TSM19N20
200V N-Channel Power MOSFET
TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V
DS
(V)
200
R
DS(on)
(mΩ)
92 @ V
GS
=10V
I
D
(A)
18
Features
●
●
●
●
Advanced Trench Technology
Low R
DS(ON)
92mΩ (Max.)
Low gate charge typical @ 55nC (Typ.)
Low Crss typical @ 73pF (Typ.)
Block Diagram
Ordering Information
Part No.
TSM19N20CP ROG
Package
TO-252
Packing
2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
N-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25°C
Drain Current Pulsed (Note 1)
Avalanche Current
Avalanche Energy, L=10mH
Maximum Power Dissipation @ T
C
=25°
C
Storage Temperature Range
Operating Junction Temperature Range
* Limited by maximum junction temperature
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
STG
T
J
Limit
200
±20
18
72
8
320
48
-55 to +150
-55 to +150
Unit
V
V
A
A
A
mJ
W
°
C
°
C
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t
≤
10sec
Symbol
RӨ
JC
RӨ
JA
Limit
2.6
50
Unit
o
o
C/W
C/W
1/4
Version: A12
TSM19N20
200V N-Channel Power MOSFET
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode Characteristics and Maximum Rating
Drain-Source Diode Forward
Voltage
Reverse Recovery Time
V
GS
=0V, I
S
=10A
I
S
= 10A, T
J
=25 C
o
Conditions
V
GS
= 0V, I
D
= 250uA
V
GS
= 10V, I
D
= 10A
V
DS
= V
GS
, I
D
= 250uA
V
DS
= 160V, V
GS
= 0V
V
GS
= ±30V, V
DS
= 0V
Symbol
BV
DSS
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
Min
200
--
2
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
80
--
--
--
55
18
17
2300
145
73
17
12
28
10
Max
--
92
4
1
±100
--
--
--
--
--
--
--
--
--
--
Unit
V
mΩ
V
uA
nA
V
DS
= 100V, I
D
= 10A,
V
GS
= 10V
V
DS
= 30V, V
GS
= 0V,
f = 1.0MHz
nC
pF
V
GS
= 10V, V
DS
= 100V,
R
G
= 3Ω
t
r
t
d(off)
t
f
nS
V
SD
t
fr
--
--
--
82
1.3
--
V
nS
dI/dt = 100A/us
Reverse Recovery Charge
Q
fr
--
276
--
nC
Notes:
1. Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
2. Rθ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins. Rθ
JC
is guaranteed by design while Rθ
CA
is determined by the user's board design. Rθ
JA
shown below for single device operation on FR-4 in still air
2/4
Version: A12
TSM19N20
200V N-Channel Power MOSFET
TO-252 Mechanical Drawing
Unit: Millimeters
3/4
Version: A12
TSM19N20
200V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
4/4
Version: A12
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