TSM8N80
800V N-Channel Power MOSFET
TO-220
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
800
1.4 @ V
GS
=10V
I
D
(A)
8
General Description
The TSM8N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half
bridge.
Features
●
●
●
Low R
DS(ON)
1.4Ω (Max.)
Low gate charge typical @ 41nC (Typ.)
Improve dv/dt capability
Block Diagram
Ordering Information
Part No.
TSM8N80CZ C0
TSM8N80CZ C0G
Package
TO-220
TO-220
Packing
50pcs / Tube
50pcs / Tube
N-Channel MOSFET
TSM8N80CI C0G
ITO-220
50pcs / Tube
Note:
“G” denote for Halogen Free Product
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current *
Peak Diode Recovery dv/dt (Note 4)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Repetitive) (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
Tc = 25 C
Derate above 25℃
o
Symbol
V
DS
V
GS
Tc = 25 C
Tc = 100 C
o
o
TO-220
800
±30
8
4.9
32
4.5
171
8
25
250
2
150
ITO-220
Unit
V
V
I
D
I
DM
dv/dt
E
AS
I
AR
E
AR
P
D
T
J
T
STG
8*
4.9 *
32 *
A
A
V
mJ
A
mJ
40.3
0.32
-55 to +150
W
ºC/W
ºC
o
Operating Junction Temperature
Storage Temperature Range
* Limited by maximum junction temperature
C
1/10
Version: C13
TSM8N80
800V N-Channel Power MOSFET
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t
≤
10sec
Symbol
RӨ
JC
RӨ
JA
TO-220
0.5
62.5
ITO-220
3.1
Unit
o
C/W
Electrical Specifications
(Tc = 25
o
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Diode Forward Voltage
Dynamic
b
Conditions
V
GS
= 0V, I
D
= 250uA
V
GS
= 10V, I
D
= 4.0A
V
DS
= V
GS
, I
D
= 250uA
V
DS
= 800V, V
GS
= 0V
V
GS
= ±30V, V
DS
= 0V
V
DS
= 30V, I
D
= 4.0A
I
S
= 8A, V
GS
= 0V
Symbol
BV
DSS
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
g
fs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
Min
800
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
1.1
--
--
--
7
--
41
10
11
1921
146
12
133
30
172
37
479
Max
--
1.4
4.0
10
±100
--
1.5
--
--
--
--
--
--
--
--
--
--
--
--
Unit
V
Ω
V
uA
nA
S
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
V
DS
= 640V, I
D
= 8A,
V
GS
= 10V
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
nC
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
V
GS
= 0V, I
S
= 8A,
V
GS
= 10V, I
D
= 8A,
V
DD
= 400V, R
G
= 25Ω
t
r
t
d(off)
t
f
t
fr
nS
nS
uC
dI
F
/dt = 100A/us
Reverse Recovery Charge
Q
fr
--
5.5
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. Max Rating E
AS
Test Condition: V
DD
= 50V, I
AS
=8A, L=5mH, R
G
=25Ω, Starting T
J
=25℃
3. Guaranteed 100% E
AS
Test Condition: V
DD
= 50V, I
AS
=8A, L=1mH, R
G
=25Ω, Starting T
J
=25℃
4. I
SD
≤8A,
di/dt
≤
200A/uS, Vdd
≤
BV, Starting T
J
=25℃
5. Pulse test: pulse width
≤300uS,
duty cycle
≤2%
6. b For design reference only, not subject to production testing.
7. c Switching time is essentially independent of operating temperature.
2/10
Version: C13
TSM8N80
800V N-Channel Power MOSFET
Electrical Characteristics Curve
(Tc = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/10
Version: C13
TSM8N80
800V N-Channel Power MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Drain Current vs. Case Temperature
BV
DSS
vs. Junction Temperature
Maximum Safe Operating Area
Capacitance vs. Drain-Source Voltage
Maximum Safe Operating Area (ITO-220)
4/10
Version: C13
TSM8N80
800V N-Channel Power MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Ambient (ITO-220)
5/10
Version: C13
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
