCSP
Pop-and-click suppression
Filterless, High Efficiency,
Mono 3 W Class-D Audio Amplifier
SSM2375
Spread-spectrum pulse density modulation (PDM) is used to
provide lower EMI-radiated emissions compared with other
Class-D architectures. The inherent randomized nature of
spread-spectrum PDM eliminates the clock intermodulation
(beating effect) of several amplifiers in close proximity.
The SSM2375 includes an optional modulation select pin
(ultralow EMI emissions mode) that significantly reduces the
radiated emissions at the Class-D outputs, particularly above
100 MHz. In ultralow EMI emissions mode, the SSM2375
can pass FCC Class B radiated emission testing with 50 cm,
unshielded speaker cable without any external filtering.
The device also includes a highly flexible gain select pin that
allows the user to select a gain of 0 dB, 3 dB, 6 dB, 9 dB, or
12 dB. The gain selection feature improves gain matching
between multiple SSM2375 devices within a single application
as compared to using external resistors to set the gain.
The SSM2375 has a micropower shutdown mode with a typical
shutdown current of 20 nA. Shutdown is enabled by applying
a logic low to the SD pin.
The device also includes pop-and-click suppression circuitry.
This suppression circuitry minimizes voltage glitches at the
output during turn-on and turn-off, reducing audible noise
on activation and deactivation.
Other features that simplify system-level integration of the
SSM2375 include input low-pass filtering to suppress out-of-band
DAC noise interference to the PDM modulator and fixed-input
impedance to simplify component selection across multiple
platform production builds.
The SSM2375 is specified over the industrial temperature range
of −40°C to +85°C. It has built-in thermal shutdown and output
short-circuit protection. It is available in a halide-free, 9-ball,
1.5 mm × 1.5 mm wafer level chip scale package (WLCSP).
APPLICATIONS
Mobile phones
MP3 players
Portable electronics
GENERAL DESCRIPTION
The
SSM2375
is a fully integrated, high efficiency, Class-D audio
amplifier. It is designed to maximize performance for mobile
phone applications. The application circuit requires a minimum
of external components and operates from a single 2.5 V to 5.5 V
supply. It is capable of delivering 3 W of continuous output power
with <1% THD + N driving a 3 Ω load from a 5.0 V supply.
The SSM2375 features a high efficiency, low noise modulation
scheme that requires no external LC output filters. The modulation
continues to provide high efficiency even at low output power.
The SSM2375 operates with 93% efficiency at 1.4 W into 8 Ω
or with 85% efficiency at 3 W into 3 Ω from a 5.0 V supply and
has an SNR of >100 dB.
10µF
0.1µF
FUNCTIONAL BLOCK DIAGRAM
POWER SUPPLY
2.5V TO 5.5V
VDD
OUT+
IN+
22nF
SHUTDOWN
IN–
GAIN
CONTROL
MODULATOR
(Σ-Δ)
FET
DRIVER
OUT–
SSM2375
22nF
IN+
IN–
BIAS
SD
GAIN
R
GAIN
INTERNAL
OSCILLATOR
EDGE
CONTROL
EDGE
GND
EMISSION
CONTROL
GAIN SELECT
GAIN = 0dB, 3dB, 6dB, 9dB, OR 12dB
Figure 1.
Rev. A
Document Feedback
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2010–2013 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
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